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ORGAN Result Highlights (5)

Part	Manufacturer	Description
SGAS707	Renesas Electronics Corporation	Industrial Organic Chemical Sensor
SMOD707KITV1	Renesas Electronics Corporation	Volatile Organic Compound (VOC) Sensor Evaluation Kit
OB1203SD-RL-EVK	Renesas Electronics Corporation	Heart Rate, SpO2 and Respiration Rate Evaluation Kit with RL78 16-bit Processor and OLED Display
LM3509SDX/NOPB	Texas Instruments	High Efficiency Boost for White LED's and/or OLED Displays with Dual Current Sinks 10-WSON -40 to 85
LM3509SD/NOPB	Texas Instruments	High Efficiency Boost for White LED's and/or OLED Displays with Dual Current Sinks 10-WSON -40 to 85

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StarTech CABLE-ORGANIZER-LOCK Peripheral Cable Anchor Lock, Secure Keyboard/Mouse, Cable Trap w/Metal Plate \| StarTech.com CABLE-ORGANIZER-LOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	CABLE-ORGANIZER-LOCK	Bulk		5 Weeks	1	1 $8.99 10 $8.79 100 $8.59 1000 $8.59 10000 $8.59	Get Quote
NAC	CABLE-ORGANIZER-LOCK		94		1	1 $10.6 10 $10.6 100 $10.6 1000 $10.6 10000 $10.6	Buy Now
KEMET Corporation T521D107M025ATE040 Tantalum Capacitors - Polymer 25V 100uF 2917 20% ESR=40mOhms
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	T521D107M025ATE040	Reel	739,000		500	1 - 10 - 100 - 1000 $2.51 10000 $2.25	Buy Now
KEMET Corporation T520D337M006ATE025 Tantalum Capacitors - Polymer 6.3V 330uF 2917 20% ESR=25mOhms
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TTI	T520D337M006ATE025	Reel	577,000		500	1 - 10 - 100 - 1000 $0.617 10000 $0.522	Buy Now
KEMET Corporation T520A106M010ATE080 Tantalum Capacitors - Polymer 10V 10uF 1206 20% ESR=80mOhms
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TTI	T520A106M010ATE080	Reel	178,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.228	Buy Now
KEMET Corporation T520B476M006ATE070 Tantalum Capacitors - Polymer 6.3V 47uF 1311 20% ESR=7mOhms
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	T520B476M006ATE070	Reel	150,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.288	Buy Now

