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    P N-CHANNEL D-S MOSFET Search Results

    P N-CHANNEL D-S MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P N-CHANNEL D-S MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SI4563DY

    Abstract: No abstract text available
    Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested


    Original     		Si4563DY Si4563DY-T1--E3 08-Apr-05 PDF

    list of P channel power mosfet

    Abstract: si4563 SI4563DY
    Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested


    Original     		Si4563DY Si4563DY-T1--E3 52243--Rev. 24-Oct-05 list of P channel power mosfet si4563 PDF

    si3529

    Abstract: Si3529DV SI3529DV-T1-E3
    Text: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V


    Original     		Si3529DV Si3529DV-T1--E3 51448--Rev. 01-Aug-05 si3529 SI3529DV-T1-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V IS H A Y - S i4 5 0 0 D Y New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V d s (V) N-Channel 20 P-Channel Id (A) r D S (o n )


    OCR Scan     		S-00269-- 26-Apr-99 4500DY PDF

    SI9948DY

    Abstract: No abstract text available
    Text: IT S ilico n ix SÌ9948DY A M ember o f the T emic G roup Dual P-Channel Enhancement-Mode MOSFET Product Summary V DS r D S on -6 0 Id (Q) (A) 0.25 @ V GS = - 1 0 V t2.3 0.50 @ V o s = - 4 .5 V 11.6 (V) Si p SO-8 n Top View n Di Di D P-Channel MOSFET D P-Channel MOSFET


    OCR Scan     		9948DY 150oC) SI9948DY PDF

    Untitled

    Abstract: No abstract text available
    Text: SÌ6544DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Rd s <o n ] (&) I d (A) 0.035 @ VGS= 10 v ±4.0 V D* (V) N-Channel 30 0.050 @ VGS = 4.5 V ±3.4 0.045 @ VGS = -1 0 V ±3.5 0.090 @ V gs = -4 .5 V ±2.5 a t -30 P-Channel Dl Q S2 P TSSOP-8 Di Si


    OCR Scan     		6544DQ 6544D S-56944-- 23-Nov-98 Si6544PQ S-56944--Rev. PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic SÌ4532DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) N-Channel 30 P-Channel -30 rDS(on) (Q ) I d (A) 0.065 @ VGs = 10 V ±3.9 0.095 @ VGs = 4.5 V ±3.1 0.085 @ VGS = -10 V ±3.5 0.19 @ VGs = -4.5 V


    OCR Scan     		4532DY S-49520--Rev. 18-Dec-96 PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic SÌ4542DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) 30 N-Channel P-Channel -30 rDS(on) (Q ) I d (A) 0.025 @ VGS = 10 V ± 6.9 0.035 @ VGS = 4.5 V ±5.8 0.032 @ VGS = -10 V ±6.1 0.045 @ VGS = -4.5 V


    OCR Scan     		4542DY S-54950--Rev. 29-Sep-97 S-54950-- PDF

    Si4558DY

    Abstract: No abstract text available
    Text: SÌ4558DY Vishay Sîliconix N- and P-Channel 30-V D-S MOSFET P R O D U C T SU M M ARY V d sO n N-Channel P-Channel R o s (on ) iß ) Id W 0.04 0 VGS = 10 V ±6 0.060 @ V q s = 4 .5 V ±4.B 30 0.040 @ VGs = “ 10 V ±6 0.070 @ V q S = “ 4-5 V ±4.4 -30


    OCR Scan     		4558DY SI4558DY S-56944--Rev. 23-Nov-98 Si4558DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ6801DQ S e m i c o n d u c t o r s Dual N- and P-Channel, Reduced Qg, Fast Switching MOSFET Product Summary V d s V N-Channel P-Channel 20 20 IDS(on) (Q ) I d (A ) 0.160 @ VGS = 4.5 V ±1.9 0.260 @ VGS = 3.0 V ±1.5 0.190 @ VGs = -4.5 V ± 1.7


    OCR Scan     		6801DQ S-49520--Rev. 18-Dec-96 PDF

    25S16

    Abstract: No abstract text available
    Text: SÌ4542DY - SNicönix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) N-Channel P-Channel r DS(ON) (-2) I d (A) 0.025 @ VGS = 10 V ± 6 .9 30 0.035 @ VGS = 4.5 V


