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    P CHANNEL IGBT Search Results

    P CHANNEL IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR2125 APPLICATION NOTE

    Abstract: IR2125 IR2125S transistor tip 33B
    Text: Data Sheet No. PD60017-P IR2125 S CURRENT LIMITING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • Fully operational to +500V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60017-P IR2125 16-Lead MS-001AB) MS-013AA) IR2125 APPLICATION NOTE IR2125S transistor tip 33B

    40n60

    Abstract: No abstract text available
    Text: IGBT Ordering Information SAMSUNG IGBT * ORDERING INFORMATION S G H 40 N 60 R UF D L Built in FRD UF : Ultra Fast • R : SCSOA Rated • Voltage Rating X 10 • N : N-Channel P : P-Channel •# Current Rating Package Type U : I - PAK R : D - PAK I : I2 - PAK


    OCR Scan     		PDF T0-220 O-264 40n60

    P-Channel IGBT

    Abstract: IGBT Power Module
    Text: Selector Guide 1 TMOS Power MOSFETs Plastic Packaged — T0-220AB Table 1 — P-Channel. 1-3 Table 2 — N -C h a n n e l.1-4 Table 3 — N- and P-Channel Isolated T 0 -2 2 0 . 1-7


    OCR Scan     		PDF T0-220AB O-218 O-226AA TQ-220 P-Channel IGBT IGBT Power Module

    DS4713-2

    Abstract: No abstract text available
    Text: 3Ë GEC P L E S S E Y SEPTEMBER 1997 SEMICONDUCTORS ADVANCE INFORMATION DS4713-2.2 ITS23F06 POWERLINE N-CHANNEL IGBT The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4713-2 ITS23F06 ITS23F06

    PL3120

    Abstract: V0 3150 optocoupler PL3150 PL-3120 atd2a SMPS A43 UCL-200 Xi 6000 Series UPS ups art 600 hp 3150
    Text: Tljjm H EW LE TT » mLHM P A C K A R D 0.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-3150 Single Channel HCPL-315J (Dual Channel) Features • 0.5 A Minimum Peak Output Current • 15 kV/|is Minimum Common Mode Rejection (CMR) at


    OCR Scan     		PDF HCPL-3150 HCPL-315J HCPL-315J: PL-315J: 5965-4780E 5966-2495E PL3120 V0 3150 optocoupler PL3150 PL-3120 atd2a SMPS A43 UCL-200 Xi 6000 Series UPS ups art 600 hp 3150

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4737-2.2 ITS08C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4737-2 ITS08C06 ITS08C06

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4741-2.1 ITS25C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS25C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4741-2 ITS25C12 ITS25C12

    Tag 676 800

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •


    OCR Scan     		PDF MG300Q2YS50 MG300 2YS50 Tag 676 800

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4752-2.1 ITS08C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS08C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4752-2 ITS08C12 ITS08C12

    POWERLINE 4 PRO

    Abstract: No abstract text available
    Text: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4738-2.1 ITS13C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS13C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4738-2 ITS13C06 ITS13C06 POWERLINE 4 PRO

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4754-2.1 ITS35C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4754-2 ITS35C12 ITS35C12

    plessey sp

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4740-2.1 ITS40C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS40C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4740-2 ITS40C06 ITS40C06 plessey sp

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4739-2.1 ITS23C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS23C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4739-2 ITS23C06 ITS23C06

    LT-15V

    Abstract: No abstract text available
    Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25J101 HIGH P O W E R S W I T C H I N G A P P L I C A TIO NS. Unit M O T O R C O N TR OL A P P L I C ATI ONS . . High Input in m m 0 3 .2 ± O .2 15.9 MAX Impedance . High Speed : t f = 0 . 35lis Max.


    OCR Scan     		PDF GT25J101 35lis 5000i LT-15V

    MG150H2YS1

    Abstract: IGBT trr
    Text: GTR MODULE SILICON N CHANNEL IGBT MG150H2YS1 H I GH P O W E R S W I T C H I N G A P P L I C A T I O N S . MOTOR CONTROL APPLICATIONS. High Input Impedince High Speed : tf=1.0ys Max. Low Saturation Voltage : V c e (sa t)=5 .OV(Max.) trr=0.5iis (Max.) Enhancement-Mode


    OCR Scan     		PDF MG150H2YS1 00A/y MG150H2YS1 IGBT trr

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q2YS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH P O W ER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. H ig h In p u t Im p e d an ce EQ U IVA LEN T CIRCUIT H ig h Speed tf=0.5//s M a x . Cl t 1T = 0.5//s (M a x .)


    OCR Scan     		PDF MG300Q2YS40 2-109D2A

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4719-2.2 ITS35F12 POWERLINE N-CHANNEL IGBT The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4719-2 ITS35F12 ITS35F12

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4682-3.3 ITS40F06 POWERLINE N-CHANNEL IGBT The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4682-3 ITS40F06 ITS40F06

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4717-2.2 ITS15F12 POWERLINE N-CHANNEL IGBT The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4717-2 ITS15F12 ITS15F12

    transistor bra 44

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEM BERS ADVANCE INFORMATION S E M I C O N D U C T O R S DS4718-2.2 ITS25F12 POWERLINE N-CHANNEL IGBT The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4718-2 ITS25F12 ITS25F12 transistor bra 44

    Untitled

    Abstract: No abstract text available
    Text: GEC P L ES SE Y S i SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4753-2.1 IT S 1 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS15C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF DS4753-2 ITS15C12

    SGH40N60UFD

    Abstract: No abstract text available
    Text: SGH40N60UFD N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		PDF SGH40N60UFD SGH40N60UFD

    SGH80N60UFD

    Abstract: No abstract text available
    Text: SGH80N60UFD N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V (@ lc=40A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 50nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		PDF SGH80N60UFD SGH80N60UFD

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG400J2YS50 TOSHIBA GTR M O D ULE SILICON N CHANNEL IGBT MG400J2 YS50 HIGH P O W E R SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. H igh In p u t Impedance Includes a Complete H a lf Bridge in One Package.


    OCR Scan     		PDF MG400J2YS50 MG400J2 -400A