ORIGIN SEMICONDUCTOR RECTIFIER Search Results

ORIGIN SEMICONDUCTOR RECTIFIER Result Highlights (5)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

ORIGIN SEMICONDUCTOR RECTIFIER Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HEXFET Power MOSFET designer manual Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different	Original		PDF
HEXFET Power MOSFET designer manual Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt Text: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different	Original		PDF
B250C2300 Abstract: B250C1500a B40C2300-1500A B250C-1500A Text: B.C2300-1500A/B B.C2300-1500A/B Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2006-07-12 19 3.5 x 0.25 x 1.2 8.7 = = x x 0.8 5 5 5 Dimensions - Maße [mm] 1 10 Type Typ Nominal current Nennstrom 2.3 / 1.5 A Alternating input voltage	Original	C2300-1500A/B UL94V-0 B250C1500A" B250C1500A B250C1500A B250C23001500A b40c2300 21-May-2010 B250C2300 B40C2300-1500A B250C-1500A	PDF
"Power Semiconductor Applications" Philips Abstract: No abstract text available Text: Philips Semiconductors Power Diodes Back diffused rectifier diodes A single-diffused P-N diode with a two layer structure cannot combine a high forward current density with a high reverse blocking voltage. A way out of this dilemma is provided by the three layer	Original		PDF
AN-1084 Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841 Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5	Original	AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841	PDF
sumida 94V-0 Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.	Original	IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET	PDF
SHINDENGEN* tr 452 Abstract: TDK C3216JB1E225K CDRH104R-5R2 C1608JB1H100K DS04-27234-1E r27-200 C1608JB1H104K RB053L-30 td126 uPA2752 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27234-1E ASSP For Power Supply Applications Secondary Battery DC/DC Converter IC for Charging Li-ion Battery with Synchronous Rectifier MB39A107 • DESCRIPTION The MB39A107 is a DC/DC converter IC suitable for down-conversion, using pulse-width modulation (PWM)	Original	DS04-27234-1E MB39A107 MB39A107 F0312 SHINDENGEN* tr 452 TDK C3216JB1E225K CDRH104R-5R2 C1608JB1H100K DS04-27234-1E r27-200 C1608JB1H104K RB053L-30 td126 uPA2752	PDF
CPH3106 Abstract: CPH3206 F02J9 MB3881 NDS355AN SLF6028T-150M1R0 SLF6028T-330MR69 VT100 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27224-1E ASSP For Power Management Applications 8-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3881 • DESCRIPTION The MB3881 a step-up/step-down type of 8-channel, DC/DC converter IC. It uses pulse width modulation PWM	Original	DS04-27224-1E MB3881 MB3881 CPH3106 CPH3206 F02J9 NDS355AN SLF6028T-150M1R0 SLF6028T-330MR69 VT100	PDF
