IXTR120P20T
Abstract: No abstract text available
Text: Advance Technical Information IXTR120P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS
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IXTR120P20T
300ns
ISOPLUS247
E153432
120P20T
IXTR120P20T
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IXTR120P20T
Abstract: No abstract text available
Text: Preliminary Technical Information IXTR120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings
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IXTR120P20T
300ns
ISOPLUS247
E153432
120P20T
IXTR120P20T
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTR120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS
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IXTR120P20T
300ns
ISOPLUS247
E153432
-55nds
120P20T
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ON 4998
Abstract: 4998 MOSFET 50 Amp 100 volt mosfet SBF50P10-023L
Text: SBF50P10-023L SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4998, REV. - RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL FEATURES: • 100 Volt, 0.023 Ohm, 90A MOSFET current limited to 50A by package • Characterized for VGS of 4.5V for Logic Level Drive
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SBF50P10-023L
ON 4998
4998 MOSFET
50 Amp 100 volt mosfet
SBF50P10-023L
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Untitled
Abstract: No abstract text available
Text: Analog Power AM90P06-06P P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 6.2 @ VGS = -10V 7.3 @ VGS = -4.5V ID (A) 90a Typical Applications:
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AM90P06-06P
17failure
AM90P06-06P
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Untitled
Abstract: No abstract text available
Text: Analog Power AM90P06-20B P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 20 @ VGS = -10V 22 @ VGS = -4.5V ID (A) -90a Typical Applications:
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AM90P06-20B
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DIODE 5035
Abstract: No abstract text available
Text: SHD219720 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5035, REV. - LOW RDS HERMETIC POWER MOSFET - P-CHANNEL FEATURES: • 60 Volt, 0.01 Ohm, 90A MOSFET • Isolated Hermetic Metal Package • Ultra Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
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SHD219720
DIODE 5035
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Untitled
Abstract: No abstract text available
Text: PolarPTM Power MOSFET IXTK90P20P IXTX90P20P VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 200V - 90A Ω 44mΩ TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTK90P20P
IXTX90P20P
O-264
100ms
90P20P
04-22-08-B
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*9933b
Abstract: ixtk90p20p IXTX90P20P PLUS247 DS99933B
Text: I XTK90P20P PolarPTM Power MOSFET VDSS ID25 IXTX90P20P = = ≤ RDS on - 200V - 90A Ω 44mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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XTK90P20P
IXTX90P20P
O-264
100ms
IXTK90P20P
90P20P
03-25-09-D
*9933b
ixtk90p20p
IXTX90P20P
PLUS247
DS99933B
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR140P10T RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR140P10T
-100V
ISOPLUS247
E153432
140P10T
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switching pushpull
Abstract: IXTN90P20P
Text: PolarPTM Power MOSFET IXTN90P20P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 90A Ω 44mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTN90P20P
OT-227
E153432
100ms
90P20P
04-22-08-C
switching pushpull
IXTN90P20P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTH90P10P IXTT90P10P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 90A Ω 25mΩ TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH90P10P
IXTT90P10P
O-247
100ms
90P10P
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P-CHANNEL 45A TO-247 POWER MOSFET
Abstract: IXTH90P10P IXTT90P10P
Text: IXTH90P10P IXTT90P10P PolarPTM Power MOSFET VDSS ID25 = = ≤ RDS on - 100V - 90A Ω 25mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH90P10P
IXTT90P10P
O-247
O-268
90P10P
P-CHANNEL 45A TO-247 POWER MOSFET
IXTH90P10P
IXTT90P10P
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IXTR140P10T
Abstract: No abstract text available
Text: Preliminary Technical Information IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR140P10T
-100V
ISOPLUS247
E153432
-140A
140P10T
IXTR140P10T
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IXTN90P20P
Abstract: No abstract text available
Text: IXTN90P20P PolarPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 90A Ω 44mΩ P-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTN90P20P
OT-227
E153432
100ms
90P20P
03-25-09-D
IXTN90P20P
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Untitled
Abstract: No abstract text available
Text: PolarPTM Power MOSFET VDSS ID25 IXTH90P10P IXTT90P10P = = ≤ RDS on - 100V - 90A Ω 25mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH90P10P
IXTT90P10P
O-247
O-268
90P10P
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Untitled
Abstract: No abstract text available
Text: I XTK90P20P PolarPTM Power MOSFETs VDSS ID25 IXTX90P20P = = ≤ RDS on - 200V - 90A Ω 44mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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XTK90P20P
IXTX90P20P
O-264
100ms
IXTK90P20P
90P20P
03-25-09-D
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Untitled
Abstract: No abstract text available
Text: IXTN90P20P PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ D RDS on S miniBLOC E153432 - 200V - 90A Ω 44mΩ G S S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTN90P20P
E153432
100ms
90P20P
03-25-09-D
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Untitled
Abstract: No abstract text available
Text: IXTT90P10P IXTH90P10P PolarPTM Power MOSFETs VDSS ID25 = = ≤ RDS on - 100V - 90A Ω 25mΩ D P-Channel Enhancement Mode Avalanche Rated G TO-268 (IXTT) S G S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTT90P10P
IXTH90P10P
O-268
100ms
90P10P
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P channel MOSFET 50A
Abstract: KRF7105
Text: IC IC SMD Type HEXFET Power MOSFET KRF7105 Features Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol
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KRF7105
-100A/
P channel MOSFET 50A
KRF7105
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irf 536
Abstract: IRF p 536 MOSFET transistor irf 649
Text: PD - 96102 IRF7105QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET
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IRF7105QPbF
EIA-481
EIA-541.
irf 536
IRF p 536 MOSFET
transistor irf 649
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er T e c h n o lo g y 9 APT20M25JNR 200V 100A 0.025Í2 APT20M30JNR 200V 90A 0.030Í1 ISOTOP* 5 Û "UL Recognized" File No. E145592 S POWER MOS IV‘ AVALANCHE RATED ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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APT20M25JNR
APT20M30JNR
E145592
APT20M25JNR
APT20M30JNR
OT-227
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APT20M25JNR
Abstract: APT20M25 APT20M30JNR
Text: A dvanced P ow er Te c h n o l o g y ' APT20M25JNR 200V 100A 0.025Q APT20M30JNR 200V 90A 0.030Q ISOTOP* mMWJaîiMWBÉMâ % “UL Recognized" File No. E145592 S N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT20M25JNR
APT20M30JNR
E145592
APT20M3QJNR
MIL-STD-750
OT-227
APT20M25
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1RF7105
Abstract: 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a
Text: PD - 9.1097B International IOR Rectifier IRF7105 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching 'P-CHANNEL MOSFET !
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1097B
IRF7105
1RF7105
1RF710
irf7105 mosfet
MOSFET C65
irf7105
ior 050a
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