IC 7805
Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Text: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)
|
OCR Scan
|
1N4001
1N4007
0V-1000V)
1N5391
1N5399
1N5400
1N5408
S6A05
IC 7805
7812 voltage regulator 5A
REGULATOR IC 7805
REGULATOR IC 7824
1n1001
6a smd transistor
REGULATOR IC 7905
7824 5A
REGULATOR IC 7812
7812 7912
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCTV65P100F1, MCTA65P100F1 H A R R IS X Semiconductor * # $ * » * * * * April 1999 65 A, 1000V P-Type MOS Controlled Thyristor MCT cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,-1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE)
|
OCR Scan
|
MCTV65P100F1,
MCTA65P100F1
O-247
-1000V
000A/|
MO-093AA
O-218)
|
PDF
|
RHRP1580
Abstract: rp1580
Text: CH H A R R IS RHRP1570, RHRP1580, RHRP1590, RHRP15100 15A, 700V - 1000V Hyperfast Diodes Aprii 1995 Package Features • Hyperfast with Soft Recovery . <60ns • Operating Tem p eratu re. +175°C • Reverse Voltage Up T o . ,1000V JEDEC TO-220AC
|
OCR Scan
|
RHRP1570,
RHRP1580,
RHRP1590,
RHRP15100
O-220AC
RHRP1590
TA49062)
RHRP1580
rp1580
|
PDF
|
2CL25
Abstract: 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75
Text: Diodes Fast Switching Rectifiers LL4148 Vrm=100V;Ifsm=500mA 1N4148B/P T/R (T/B) Vr=100V;Ifm=0.5A MinIMELF(SOD 80) DO 41 General Purpose Rectifiers LL4001 4007 NEW Vrm=50 1000V; Ifsm=1.0A MELF 1N4001 4007(B/P)(T/R)(T/B) Vr=50 1000V; Ifm=1.0A DO 41 1A7 Vr=1200V; Ifm=1.0A
|
Original
|
LL4148
500mA
1N4148B/P
LL4001
1N4001
EM516
1N5391
1N5399
1N5400
1000Ifm
2CL25
2CL77
2CL91
2CL24
2CL70
1A7 Zener
SMD LL4001
BA151
HVP320
2CL75
|
PDF
|
MOS Controlled Thyristor
Abstract: TA49226
Text: HX A R R IS MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 lo<*6'N April 1999 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT p *0 Description Features 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an
|
OCR Scan
|
MCT3A65P100F2,
MCT3D65P100F2
-1000V
000A/|
MOS Controlled Thyristor
TA49226
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2 1 3 4 2 1 Anti-Paralle l APT2x100DQ100J 3 4 2 3 1 4 SO P aralle l APT2x101DQ100J 2 T- 27 "UL Recognized" file # E145592 IS OT OP APT2x101DQ100J 1000V 100A APT2x100DQ100J 1000V 100A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS
|
Original
|
APT2x100DQ100J
APT2x101DQ100J
E145592
APT2x101DQ100J
APT2x100DQ100J
OT-227
OT-227
|
PDF
|
APT2X101DQ60J
Abstract: No abstract text available
Text: 2 3 2 3 2 1 4 1 Anti-Paralle l APT2X100D100J 4 3 1 7 2 TO -2 4 P aralle l APT2X101D100J S "UL Recognized" IS OT OP file # E145592 APT2X101D100J APT2X100D100J 1000V 1000V 95A 95A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS
|
Original
|
APT2X100D100J
APT2X101D100J
E145592
APT2X101D100J
OT-227
OT-227
APT2x100DQ60J
APT2x101DQ60J
APT2X101DQ60J
|
PDF
|
APT2X101DQ60J
Abstract: No abstract text available
Text: 2 3 1 4 2 1 Anti-Paralle l APT2X100D100J 3 4 2 3 1 7 2 TO -2 4 P aralle l APT2X101D100J S "UL Recognized" IS OT OP file # E145592 APT2X101D100J APT2X100D100J 1000V 1000V 95A 95A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS
|
Original
|
APT2X100D100J
APT2X101D100J
E145592
OT-227
APT2x100DQ60J
APT2x101DQ60J
APT2X101DQ60J
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2 1 3 4 2 1 Anti-Paralle l APT2x100DQ100J 3 4 2 3 1 4 SO P aralle l APT2x101DQ100J 2 T- 27 "UL Recognized" file # E145592 IS OT OP APT2x101DQ100J 1000V 100A APT2x100DQ100J 1000V 100A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS
|
Original
|
APT2x100DQ100J
APT2x101DQ100J
E145592
APT2x101DQ100J
APT2x100DQ100J
OT-227
|
PDF
|
apt1004ran
Abstract: 1004RAN 1004R2AN 10ILU 1004R2 APT904R2AN APT1004R2AN APT904RAN APT 1004RAN
Text: ADVANCFD P Oü l F R TECHNOLOGY od MT E X o \ D WÊ O O OO S DM K 35D M AVP A d va n c ed P o w er - p 3°i \3 Technology O S P n W P R m a c ix/TM r U W c n M O S IV APT1004RAN APT904RAN APT1004R2AN APT904R2AN 1000V 900V 1000V 900V 3.9A 3.9A 3.5A 3.5A 4.00 £2
|
OCR Scan
|
APT1004RAN
APT904RAN
APT1004R2AN
APT904R2AN
904RAN
1004RAN
904R2AN
1004R2AN
T0-204AA)
1004R2AN
10ILU
1004R2
APT 1004RAN
|
PDF
|
443h
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY . . « o „ , tm POWER MOS IV blE D • QSSTTOS 443 H A V P ADVANCED P o w er Te c h n o l o g y APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 1000V 900V 1000V 900V 9.5A 1.10Q 9.5A 1.1 OQ 9.0A 1.30Q 9.0A 1.30D N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
OCR Scan
|
APT1001R1HN
APT901R1HN
APT1001R3HN
APT901R3HN
901R1HN
1001R1HN
901R3HN
1001R3HN
LinearPT1001R1/1001R3HN
RGURE11,
443h
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS APT1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.