Tdk Vcm Abstract: transformer pst 39 F02J9 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27224-2E ASSP For Power Management Applications 8-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3881 • DESCRIPTION The MB3881 a step-up/step-down type of 8-channel, DC/DC converter IC. It uses pulse width modulation PWM	Original	DS04-27224-2E MB3881 MB3881 Tdk Vcm transformer pst 39 F02J9	PDF
SLF6028T-150M1R0 Abstract: F02J9 CPH3106 CPH3206 MB3881 NDS355AN SLF6028T-330MR69 VT100 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27224-2E ASSP For Power Management Applications 8-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3881 • DESCRIPTION The MB3881 a step-up/step-down type of 8-channel, DC/DC converter IC. It uses pulse width modulation PWM	Original	DS04-27224-2E MB3881 MB3881 F0209 SLF6028T-150M1R0 F02J9 CPH3106 CPH3206 NDS355AN SLF6028T-330MR69 VT100	PDF
1117 ADC Abstract: 558 QUAD TIMER pmp 7.24 DSP56F807 220v DC MOTOR SPEED CONTROLLER brushless motors cd rom Datasheet 4449 LV 1084 PMP 6.24 mobile phone controlled street light monitoring and control system Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Embedded SDK Software Development Kit Targeting Motorola DSP56F80x Platform SDK126/D Rev. 4, 03/21/2003 Motorola, Inc., 2003. All rights reserved. For More Information On This Product, Go to: www.freescale.com	Original	DSP56F80x SDK126/D 1117 ADC 558 QUAD TIMER pmp 7.24 DSP56F807 220v DC MOTOR SPEED CONTROLLER brushless motors cd rom Datasheet 4449 LV 1084 PMP 6.24 mobile phone controlled street light monitoring and control system	PDF
Untitled Abstract: No abstract text available Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27224-2Ea ASSP For Power Management Applications 8-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3881 • DESCRIPTION The MB3881 a step-up/step-down type of 8-channel, DC/DC converter IC. It uses pulse width modulation PWM	Original	DS04-27224-2Ea MB3881 MB3881	PDF
MB3881PFF Abstract: CPH3106 CPH3206 F02J9 MB3881 NDS355AN SLF6028T-150M1R0 SLF6028T-330MR69 VT100 Capacitor 0.22 uF Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27224-2Ea ASSP For Power Management Applications 8-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3881 • DESCRIPTION The MB3881 a step-up/step-down type of 8-channel, DC/DC converter IC. It uses pulse width modulation PWM	Original	DS04-27224-2Ea MB3881 MB3881 MB3881PFF CPH3106 CPH3206 F02J9 NDS355AN SLF6028T-150M1R0 SLF6028T-330MR69 VT100 Capacitor 0.22 uF	PDF
FEBFSFR2100_D015V1 Abstract: bobbin EER3542 EER3542 core FEBFSFR2100 H11AB17 FSFR2100 LLC resonant transformer samwha 220uF 35V 340VDC fsfr2100-nd Text: User Guide for FEBFSFR2100_D015v1 Evaluation Board LCD TV Power Supply Featured Fairchild Product: FSFR2100 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2011 Fairchild Semiconductor Corporation	Original	FEBFSFR2100 D015v1 FSFR2100 D015v1 FEBFSFR2100_D015V1 bobbin EER3542 EER3542 core H11AB17 FSFR2100 LLC resonant transformer samwha 220uF 35V 340VDC fsfr2100-nd	PDF

