Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P CHANNEL MOSFET 10A Search Results

    P CHANNEL MOSFET 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0412JSP-00#J0 Renesas Electronics Corporation 40 V - 10A - N Channel MOS FET Power Switching Visit Renesas Electronics Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL MOSFET 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P-channel N-Channel power mosfet SO-8

    Abstract: IRF7350PBF IRF7350
    Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V


    Original     		PDF IRF7350PbF -100V EIA-481 EIA-541. P-channel N-Channel power mosfet SO-8 IRF7350PBF IRF7350

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3310 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3310 is a P-channel enhancement mode Power MOSFET. The UTC UT3310 uses advanced technology to provide customers with fast switching, low on-resistance and


    Original     		PDF UT3310 UT3310 UT3310G-TN3-R O-252 QW-R502-388 UT33t

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced


    Original     		PDF UTT30P04 UTT30P04 O-252 UTT30P04L-TN3-R UTT30P04G-TN3-R QW-R502-613

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with UTC’s


    Original     		PDF UT30P04 UT30P04 O-252 UT30P04L-TN3-R UT30P04G-TN3-R QW-R502-465

    613 MOSFET

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced


    Original     		PDF UTT30P04 UTT30P04 O-252 UTT30P04L-TN3-R UTT30P04G-TN3-R QW-R502-613 613 MOSFET

    FDS6575

    Abstract: F63TNR F852 SOIC-16
    Text: November 1998 FDS6575 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS6575 OT-23 FDS6575 F63TNR F852 SOIC-16

    DIODE 8069

    Abstract: CPH6615
    Text: CPH6615 Ordering number : ENN8069 N-Channel and P-Channel Silicon MOSFETs CPH6615 General-Purpose Switching Device Applications Features • • • • The CPH6615 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, Ultrahigh-speed switching, thereby enabling high-density mounting.


    Original     		PDF CPH6615 ENN8069 CPH6615 DIODE 8069

    fw341

    Abstract: D2004 W341
    Text: FW341 Ordering number : ENN7922 N-Channel and P-Channel Silicon MOSFETs FW341 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage


    Original     		PDF FW341 ENN7922 PW10s) fw341 D2004 W341

    w907

    Abstract: ENA1810
    Text: FW907 Ordering number : ENA1810 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW907 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET


    Original     		PDF FW907 ENA1810 PW100ms) PW10s) A1810-6/6 w907 ENA1810

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 Preliminary POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original     		PDF UF9Z34 UF9Z34 O-220 UF9Z34L-TA3-T UF9Z34G-TA3-T QW-R502-843

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original     		PDF UF9Z34 UF9Z34 O-220 UF9Z34L-TA3-T UF9Z34G-TA3-T QW-R502-843

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low


    Original     		PDF UTT4407 UTT4407 UTT4407L-S08-R UTT4407G-S08-R UTT4407L-S08-T UTT4407G-S08-T QW-R502-554

    Untitled

    Abstract: No abstract text available
    Text: FW907 Ordering number : ENA1810 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW907 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET


    Original     		PDF FW907 ENA1810 100ms) A1810-6/6

    4505ss

    Abstract: A1770 24V 1A mosfet
    Text: CYStech Electronics Corp. Spec. No. : C439Q8 Issued Date : 2009.02.19 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4505Q8 BVDSS ID RDSON max N-CH 30V 10A 14mΩ P-CH -30V -8.4A 20mΩ Description The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		PDF C439Q8 MTC4505Q8 MTC4505Q8 UL94V-0 4505ss A1770 24V 1A mosfet

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device


    Original     		PDF UT30P04 UT30P04 UT30P04G-TN3-R O-252 QW-R502-465

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT36P03 Power MOSFET -30V, -36A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT36P03 is a P-channel Power MOSFET, using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also


    Original     		PDF UTT36P03 UTT36P03 UTT36P03L-TN3-R UTT36P03G-TN3-R O-252 QW-R502-775

    OM12P10SA

    Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
    Text: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •


    Original     		PDF OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM2P50ST OM8P25SA

    RD10

    Abstract: AAT8303 AAT8303ITS-T1
    Text: AAT8303 20V P-Channel Power MOSFET General Description Features The AAT8303 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's proprietary ultrahigh density Trench technology, and space saving


    Original     		PDF AAT8303 AAT8303 RD10 AAT8303ITS-T1

    P channel MOSFET 10A

    Abstract: P channel MOSFET 10A schematic LPT-4545-A002 UU100 LTC1266-3.3 919AS-4R7M LTC1266 MBR0530T1 MBRS130LT3 Si9410
    Text: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Ultrahigh Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout


    Original     		PDF LTC1266 LTC1266-3 3/LTC1266-5 LTC1266A) LTC1735 LTC1772 OT-23 550kHz, LTC1929 1266fa P channel MOSFET 10A P channel MOSFET 10A schematic LPT-4545-A002 UU100 LTC1266-3.3 919AS-4R7M LTC1266 MBR0530T1 MBRS130LT3 Si9410

    Untitled

    Abstract: No abstract text available
    Text: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Ultrahigh Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout


    Original     		PDF LTC1266 LTC1266-3 3/LTC1266-5 LTC1266A) LTC1735 LTC1772 OT-23 550kHz, LTC1929 1266fa

    A 1266

    Abstract: ltc1266 CTXO212801 MBR0530T1 MBRS130LT3 Si9410 electrolytic capacitor 470
    Text: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Ultra-High Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout


    Original     		PDF LTC1266 LTC1266-3 3/LTC1266-5 LTC1266A) LTC1149 LTC1159 LTC1174 LTC1265 LTC1267 A 1266 ltc1266 CTXO212801 MBR0530T1 MBRS130LT3 Si9410 electrolytic capacitor 470

    Untitled

    Abstract: No abstract text available
    Text: FDS6575 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF FDS6575

    Diode PJ 1266 IV

    Abstract: LTC1267
    Text: /T liriÇ A B LTC1266 LTC 12 6 6 -3 ,3/LTCI 266 -5 TECHNOLOGY Synchronous Regulator Controller for N- or P-Channel MOSFETs FCRTURCS DCSCRIPTIOfl • Ultra-High Efficiency: Over 95% Possible ■ Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout


    OCR Scan     		PDF LTC1266 LTC1266A) LTC1148 LTC1149 LTC1159 LTC1174 LTC1265 LTC1267 0D1260^ Diode PJ 1266 IV LTC1267

    Untitled

    Abstract: No abstract text available
    Text: IRFP9140 Semiconductor April 1999 Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


    OCR Scan     		PDF IRFP9140 -100V, O-247 -100V 200i2