|
OCR Scan
|
APT1001R1BN
APT1001R3BN
1001RBN
1001R3BN
150VOLTAGE
APT1001R1/1001R3BN
O-247AD
|
PDF
|
"MOS Controlled Thyristors"
Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
Text: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE
|
Original
|
MCTV65P100F1,
MCTA65P100F1
O-247
-1000V
150oC
MO-093AA
O-218)
"MOS Controlled Thyristors"
MCT thyristor
MOS Controlled Thyristor
M65P100F1
MCTV65P100F1
MOS-Controlled Thyristor
1000V MCT
MCTA65P100F1
2000A MOS
MCTV65P1
|
PDF
|
MCT harris
Abstract: M65P100F2 TA49226 scr 2032 MCT3A65P100F2 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v
Text: MCT3A65P100F2 MCT3D65P100F2 S E M I C O N D U C T O R 65A, 1000V, P-Type MOS-Controlled Thyristor MCT January 1998 Features Description • 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an
|
Original
|
MCT3A65P100F2
MCT3D65P100F2
150nts
1-800-4-HARRIS
MCT harris
M65P100F2
TA49226
scr 2032
MCT thyristor
MCT3D65P100F2
MOS-Controlled Thyristor
MCT thyristor 1000v
|
PDF
|
|
|
"mos controlled thyristor"
Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
Text: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability
|
Original
|
MCTV65P100F1,
MCTA65P100F1
O-247
-1000V
150oC
MO-093AA
O-218)
"mos controlled thyristor"
MOS Controlled Thyristor
MCTA65P100F1
1000V MCT
M65P100F1
MCTV65P100F1
MCT thyristor
MCT thyristor 1000v
|
PDF
|
APT1002RBNR
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y O D O S APT1002RBNR APT1002R4BNR 1000V 7.0A 2.00< > 1000V 6.5A 2.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.
|
OCR Scan
|
APT1002RBNR
APT1002R4BNR
APT1002RBNR
APT1002R4BNR
STD-750
O-247AD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
|
OCR Scan
|
APT1001R1BN
APT901R1BN
APT1001R3BN
APT901R3BN
901R1BN
1001R1BN
901R3BN
1001R3BN
APT1001R1/901R1/1001R3/901R3BN
O-247AD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 APT1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.
|
OCR Scan
|
APT1001RBNR
APT1001R1BNR
APT1001RBNR
APT1001R1BNR
APT1001R/1001R1BNR
O-247AD
0001S7T
|
PDF
|
1004R2BN
Abstract: APT904RBN Apt904r2bn 1004rbn
Text: O A d va n ced P o w er Te c h n o l o g y D APT1004RBN APT904RBN APT1004R2BN APT904R2BN O S POWER MOS IV 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.2012 4.4A 4.4A 4.0A 4.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings. Tc = 25°C unless otherwise specified.
|
OCR Scan
|
APT1004RBN
APT904RBN
APT1004R2BN
APT904R2BN
1004RBN
904R2BN
1004R2BN
904RBN
/904R/1004R2/904R2BN
10OmS
|
PDF
|
210 RBN
Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR
Text: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q APT1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg
|
OCR Scan
|
APT1001RBNR
APT1001R1BNR
O-247AD
210 RBN
1001r1bn
1001RBN
NA 1001
OA 10 diode
APT1001
1001R1BNR
|
PDF
|
APT1001R1AN
Abstract: APT1001R3AN
Text: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
OCR Scan
|
APT1001R1AN
APT901R1
APT1001R3AN
APT901R3AN
901R1AN
1001R1
901R3AN
1001R3AN
O-204AA)
|
PDF
|
BYP100
Abstract: No abstract text available
Text: SIEMENS B Y P 100 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM *FRMS B Y P 100 1000V 8A *rr 55ns Package Ordering Code TO -218AD C67047-A2254-A2 Maximum Ratings Parameter Symbol Values Tc = 90 °C, D = 0.5
|
OCR Scan
|
-218AD
C67047-A2254-A2
BYP100
|
PDF
|
APT902R4BN
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y ' O D O S POWER MOS IV' AFT1002RBN 1000V 7.0A 2.00Q APT902RBN 900V 7.0A 2.00Q APT1002R4BN 1000V 6.5A 2.40Q APT902R4BN 900V 6.5A 2.40Q N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
|
OCR Scan
|
AFT1002RBN
APT902RBN
APT1002R4BN
APT902R4BN
902RBN
1002RBN
902R4BN
1002R4BN
G21bc
APT1002R/902R/1002R4/902R4BN
APT902R4BN
|
PDF
|
APT1001RBNR
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 APT1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.
|
OCR Scan
|
APT1001RBNR
APT1001R1BNR
APT1001R/1001R1BNR
O-247AD
|
PDF
|
