DC100V
Abstract: DC250V diac data sheet DIAC EQUIVALENT circuit diac marking IC speaker protect SPD102 TV 20-30 SPD-102L SPD-141M
Text: SURGE PROTECT DIODES SPD -SERIES I.PART NUMBER SPD-301 N 1 (2) (3) (1)Series name (2)DC Sparkover voltage The first two digits are significant and the third is the number of zeros. Units in volts(v). (3)Tolerance of DC Sparkover voltage Mark L M N Tolerance ±10%
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SPD---301
DO-35
DO-41S
Page82
SPD-141L
SPD-141M
SPD-141N
SPD-201L
SPD-201M
SPD-201N
DC100V
DC250V
diac data sheet
DIAC EQUIVALENT circuit
diac marking
IC speaker protect
SPD102
TV 20-30
SPD-102L
SPD-141M
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infrared transmitter and receiver
Abstract: MCF51EM electrical based microcontroller projects mcf51je256 S08 Freescale AN4116 MC9S08MM128 MCF51EM256 MCF51MM256 instrumentation projects
Text: Freescale Semiconductor Application Note Document Number: AN4116 Rev. 0, 07/2010 Using MM/JE Flexis Families for Infrared Communication by: Carlos Casillas RTAC Americas Guadalajara, Mexico 1 Introduction This application note explains the hardware that facilitates the infrared communication implementation
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AN4116
MCF51EM256,
AN3938,
MCF51EM
infrared transmitter and receiver
electrical based microcontroller projects
mcf51je256
S08 Freescale
AN4116
MC9S08MM128
MCF51EM256
MCF51MM256
instrumentation projects
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FS1J3
Abstract: origin diode Schottky Diode 30V 1A SOD123 toshiba battery charger Power DIODES, toshiba Nihon EP10QY03 d1651 B130LAW toshiba smd diode toshiba diode 1A
Text: New Product Announcement August 2002 Compact, High-efficiency SOD-123: B130LAW! Uses 35-40% Less Board Space Than Other 1 Amp SMD’s E D SOD-123 A B G H C J Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D 1.35 E 0.55 Typical G 0.25 H 0.15 Typical
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OD-123:
B130LAW!
OD-123
OD-123
380mV
B130LAW
EP10QY03;
470mV
420mV
CRS01;
FS1J3
origin diode
Schottky Diode 30V 1A SOD123
toshiba battery charger
Power DIODES, toshiba
Nihon EP10QY03
d1651
toshiba smd diode
toshiba diode 1A
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ABVZ
Abstract: 1N1742 1N1742A 20C6
Text: MIL-S-19500/298 21 Ocmbor 1964 ● MILITARY SEMICONDUCTOR SPECIFICATION DEVfCE, TYPE 1. USAF DIODE, SILICON 1N1742A SCOPE 1.1 Oescri Ion. This specification covers voltxe-re + erence &ode, and is in accordance ehalf not be used for new design. 1.2 Madmum
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MIL-S-19500/298
1N1742A
MLL-5-19500
P12EPARATJON
MIL-S-195W.
K2L-S-195W
ABVZ
1N1742
1N1742A
20C6
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"Power Semiconductor Applications" Philips
Abstract: No abstract text available
Text: Philips Semiconductors Power Diodes Back diffused rectifier diodes A single-diffused P-N diode with a two layer structure cannot combine a high forward current density with a high reverse blocking voltage. A way out of this dilemma is provided by the three layer
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Ratings and Characteristics Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Ratings and Characteristics process to minimise forward voltage losses, and being majority carrier devices have no stored charge. They are therefore capable of operating at extremely high speeds.
