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    P CHANNEL D- MOSFET Search Results

    P CHANNEL D- MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL D- MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    list of P channel power mosfet

    Abstract: si4563 SI4563DY
    Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested


    Original     		PDF Si4563DY Si4563DY-T1--E3 52243--Rev. 24-Oct-05 list of P channel power mosfet si4563

    Si4565DY

    Abstract: No abstract text available
    Text: Si4565DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P Channel P-Channel –40 40 rDS(on) (W) ID (A) 0.040 at VGS = 10 V 5.2 0.045 at VGS = 4.5 V 4.9 0.054 at VGS = –10 V –4.5 D TrenchFETr Power MOSFET


    Original     		PDF Si4565DY S-60383--Rev. 13-Mar-06

    si3529

    Abstract: Si3529DV SI3529DV-T1-E3
    Text: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V


    Original     		PDF Si3529DV Si3529DV-T1--E3 51448--Rev. 01-Aug-05 si3529 SI3529DV-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		PDF SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    p channel de mosfet

    Abstract: list of P channel power mosfet Si4567DY si4567
    Text: Si4567DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.060 @ VGS = 10 V 5.0 0.070 @ VGS = 4.5 V 4.7 0.085 @ VGS = –10 V –4.4 0.122 @ VGS = –4.5 V –3.7


    Original     		PDF Si4567DY Si4567DY-T1--E3 08-Apr-05 p channel de mosfet list of P channel power mosfet si4567

    APM9934K

    Abstract: apm9934 27BSC STD-020C apm*9934k
    Text: APM9934K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • D N-Channel D D D 20V/9A, RDS(ON) =15mΩ (typ.) @ VGS = 4.5V S1 G1 S2 RDS(ON) =22mΩ (typ.) @ VGS = 2.5V • G2 P-Channel Top View of SOP − 8 -20V/-6A, RDS(ON) =35mΩ (typ.) @ VGS =-4.5V


    Original     		PDF APM9934K -20V/-6A, APM9934K apm9934 27BSC STD-020C apm*9934k

    Si4569DY

    Abstract: No abstract text available
    Text: Si4569DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 0.029 at VGS = –10 V –6.0 0.039 at VGS = –4.5 V


    Original     		PDF Si4569DY Si4569DY-T1--E3 08-Apr-05

    S-49534

    Abstract: Si4539DY
    Text: Si4539DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel N Channel 30 P Channel P-Channel –30 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 D1 D1


    Original     		PDF Si4539DY S-49534--Rev. 06-Oct-97 S-49534

    6x marking sot-23 p-channel

    Abstract: IRLMS4502 IRLMS6702
    Text: PD- 93759A IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 2 5 3 4 A D VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier


    Original     		PDF 3759A IRLMS4502 OT-23. boaS4502 6x marking sot-23 p-channel IRLMS4502 IRLMS6702

    irlms4502

    Abstract: No abstract text available
    Text: PD- 93759 IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier


    Original     		PDF IRLMS4502 OT-23. irlms4502

    40575

    Abstract: SI3993DV SI3993DV-T1
    Text: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.133 @ VGS = −10 V −2.2 0.245 @ VGS = −4.5 V −1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices


    Original     		PDF Si3993DV Si3993DV-T1 Si3993DV-T1--E3 08-Apr-05 40575

    Si6544BDQ

    Abstract: S-31251-Rev
    Text: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V


    Original     		PDF Si6544BDQ Si6544BDQ-T1 08-Apr-05 S-31251-Rev

    Si4564DY

    Abstract: si4564
    Text: SPICE Device Model Si4564DY Vishay Siliconix N-Channel and P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


    Original     		PDF Si4564DY 18-Jul-08 si4564

    Untitled

    Abstract: No abstract text available
    Text: V IS H A Y - S i4 5 0 0 D Y New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V d s (V) N-Channel 20 P-Channel Id (A) r D S (o n )


    OCR Scan     		PDF S-00269-- 26-Apr-99 4500DY

    gfr DIODE

    Abstract: No abstract text available
    Text: T E M IC SÌ9934DY Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V ) 12 r DS(on) (£2) I d (A ) 0.05 @ VGS = -4.5 V 0.074 @ VGs = -2.5 V ±5 ±4.1 SO-8 Gi Top View Di Di D'2 D 2 P-Channel MOSFET P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 9934DY 150QC S-49532--Rev. 02-Feb-98 gfr DIODE

    Untitled

    Abstract: No abstract text available
    Text: SÌ6544DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Rd s <o n ] (&) I d (A) 0.035 @ VGS= 10 v ±4.0 V D* (V) N-Channel 30 0.050 @ VGS = 4.5 V ±3.4 0.045 @ VGS = -1 0 V ±3.5 0.090 @ V gs = -4 .5 V ±2.5 a t -30 P-Channel Dl Q S2 P TSSOP-8 Di Si


    OCR Scan     		PDF 6544DQ 6544D S-56944-- 23-Nov-98 Si6544PQ S-56944--Rev.

    7130-1 transistor

    Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
    Text: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200


    OCR Scan     		PDF SM035X_ S-02367--Rev. 23-Oct-OO 7130-1 transistor TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X

    SI9948DY

    Abstract: No abstract text available
    Text: IT S ilico n ix SÌ9948DY A M ember o f the T emic G roup Dual P-Channel Enhancement-Mode MOSFET Product Summary V DS r D S on -6 0 Id (Q) (A) 0.25 @ V GS = - 1 0 V t2.3 0.50 @ V o s = - 4 .5 V 11.6 (V) Si p SO-8 n Top View n Di Di D P-Channel MOSFET D P-Channel MOSFET


    OCR Scan     		PDF 9948DY 150oC) SI9948DY

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ6955DQ S e m i c o n d u c t o r s Dual P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) r DS(on) ( ß ) -30 I d (A) 0.085 @ VGS= -1 0 V ±2.5 0.19 @ VGS = -4 .5 V ±1.8 S2 o Si o TSSOP-8 g 2 Top View P-Channel M OSFET P-Channel M OSFET


    OCR Scan     		PDF 6955DQ S-49534--Rev. 06-Oct-97

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si9803DY Semiconductors P-Channel Reduced Qg, Fast Switching MOSFET Product Summary VDS V -25 r DS(on) ( ^ ) I d (A) 0.040 @ VGs = -4.5 V ±5.9 0.060 @ VGs = -3.0 V ±4.8 SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF Si9803DY S-53240â ll-Feb-98

    IRF7319

    Abstract: 49AA
    Text: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch


    OCR Scan     		PDF IRF7319 IRF7319 49AA

    Untitled

    Abstract: No abstract text available
    Text: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF Si9407AEY S-57253â 24-Feb-98 S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: _ Si4500DY VISHAY Vishay Siliconix New Product Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V D S (V ) N-Channel 20 P-Channel -2 0 r D S (o n ) ( ) Id (A ) 0.030 @ VGS = 4.5 V ± 7 .0 0.040 @ VGS = 2.5 V ± 6 .0


    OCR Scan     		PDF Si4500DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: 7? tv u J 6 olZ'&Q. . —/ _ SÌ99S8DY Dual Enhancement-Mode MOSFET N- and P- Channel Product Summary V d s (V) N-Channel 20 P-Channel -20 I d (A) ±3.5 ±3 ±2.5 ±3.5 ±3 ±2.5 rDS(on) (&) 0.10 @ VGS = 10 v 0.12 @ VGs = 6 V


    OCR Scan     		PDF 99S8DY Si4532DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96 9958DY