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    P CHANNEL POWER TRENCH MOSFET Search Results

    P CHANNEL POWER TRENCH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL POWER TRENCH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode TA 20-08

    Abstract: P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet
    Text: SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power


    Original     		PDF SPC4703 SPC4703combines -20V/-3 diode TA 20-08 P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet

    P-Channel MOSFET code 1A

    Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
    Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect


    Original     		PDF SPC6801 SPC6801combines -30V/-2 105ise P-Channel MOSFET code 1A P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V

    Schottky Diode 20V 5A

    Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
    Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect


    Original     		PDF SPC6801 SPC6801combines -30V/-2 105ise Schottky Diode 20V 5A Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A

    FDMC4435BZ

    Abstract: No abstract text available
    Text: FDMC4435BZ tm P-Channel Power Trench MOSFET -30V, -18A, 20.0mΩ Features General Description „ Max rDS on = 20.0mΩ at VGS = -10V, ID = -8.5A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has


    Original     		PDF FDMC4435BZ FDMC4435BZ

    P-channel power mosfet SO-8

    Abstract: MARKING CODE AA circuit diagram of mosfet buck boost SO-8 mosfet low-voltage MARKING QG 6 PIN MOSFET SO-8 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4101PR2
    Text: NTMS4101PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Single This P-Channel device was designed using ON Semiconductor’s leading trench technology for low RDS on performance in the SO-8 package for high power and current handling capability. The low


    Original     		PDF NTMS4101PR2 NTMS4101PR2/D P-channel power mosfet SO-8 MARKING CODE AA circuit diagram of mosfet buck boost SO-8 mosfet low-voltage MARKING QG 6 PIN MOSFET SO-8 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4101PR2

    PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA

    Abstract: NTMD4102PR2
    Text: NTMD4102PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Dual This P-Channel device was designed using ON Semiconductor’s leading edge trench technology for low RDS on performance in the SO-8 dual package for high power and current handling capability.


    Original     		PDF NTMD4102PR2 NTMD4102PR2/D PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA NTMD4102PR2

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .


    Original     		PDF OT-363 CJ7252KDW OT-363 2N7002K CJ502K

    Untitled

    Abstract: No abstract text available
    Text: NTR4101PT1 Product Preview Trench Power MOSFET -20 V, P-Channel, SOT-23 Single This P-Channel device was designed using ON Semiconductor’s leading trench technology for low RDS on performance in the SOT-23 package for surface mount PCBs. The low RDS(on) performance is


    Original     		PDF NTR4101PT1 OT-23 NTR4101PT1/D

    Untitled

    Abstract: No abstract text available
    Text: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description ̈ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		PDF

    FDC3535

    Abstract: marking 535
    Text: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description „ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NTJD4103PT1 Product Preview Trench Power MOSFET -20 V Dual, P-Channel, Gate Zener, SC-88 This P-Channel dual device was designed with a small footprint package 2 X 2 mm and ON Semiconductor’s leading RDS(on) trench technology for reduced footprint and increased circuit efficiency. The


    Original     		PDF NTJD4103PT1 SC-88 NTJD4103PT1/D

    419B-02

    Abstract: NTJD2101PT1
    Text: NTJD2101PT1 Product Preview Trench Power MOSFET -8.0 V Dual, P-Channel, Gate Zener, SC-88 This P-Channel dual device was designed with a small footprint package 2 X 2 mm and ON Semiconductor’s leading trench process featuring low RDS(on) for reduced footprint and increased circuit


    Original     		PDF NTJD2101PT1 SC-88 NTJD2101PT1/D 419B-02 NTJD2101PT1

    FDMC4435BZ

    Abstract: 63a23 05MAX00 FDMC4435B
    Text: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC4435BZ FDMC4435BZ 63a23 05MAX00 FDMC4435B

    FDMC4435BZ

    Abstract: RCA 395 fairchild top marking mo-229 pad layout trench mosfet MO-229 63A23
    Text: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC4435BZ FDMC4435BZ RCA 395 fairchild top marking mo-229 pad layout trench mosfet MO-229 63A23

    Untitled

    Abstract: No abstract text available
    Text: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 mΩ Features General Description „ Max rDS on = 20 mΩ at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC4435BZ

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UT2352 UT2352 UT2352L UT2352-AE3-R UT2352L-AE3-R OT-23 QW-R502-157

    UTC654L-AG6-R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTC654 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UTC654 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UTC654 UTC654 UTC654L-AG6-R UTC654G-AG6-R OT-26 QW-R502-153 UTC654L-AG6-R

    157 C

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UT2352 UT2352 UT2352L-AE3-R UT2352G-AE3-R OT-23 QW-R502-157 157 C

    Untitled

    Abstract: No abstract text available
    Text: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC4435BZ FDMC4435BZ

    UT2352G-AE3-R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UT2352 UT2352 UT2352L UT2352G UT2352-AE3-R UT2352L-AE3-R UT2352G-AE3-R OT-23 QW-R502-157 UT2352G-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTC654 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UTC654 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UTC654 UTC654 UTC654L UTC654-AG6-R UTC654L-AG6-R OT-26 QW-R502-153

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION  As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UT2352 UT2352 UT2352G-AE3-R OT-23 QW-R502-157

    vcx 02 544

    Abstract: No abstract text available
    Text: FDC697P P-Channel 1.8V Specified Bottomless PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.


    Original     		PDF FDC697P vcx 02 544

    FLMP SuperSOT-6

    Abstract: FDC697P
    Text: FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. • –8 A, –20 V


    Original     		PDF FDC697P FLMP SuperSOT-6 FDC697P