Untitled Abstract: No abstract text available Text: User Guide for FEBFL7730_L20L008A 8.4W LED Bulb Using FL7730 Featured Fairchild Product: FL7730 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2012 Fairchild Semiconductor Corporation	Original	FEBFL7730 L20L008A FL7730	PDF
Samwha Electrolytic capacitor 47uf 400v Abstract: No abstract text available Text: User Guide for FEBFL7730_L20H008A 8.4W LED Bulb Using FL7730 Featured Fairchild Product: FL7730 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2012 Fairchild Semiconductor Corporation	Original	FEBFL7730 L20H008A FL7730 Samwha Electrolytic capacitor 47uf 400v	PDF
3DU41 Abstract: D0-201AD c05w origin semiconductor rectifier Text: TOSHIBA 3DU41 TOSHIBA DUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 3DU41 SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = 2 00 V AV = 3-0a trr= 100ns (MAX.)	OCR Scan	3DU41 100ns D0-201AD 3DU41 D0-201AD c05w origin semiconductor rectifier	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 3DU41 TOSHIBA DUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 3DU41 SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V rrm = 200V AV = 3-o a trr= 100ns (MAX.)	OCR Scan	3DU41 100ns	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A 3DZ41,3LZ41 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 3DZ41, 3LZ41 U nit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS • A verage Forward Current : Ip AV = 3-0A • Repetitive Peak Reverse Voltage : V rrjv [ = 200, 800V • Peak One Cycle Surge Forward Current (Non Repetitive)	OCR Scan	3DZ41 3LZ41 3DZ41, 3DZ41 30X30m	PDF
IN1733A Abstract: 1N1733A IN1733 1N173A 1N1731A IN1731A 1N1734A I960 MIL-STD-750 METHOD 2036 conditions E ML-733 Text: MIL-S-19500/K2A 13 May 196/« SUPERSEDING MIL-S-19500/142 SigC 20 September I960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, SILICON, HIGH VOLTAGE RECTIFIER TYPES 1N1731A, 1N1733A, AND 1N173AA Tliis specification has been approved by the Department of Defense and is man	OCR Scan	MIL-S-19500/K2A MIL-S-19500/I42 IN1731A, 1N1733A, 1N173AA 1/120-sec; 1N1731A 1N1733A 1N173U MIL-S-19500. IN1733A IN1733 1N173A IN1731A 1N1734A I960 MIL-STD-750 METHOD 2036 conditions E ML-733	PDF
military part marking symbols jan Abstract: jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M Text: MIL SPECS iclooooias 0002300 L> f MIL-S-19500/2021 AMOEDMOrr 2 14 December 1964 supebsedS g D C K »T 1 3 December 1963 MILITARY SPECIFICATl« SEMICONDUCTOR DEVICES, DIODES, SILICCB, POWER BECTLFTEBS, TYPES JAN-1 N538, JAN-1#540 AMD JAI-1*547 This amendment forms a part of Military Specification MIL-S-19500/2C2A,	OCR Scan	DDQQ125 MEL-S-19500/2D21 JAN-1N538, JAN-1N540 JA1-U547 MIL-S-19500/202A, MIL-S-19500 MEL-STD-750. MIL-S-19491 MIL-S-19500. military part marking symbols jan jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M	PDF
1N3190 Abstract: 1N3189 1N3191 1N3189 JAN 1N3190 JAN 1N3190 JANTX 1N3191 JAN 155E MIL-S-19500 1N3189 Text: MIL SPECS \| 00DQ15S DODlOTb b I MIL-S-19500/155E NAVY NOTICE 1 25 September 1986 I NOTICE I \|OF VALIDATION! MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENEERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES MIL-S-19500/155E(NAVY), dated 2 July 1974, has been reviewed & determined to be valid	OCR Scan	00DD15S MIL-S-19500/155E 1N3189, 1N3190, 1N3191, 000D1HS 1QE17 MIL-S-19500/155D 1N3190 1N3189 1N3191 1N3189 JAN 1N3190 JAN 1N3190 JANTX 1N3191 JAN 155E MIL-S-19500 1N3189	PDF
diode IN457 Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier Text: MIL SPECS IC\|0Q0D1SS 0 Q QS 2M Q B \| / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September	OCR Scan	MIL-S-19500/193C 1N457, 1N458, 1N459 MIL-S-19500 5961-A371) diode IN457 JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier	PDF
1N3190 Abstract: 1N3189 1N3191 1N3189 JAN IN3191 MARKING 34 MIL-S-19500 1N3189 44S3 diode VSF 200 Text: u n -c.i0tnn/tctcikuvv\ i-i* â - - * j - a j j u u / i ^ 2 July 197 m_ SUPERSEDING M I L - S - 1 9 5 0 0 / 1 5 5 D NAVY 23 November 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES	OCR Scan	MIL-S-19500/155E MIL-S-19500/155D 1N3189, 1N3190, 1N3191, MIL-S-19500, MIL-S-19500. MIL-S-19500 59M-N591) 1N3190 1N3189 1N3191 1N3189 JAN IN3191 MARKING 34 MIL-S-19500 1N3189 44S3 diode VSF 200	PDF

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ORIGIN SEMICONDUCTOR RECTIFIER Search Results

ORIGIN SEMICONDUCTOR RECTIFIER Result Highlights (5)

ORIGIN SEMICONDUCTOR RECTIFIER Datasheets Context Search

HEXFET Power MOSFET designer manual

HEXFET Power MOSFET designer manual

B250C2300

"Power Semiconductor Applications" Philips

AN-1084

sumida 94V-0

SHINDENGEN* tr 452

CPH3106

Tdk Vcm

SLF6028T-150M1R0

1117 ADC

Untitled

MB3881PFF

FEBFSFR2100_D015V1

Untitled

Samwha Electrolytic capacitor 47uf 400v

3DU41

Untitled

Untitled

IN1733A

military part marking symbols jan

1N3190

diode IN457

1N3190