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YA878C15
Abstract: No abstract text available
Text: http://www.fujisemi.com YA878C15R 150V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C15 YA878C15
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YA878C15R
O-220AB
YA878C15
YA878C15
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diode 100v 10a
Abstract: No abstract text available
Text: http://www.fujisemi.com YG872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F Applications
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YG872C10R
O-220F
diode 100v 10a
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YA872C15R 150V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C15 YA872C15
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YA872C15R
O-220AB
YA872C15
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YA872C10R
Abstract: diode 100v 10a
Text: http://www.fujisemi.com YA872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C10 YA872C10
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YA872C10R
O-220AB
YA872C10
YA872C10R
diode 100v 10a
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Catalog diode
Abstract: YG875C10
Text: http://www.fujisemi.com YG875C10R 100V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C10 YG875C10
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YG875C10R
O-220F
YG875C10
Catalog diode
YG875C10
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YG878C10
Abstract: No abstract text available
Text: http://www.fujisemi.com YG878C10R 100V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG878C10 YG878C10
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YG878C10R
O-220F
YG878C10
YG878C10
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YA878C12R 120V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C12 YA878C12
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YA878C12R
O-220AB
YA878C12
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YA872C12R 120V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C12 YA872C12
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YA872C12R
O-220AB
YA872C12
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ORIGIN ELECTRIC CATALOG
Abstract: YA878C20R Catalog diode diode Catalog diode 200v 30a PUT catalog 200v 30A schottky fuji electric mark
Text: http://www.fujisemi.com YA878C20R 200V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C20 YA878C20
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YA878C20R
O-220AB
YA878C20
ORIGIN ELECTRIC CATALOG
YA878C20R
Catalog diode
diode Catalog
diode 200v 30a
PUT catalog
200v 30A schottky
fuji electric mark
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YG875C15R
Abstract: No abstract text available
Text: http://www.fujisemi.com YG875C15R 150V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C15 YG875C15
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YG875C15R
O-220F
YG875C15
YG875C15R
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YA875C15R 150V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA875C15 YA875C15
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YA875C15R
O-220AB
YA875C15
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YG878C12R 120V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG878C12 YG878C12
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YG878C12R
O-220F
YG878C12
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Catalog diode
Abstract: No abstract text available
Text: http://www.fujisemi.com YA875C20R 200V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA875C20 YA875C20
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YA875C20R
O-220AB
YA875C20
Catalog diode
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YG875C20R
Abstract: YG875C20
Text: http://www.fujisemi.com YG875C20R 200V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C20 YG875C20
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YG875C20R
O-220F
YG875C20
YG875C20R
YG875C20
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fuji
Abstract: No abstract text available
Text: http://www.fujisemi.com YA878C10R 100V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C10 YA878C10
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YA878C10R
O-220AB
YA878C10
fuji
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fuji diode
Abstract: YG878C20 YG878C20R FUJI ELECTRIC DIODE Catalog diode 200V30A origin semiconductor diode catalog fuji
Text: http://www.fujisemi.com YG878C20R 200V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG878C20 YG878C20
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YG878C20R
O-220F
YG878C20
fuji diode
YG878C20
YG878C20R
FUJI ELECTRIC DIODE
Catalog diode
200V30A
origin semiconductor diode
catalog fuji
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military part marking symbols jan
Abstract: jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M
Text: MIL SPECS iclooooias 0002300 L> f MIL-S-19500/2021 AMOEDMOrr 2 14 December 1964 supebsedS g D C K »T 1 3 December 1963 MILITARY SPECIFICATl« SEMICONDUCTOR DEVICES, DIODES, SILICCB, POWER BECTLFTEBS, TYPES JAN-1 N538, JAN-1#540 AMD JAI-1*547 This amendment forms a part of Military Specification MIL-S-19500/2C2A,
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DDQQ125
MEL-S-19500/2D21
JAN-1N538,
JAN-1N540
JA1-U547
MIL-S-19500/202A,
MIL-S-19500
MEL-STD-750.
MIL-S-19491
MIL-S-19500.
military part marking symbols jan
jan1n538
1n538
JAN1N540
1N538 JAN
JAN-1N540M
1N538M
in547
JAN-1N538
JAN-1N547M
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1N830A
Abstract: mil-s-19500
Text: M I L - S - 19500/229 NAVY AMENDMENT 1 25 April 1966 MILITARY SPECIFICATION SEMI CONDUCTOR DEVICE, DIODE, TYPE 1N830AM This amendment forms a part of Military Specification'MIL-S-19500/229(NAVY), 29 June 1962. Page 1, Title: Delete and substitute: "SEMICONDUCTOR DEVICE, DIODE, TYPE 1N830A".
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MIL-S-19500/229
1N830AM
1N830A"
MIL-S-19500,
1N830AM"
1N830A
mil-s-19500
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