    OCR Scan     		4542DY S-56944-- ov-98 25S16 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ6552DQ S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) N-Channel P-Channel I d (A ) rDS(on) (Q ) 20 0.08 @ VGs = 4.5 V ± 2.8 0.11 @ VGs = 2.5 V ± 2.1 0.1 @ VGS = -4 .5 V ± 2.5 0.18 @ V GS = - 2.5 V


    OCR Scan     		6552DQ S-49534-- 06-0ct 06-Oct-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ Si4500DY VISHAY Vishay Siliconix New Product Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V D S (V ) N-Channel 20 P-Channel -2 0 r D S (o n ) ( ) Id (A ) 0.030 @ VGS = 4.5 V ± 7 .0 0.040 @ VGS = 2.5 V ± 6 .0


    OCR Scan     		Si4500DY S2SM735 DD17flflT PDF

    7130-1 transistor

    Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
    Text: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200


    OCR Scan     		SM035X_ S-02367--Rev. 23-Oct-OO 7130-1 transistor TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X PDF

    L00A

    Abstract: ic l00a si6954
    Text: Tem ic SÌ6954DQ S e m i c o n d u c t o r s Dual N-Channel 30-V D-S Rated MOSFET Product Summary V u s(V ) rDS(on) (Q ) I d (A ) 0.065 @ VGS= 10 V ± 3 .9 0.095 @ VGS = 4.5 V ± 3.1 30 T SSO P-8 ;<JE Ô Si Ô s. N -Channel M O SFET N-Channel M OSFET T S S O P -8


    OCR Scan     		6954DQ 20stics S-49534-- ct-97 06-Oct-97 L00A ic l00a si6954 PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic SÌ6543DQ S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ VGs = -1 0 V ±2.5 0.19 @ VGs = -4-5 V


    OCR Scan     		6543DQ S-47958--Rev. 15-Apr-96 TSSOP-8/-28 PDF

    Si6552DQ

    Abstract: No abstract text available
    Text: Tem ic SÌ6552DQ S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V) N-Channel P-Channel 20 12 r DS(on) ( ß ) I d (A) 0.08 @ VGs = 4.5 V ±2.8 0.11 @ VGS = 2.5 V ±2.1 0.1 @ VGs = -4.5 V ±2.5 0.18 @ VGS = -2.5 V


    OCR Scan     		6552DQ S-47620--Rev. 12-Aug-96 Si6552DQ PDF

    Si6543DQ

    Abstract: No abstract text available
    Text: Temic SÌ6543DQ Se m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V u s (V ) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ Vos = -10 V ±2.5 0.19 @ V(jS = -4.5 V


    OCR Scan     		6543DQ 150aC S-49534-- 06-Oct-97 06-0ct Si6543DQ PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic SÌ6544DQ Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) N-Channel 30 P-Channel -30 rDS(on) (Q ) I d (A) 0.035 @ VGs = 10 V ±4 .0 0.050 @ Vos = 4.5 V ±3 .4 0.045 @ V GS = -10 V ±3.5 0.090 @ VGs = -4-5 V ±2.5


    OCR Scan     		6544DQ S-49554--Rev. 07-Apr S-49554-- 07-Apr-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: SÌ4558DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V d s (V ) N-Channel P-Channel r DS(on) (S3) I d (A) 0.040 Vq S = 10 V ±6 0.060 @ VGs = 4.5 V ±4.8 30 0.040 @ Vqs = -10 V ±6 0.070 @ VGS = -4.5 V ±4.4 -30 s2 o SO-8 ~8~| Ql Œ


    OCR Scan     		4558DY S-56944-- 23-Nov-9i 23-Nov-98 PDF

    25S16

    Abstract: No abstract text available
    Text: _ SÌ4542PY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Vos (V) N-Channel P-Channel flfW O N) (ß) l D (A) 0 .025 VGs = 10 V ±6.9 0.035 @ VGS = 4,5 V ±5.8 0,032® VGS = -1 0 V ±6.1 0.045 @ VGS = -4 .5 V ±5.1 30 -30


    OCR Scan     		4542PY 23-Nov-98 Si4542DY S-56944-- 25S16 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7? tv u J 6 olZ'&Q. . —/ _ SÌ99S8DY Dual Enhancement-Mode MOSFET N- and P- Channel Product Summary V d s (V) N-Channel 20 P-Channel -20 I d (A) ±3.5 ±3 ±2.5 ±3.5 ±3 ±2.5 rDS(on) (&) 0.10 @ VGS = 10 v 0.12 @ VGs = 6 V


    OCR Scan     		99S8DY Si4532DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96 9958DY PDF