s - ck5t
Abstract: CA52
Text: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification
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KMM5321200BW/B
KMM5321200BW/BWG
1Mx32
1Mx16
KMM5321200BW
42-pin
72-pin
s - ck5t
CA52
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THM401020
Abstract: No abstract text available
Text: 1,048,576 W O R D Sx 4 0 BIT D YN A M IC RAM MODULE DESCRIPTION The THM401020SG is a 1,048,576 words by 40 bits dynamic RAM module which assembled .10 pcs of TC514400J on the printed circuit board. The THM401020SG is optimized for application to the systems which are required high density and
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THM401020SG
TC514400J
775mW
THMxxxxxx-80)
950mW
THMxxxxxx-10)
B-100
THM401020SG-80,
B-101
THM401020
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Untitled
Abstract: No abstract text available
Text: i4inba03 HB56D25632 Series- IHITS T44 T-4& -Z3-17 262,144-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION DOIIDIR ■ PIN OUT The HB56D25632B is a 256k x 32 dynamic RAM module, mounted 8 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package. An outline of the HB56D25632B is 72-pin sin
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i4inba03
HB56D25632
-Z3-17
144-Word
32-Bit
HB56D25632B
HM514256JP)
72-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M SC23132C/CL-XXBS8/PS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI M SC23132C/CL-xxBS8/DS8 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in SOJ packages
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MSC23132C/CL-XXBS8/PS8
576-Word
32-Bit
MSC23132C/CL-xxBS8/DS8
72-pin
MSC23132C/CL-xxBS8
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N I m "“ 1 MT12D436 4 MEG X 36, 8 MEG X 18 DRAM MODULE 4 MEG X 36, 8 MEG 18 X FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply
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MT12D436
72-pin
048-cycle
T12D436M
A0-A10;
A0-A10
MT120436
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MT16D832-6/7
Abstract: No abstract text available
Text: ADVANCE M IC R O N 8 MEG X DRAM MODULE MT16D832 32, 16 MEG x 16 DRAM MODULE 8 MEG x 32,16 MEG x16 FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • All device pins are fully 1 ÌL compatible
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MT16D832
72-pin
240mW
048-cycle
72-pRITE
MT16D632
A0-A10;
MT16D832-6/7
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MT18D236G6
Abstract: No abstract text available
Text: l^ iic n o N 2 MEG X MT18D236 36 DRAM MODULE 2 MEG X 36 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process. • Single 5V ±10% power supply • All device pins are fully TTL compatible
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MT18D236
72-pin
052mW
024-cycle
18D236M
MT180236
MT18D236G6
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hb56d436br
Abstract: HB56D436BR-6
Text: HB56D436BR/SBR-6B/7B/8B Preliminary 4,194,304-Word x 35-Sit High Density Dynamic RAM Module HITACHI The HB56D436 is a 4 M x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100CS) sealed in
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HB56D436BR/SBR-6B/7B/8B
304-Word
35-Sit
HB56D436
16-Mbit
HM5117400BS)
HM514100CS)
72-pin
hb56d436br
HB56D436BR-6
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M MTt8LD T 47Z(X}(SJI 4 MEG xTZDETAWI M O D ULE IC R O N • u n w a- g rr n l 4 MEG x 72 DRAM MODULE 32 MEGABYTE, ECC, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE MATURES ’ JED EC - and industry-standard E C C pinout in a 168-pin, dual-in-line memory module (D IM M )
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168-pin,
048-cycle
128ms
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T2D 94
Abstract: MT2D25632M6
Text: M I CR ON S E M I C O N D U C T O R INC b^E ]> • M IC R O N I b l l l S 4 ci G O O ' n S ? lb? WM URN MT2D25632 256K X 32 DRAM MODULE DRAM MODULE 256K x 32 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-performance CMOS silicon-gate process
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MT2D25632
72-pin
750mW
512-cycle
MT2D25632M/G
T2025632
2S632
T2D 94
MT2D25632M6
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Untitled
Abstract: No abstract text available
Text: Preliminary KM4132G271 CMOS SGRAM 128K x 32 x 2Bit Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply The KM4132G271 is 8,388,608 bits synchronous high data • LVTTL com patible with multiplexed address rate Dynamic RAM organized as 2 x 131,072 words by 32
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KM4132G271
100pin
20x14
2113c
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Untitled
Abstract: No abstract text available
Text: M IC R O N • T 512K DRAM MODULE 36, 1 MEG X X MT20D51236 18 DRAM M ODULE 512K x 36,1 MEG x 18 FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process. • Single 5V ±10% power supply
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MT20D51236
72-pin
512-cycle
MT200S1236
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Untitled
Abstract: No abstract text available
Text: Preliminary DRAM MODULE KMM5321200BW/BWG KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 5321200BW is a 1M bit x 32 - KMM5321200BW 1024 cycles/16ms Ref, SOJ, Solder