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ORGAN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IR 30 D1 Abstract: No abstract text available Text: SN74ALS236 64 x 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY SDAS107A-OCTOBER 1986 - REVISED SEPTEMBER 1993 Asynchronous Operation Organized as 64 Words by 4 Bits DW OR N PACKAGE TOP VIEW r NC [ 1 Data Rates From 0 to 30 MHz 3-State Outputs 16 J VCC 15 ] S O	OCR Scan	SN74ALS236 SDAS107A-OCTOBER 300-mll 256-bit IR 30 D1	PDF
tr8c Abstract: TMS28F200 Text: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture	OCR Scan	TMS28F20 TMS28F200BZB 8-BIT/131072 16-BIT 96K-Byte 128K-Byte 16K-Byte 28F200B2x70 28F200BZX80 28F200BZX90 tr8c TMS28F200	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst	OCR Scan	TC55V2325FF-100 TC55V2325FF 64KX32 LQFP100-P-1420-0	PDF
Untitled Abstract: No abstract text available Text: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s	OCR Scan	TMS28C64 536-BIT	PDF
Untitled Abstract: No abstract text available Text: TC55417P/J —15H. TC55417P/J-20H TC55417P/J—25H. TC55417P/J-35H • * 16,384 W O R D x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55417P/J—H is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5 - volt supply.	OCR Scan	TC55417P/J --15H. TC55417P/J-20H TC55417P/J--25H. TC55417P/J-35H TC55417P/J-- 120mA 100mA TC55417P/J--H	PDF
TMS4116 Abstract: TMS4132 Text: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible	OCR Scan	768-BIT 18-PIN 200ACCESS 4132JD TMS4116 TMS4132	PDF
ic tl 741 Abstract: S47C256 Text: AD V A N C E INFORM ATION TM S47C256 32,768-W ORD BY 8-BIT R EAD -O N LY M EM O R Y NOVEM BER 1 9 8 5 3 2 ,7 6 8 X 8 Organization N PACKAGE TOP VIEW Fully Static (No Clocks. No Refresh) NC C 1 y j 2 Q : 27 : A12 C 2 A7 C 3 26 : All Inputs and Outputs TTL Compatible	OCR Scan	S47C256 256-1S ic tl 741	PDF
A9RV Abstract: 5s a315 A327 Text: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit	OCR Scan	TC514900AJLL-70/80 TC514900AJLL TC514900AJLI/70/80 TC514900AJLL70/80 A9RV 5s a315 A327	PDF
74ALS234 Abstract: No abstract text available Text: SN54ALS234, SN74ALS234 64 x 4 ASYNCHRONOUS FIRST-IN FIRST OUT MEMORY 0 2 9 5 8 , OCTOBER 1 9 8 6 Asynchronous Operation S N 54A LS 234 . . . J PACKAGE S N 74A LS 234 . . . 0 OR N PACKAGE Organized as 6 4 Words of 4 Bits Management Products TOP VIEW! Data Rates from 0 to 30 MHz	OCR Scan	SN54ALS234, SN74ALS234 I67401B 256-bit 192-WORD 12-BIT 74ALS234	PDF
tms4256 Abstract: TMS4266 Text: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)	OCR Scan	U17ES 077GC TM4256EL9, TM4256GU9 -ifc-23-/7 TM4266EL9 30-Pln TM4256EL9) TM4266GU9) tms4256 TMS4266	PDF
NCC equivalent Abstract: No abstract text available Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors	OCR Scan	TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent	PDF
th50vsf1400 Abstract: BA30 Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory	OCR Scan	50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30	PDF
A1051 Abstract: No abstract text available Text: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs	OCR Scan	TMS27C291, TMS27C292 384-BIT TMS27PC291 27C/PC291-3 27C/PC291 27C/PC291-5 27C/PC291-35 27C/PC291-45 A1051	PDF
27C020-12 Abstract: 27PC020-12 LS020 A1025 LS020B 2097152-BIT Text: TMS27C020 2097152-BIT UV ERASABLE PROGRAMMABLE TMS27PC020 2097152-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS020B - N O V E M B E R 1990 - REVISED JU N E 1995 • Organization . . . 256K x 8 J PACKAGE TOP VIEW • Single 5-V Power Supply • Operationally Compatible With Existing	OCR Scan	TMS27C020 2097152-BIT TMS27PC020 LS020B 32-Pln 32-Lead 27C/PC020-12 27C/PC020-15 27C/PC020-20 27C020-12 27PC020-12 LS020 A1025	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.	OCR Scan	TC58V64FT/DC 64-MBIT TC58V64FT/DC 016-bit) 528-byte 44/40-P-400-0	PDF
4A04I Abstract: tc514100a Text: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as	OCR Scan	TC51441OAP/AJ/ASJ/AZ-- TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 TC51441 TC514410AP/AJ/ASJ/AZ 350mil) TC514100AP/AJ/ASJ/AZ. TC5141OOAP/AJ/ASJ/AZ-60 4A04I tc514100a	PDF
Untitled Abstract: No abstract text available Text: • ■ ! ■ ■ ■ ■ • '\|<f TOSHIBA MIOS MEMORY PRODUCTS 8,192 WORD X 8 BIT CM OS STATIC RAM SILICON GATE C M O S T C 5 5 63 A P L-1 0, T C 5563A P L-12 T C 55 6 3 A P L -1 5 DESCRIPTIO N The TC5563APL is 65,536 bit static random access memory organized as 8,1 92 words by 8 bits	OCR Scan	TC5563APL TMM2764D) 6D28A-P)	PDF
BE423 Abstract: No abstract text available Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro	OCR Scan	TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423	PDF
TC514170BJ-80 Abstract: tc514170 TC514170BJ80 Text: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques	OCR Scan	TC514170BJ-70/80 TC514170BJ TC514170BJ-80 tc514170 TC514170BJ80	PDF
Untitled Abstract: No abstract text available Text: TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 1983 - REVISED NOVEMBER 1985 SINGLE-IN-UNE PACKAGE 6 5 ,5 3 6 X 4 Organization TOP VIEW Single 5-V Supply (10% Tolerance) 22-Pin Single-in-Line Package (SIP) Utilizes Four 64K Dynamic RAMs in Plastic	OCR Scan	TM4164EC4 22-Pin	PDF
TC5117445CSJ Abstract: No abstract text available Text: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The	OCR Scan	TC5117445CSJ-40 304-WORD TC5117445CSJ 28-pin 17445CSJ-40 TC5117445CSJ SOJ28	PDF
TC5316200bP Abstract: TC5316200BP/BF Text: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.	OCR Scan	TC5316200BP/BF TC5316200BP/BF 600mil 42-pin 44-pin TC5316200BP TC5316200BF	PDF
44c256 Abstract: 3034C Text: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS034C - MAY 1989 - B E V ILO JUNE 1965 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output	OCR Scan	SMJ44C256 SGMS034C MIL-STD-833, SMJ44C256-80 SMJ44C256-10 SMJ44C256-12 SMJ44C256-15 20-Pin 300-Mil 20-Lead 44c256 3034C	PDF
TC51V18160 Abstract: No abstract text available Text: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC51V18160 C S / CFTS - 60 TOSHIBA TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V1S160CJS-CFTS is the fast page dynamic R A M organized 1,048,576 words by 16 bits.	OCR Scan	TC51V18160 TC51V1S160CJS-CFTS TC51V18160CJS TC51V18160CJS/CFTS 73MAX TSOP50-P-400) 875TYP 35MAX TC51V18160CJS/CFT>	PDF

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ORGAN Search Results

ORGAN Result Highlights (5)

ORGAN Price and Stock

StarTech CABLE-ORGANIZER-LOCK

KEMET Corporation T521D107M025ATE040

KEMET Corporation T520D337M006ATE025

KEMET Corporation T520A106M010ATE080

KEMET Corporation T520B476M006ATE070

ORGAN Datasheets Context Search

IR 30 D1

tr8c

Untitled

Untitled

Untitled

TMS4116

ic tl 741

A9RV

74ALS234

tms4256

NCC equivalent

th50vsf1400

A1051

27C020-12

Untitled

4A04I

Untitled

BE423

TC514170BJ-80

Untitled

TC5117445CSJ

TC5316200bP

44c256

TC51V18160