Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P-CHANNEL 200-V D-S MOSFET Search Results

    P-CHANNEL 200-V D-S MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL 200-V D-S MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2327DS

    Abstract: No abstract text available
    Text: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original     		PDF Si2327DS O-236 OT-23) 70lectual 18-Jul-08

    Si2327DS

    Abstract: No abstract text available
    Text: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original     		PDF Si2327DS O-236 OT-23) 08-Apr-05

    73240

    Abstract: Si2327DS
    Text: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original     		PDF Si2327DS O-236 OT-23) 70ycle S-42448--Rev. 10-Jan-05 73240

    SC-89

    Abstract: Si1029X
    Text: Si1029X New Product Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (mA) 1.40 @ VGS = 10 V 500 3 @ VGS = 4.5 V 200 4 @ VGS = –10 V –500 8 @ VGS = –4.5 V –25 FEATURES


    Original     		PDF Si1029X 08-Apr-05 SC-89

    SC-89

    Abstract: Si1029X
    Text: Si1029X New Product Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (mA) 1.40 @ VGS = 10 V 500 3 @ VGS = 4.5 V 200 4 @ VGS = –10 V –500 8 @ VGS = –4.5 V –25 FEATURES


    Original     		PDF Si1029X S-03518--Rev. 11-Apr-01 SC-89

    Si7431DP

    Abstract: No abstract text available
    Text: Si7431DP New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 0.174 @ VGS = −10 V −3.8 0.180 @ VGS = −6 V −3.6 Qg (Typ) 88 D TrenchFETr Power MOSFETS D Ultra-Low On-Resistance Critical for Application


    Original     		PDF Si7431DP 07-mm Si7431DP-T1--E3 S-41817--Rev. 11-Oct-04

    SC-89

    Abstract: Si1035X
    Text: Si1035X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 8 @ VGS = –4.5 V


    Original     		PDF Si1035X 08-Apr-05 SC-89

    "MARKING CODE M"

    Abstract: SC-89 Si1035X
    Text: Si1035X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 8 @ VGS = –4.5 V


    Original     		PDF Si1035X S-03201--Rev. 12-Mar-01 "MARKING CODE M" SC-89

    Untitled

    Abstract: No abstract text available
    Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate


    Original     		PDF Si7431DP 2002/95/EC Si7431DP-T1-E3 Si7431DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate


    Original     		PDF Si7431DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-89

    Abstract: Si1029X
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •


    Original     		PDF Si1029X SC-89 08-Apr-05 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate


    Original     		PDF Si7431DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate


    Original     		PDF Si7431DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate


    Original     		PDF Si7431DP 2002/95/EC Si7431DP-T1-E3 Si7431DP-T1-GE3 18-Jul-08

    SI1029X-T1GE3

    Abstract: SC-89 Si1029X
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •


    Original     		PDF Si1029X SC-89 18-Jul-08 SI1029X-T1GE3 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V


    Original     		PDF Si1035X 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V


    Original     		PDF Si1035X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V


    Original     		PDF Si1035X 2002/95/EC SC-89 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V


    Original     		PDF Si1035X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V


    Original     		PDF Si1035X 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V


    Original     		PDF Si1035X 2002/95/EC SC-89 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 S G D TAB D G D (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 O-263 IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P O-220 100ms IXTA26P20P

    7130-1 transistor

    Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
    Text: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200


    OCR Scan     		PDF SM035X_ S-02367--Rev. 23-Oct-OO 7130-1 transistor TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X

    2n6851

    Abstract: No abstract text available
    Text: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET


    OCR Scan     		PDF 2n6851 MIL-S-19500/564 Param2n6851_ P-37010â 2SM735