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KMM5321200BW/BWG
KMM5321200BW/BWG
1Mx32
1Mx16
5321200BW
KMM5321200BW
cycles/16ms
KMM5321200BW
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KM416C256AJ
Abstract: KMM532256AW MM5322
Text: KMM532256AW/WG Fast Page Mode 256KX32 DRAM SIMM Using 256Kx16 DRAM, 5V G E N E R A L D E S C R IP T IO N FEATURES The Samsung K M M 532256AW is a 256K bit x 32 • Performance Range: Dynamic RAM high density memory module. The Samsung K M M 532256A W consists of two C M OS
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KMM532256AW/WG
256KX32
256Kx16
532256AW
32256A
40-pin
72-pin
KMM532256AW
KM416C256AJ
MM5322
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Katalog tesla tranzistor
Abstract: OC26 Tesla katalog GS507 156NU70 TESLA 102NU71 GF-50 OC30 Tesla 2NU74
Text: È o n s ìr n k É iii h i a l o j f germanìovych tranzistoru T E S L 4 R O Z N O V K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek
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TT346B
AF139)
TT346E
IT346B
Katalog tesla tranzistor
OC26
Tesla katalog
GS507
156NU70
TESLA
102NU71
GF-50
OC30 Tesla
2NU74
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Untitled
Abstract: No abstract text available
Text: SA M S UN G E L E C T R O N I C S INC b?E D • T ' i b m M S 0 G 1 5 1 ?b 2 bQ ■ SNGK KMM5362000B2/B2G DRAM MODULES 2Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000B2 is a 1M b itsx3 6 Dynamic RAM high density memory module. The Samsung
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KMM5362000B2/B2G
2Mx36
KMM5362000B2
20-pin
18-pin
72-pin
KMM5362000B2-6
110ns
KMM5362000B2-7
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC64K32/36E1 64K X 32/36 SYNCBURST SRAM MICRON • TECHNOLOGY. WC. 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • •
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MT58LC64K32/36E1
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T2D 17 69
Abstract: No abstract text available
Text: PRELIMINARY MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I^ IIC R O N 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES (DD-11) (DD-9) (DD-10) (DD-12) • T im in g 60n s access 70ns access • C o m p o n en ts
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72-pin,
024-cy
T2D 17 69
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Flash SIMM 72 29F040
Abstract: No abstract text available
Text: 2x512Kx32 5V FLASH S IM M p r e l im in a r y * FEATURES • Access Time of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as tw o banks of 512Kx32 • 80-pin S I M M ■ Commercial Temperature Range • The module is manufactured w ith eight 512Kx8 C M O S
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2x512Kx32
80-pin
512Kx32
29F040
512Kx8
Flash SIMM 72 29F040
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GS507
Abstract: Katalog tesla tranzistor Tesla katalog OC169 TRANZISTOR CATALOG GS506 156NU70 GS508 OC170 OC30 Tesla
Text: in t in t ili it t ilif germaniovvch tranzistorû T E IIA ROZNOV K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek
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R02N0V
TT346B
AF139)
GS507
Katalog tesla tranzistor
Tesla katalog
OC169
TRANZISTOR CATALOG
GS506
156NU70
GS508
OC170
OC30 Tesla
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j2449
Abstract: No abstract text available
Text: N EW PRODUCT HB56G136CC Series 1,048,576-Word X 36-Bit High Density Dynamic RAM Card 0H IT A C H I Rev.O Ju l. 03, 1992 Description The HB56G136CC is a 1M X 36 dynamic R A M Card, mounted 8 pieces of 4Mbit D RAM HM514900LTT sealed in T SO P package. An outline of the HB56G13GCC is 88-pin two piece connector package.
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HB56G136CC
576-Word
36-Bit
HM514900LTT)
HB56G13GCC
88-pin
j2449
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Untitled
Abstract: No abstract text available
Text: MICR ON S E M I C O N D U C T O R INC m i c r o b l l l S M T G D Q 6 1 3 H 152 M U R N b3E T> n 1 MEG 1 MEG DRAM MODULE X MT9D136 36 DRAM MODULE X 36 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Common RAS control pinout in a 72-pin single-in-line
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MT9D136
72-pin
175mW
024-cycle
MT9D136M/G
SIMM4-240
CYCLE20
MT90136
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC128K32/36F1 128K X 32/36 SYNCBURST SRAM l ^ i c n o N SYNCHRONOUS SRAM 128K x 32/36 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • OPTIONS 100-Pin TQFP
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MT58LC128K32/36F1
MT50LCl28K32/3eF1
Y46pm
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM3210BQAS/ASG -70/80 1,048,576 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3210B0A is a 1,048,576 word by 32 bit dynamic RAM module which is assembled with two TC5118160AJ devices on the printed circuit board. This module can be as well used as 2,097,152 word by 16
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THM3210BQAS/ASG
THM3210B0A
TC5118160AJ
540mW
DQ0-31)
THM3210B0AS/ASG
THM3210B0AS/ASG
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