p-channel mosfet
Abstract: TLM621
Text: Central CTLDM8002A-M621 SURFACE MOUNT TINY LEADLESS MODULETM ENHANCEMENT-MODE P-CHANNEL MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLMTM 2x1mm package.
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CTLDM8002A-M621
CTLDM8002A-M621
TLM621
30-January
200mA
TLM621
p-channel mosfet
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marking code CFR
Abstract: marking CFR
Text: CTLM8110-M832D MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM8110-M832D consists of an P-Channel Enhancement-mode MOSFET
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CTLM8110-M832D
CTLM8110-M832D
TLM832D
100mA
500mA
marking code CFR
marking CFR
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CMLM8205
Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
Text: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET
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CMLM8205
280mA,
500mA
OT-563
CMLM8205
OT-563
100mA
21x9x9
27x9x17
20x18x5
PB CMLM8205
mosfet 4812
marking 34 diode SCHOTTKY
sot-563 MOSFET D1
P-Channel Enhancement MOSFET module
4812 mosfet
"Schottky Diode"
Schottky Diode
power mosfet 500 A
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CEDM8001VL
Abstract: No abstract text available
Text: CEDM8001VL SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001VL is a P-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed
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CEDM8001VL
CEDM8001VL
OT-883VL
CEDM7001VL
100mW
11-September
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CMLM8205
Abstract: mosfet low vgs
Text: Central CMLM8205 MULTI DISCRETE Semiconductor Corp. MODULE SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM DESCRIPTION: The Central Semiconductor CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a Low
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CMLM8205
OT-563
CMLM8205
200mA
115mA
100mA
500mA
mosfet low vgs
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CMLM0584
Abstract: No abstract text available
Text: CMLM0584 Multi Discrete Module w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0584 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a
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CMLM0584
OT-563
100mA
500mA
28-July
CMLM0584
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Untitled
Abstract: No abstract text available
Text: CMLM0584 Multi Discrete Module w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0584 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a
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CMLM0584
OT-563
100mA
500mA
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Untitled
Abstract: No abstract text available
Text: CMLM0584 Multi Discrete Module w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0584 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a
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CMLM0584
CMLM0584
OT-563
100mA
500mA
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Untitled
Abstract: No abstract text available
Text: CMLM0585 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0585 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a
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CMLM0585
OT-563
650mA)
200mA,
100mA
500mA
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Untitled
Abstract: No abstract text available
Text: CMLM8205 MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a
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CMLM8205
CMLM8205
OT-563
200mA
200mA,
100mA
500mA
20-January
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PDF
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Untitled
Abstract: No abstract text available
Text: CMLM8205 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel enhancement-mode MOSFET and a
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CMLM8205
CMLM8205
OT-563
200mA
200mA,
100mA
500mA
18-February
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high current mosfet
Abstract: No abstract text available
Text: CMLM0585 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0585 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a
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CMLM0585
CMLM0585
OT-563
650mA)
200mA
200mA,
100mA
high current mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: CMLM0584 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0584 is a Multi Discrete Module™ consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky
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CMLM0584
CMLM0584
OT-563
100mA
500mA
18-February
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PDF
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Untitled
Abstract: No abstract text available
Text: CMLM0585 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0585 is a Multi Discrete Module™ consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky
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CMLM0585
CMLM0585
OT-563
650mA)
1800f
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Untitled
Abstract: No abstract text available
Text: CMLM0585 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0585 is a Multi Discrete Module™ consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky
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CMLM0585
CMLM0585
OT-563
650mA)
1800TS
18-February
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PDF
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Untitled
Abstract: No abstract text available
Text: CTLM8110-M832D MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER TLM832D CASE • Device is Halogen Free by design APPLICATIONS • • • • Load Power Switches DC - DC Converters LCD Backlighting
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CTLM8110-M832D
CTLM8110M832D
550mV
100mA
500mA
TLM832D
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CTLM7110-M832D
Abstract: CTLM8110-M832D TLM832D marking CFR
Text: CTLM8110-M832D MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER TM Top View Bottom View TLM832D CASE APPLICATIONS • Load Power Switches • DC / DC Converters • LCD Backlighting • Battery powered portable devices
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CTLM8110-M832D
TLM832D
CTLM8110-M832D
100mA
500mA
29-September
CTLM7110-M832D
marking CFR
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PDF
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VKM40-06P1
Abstract: eco-pac CoolMOS Power Transistor power mosfet 200A mosfet Vds 50 Vgsth a22055 welding mosfet
Text: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13
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VKM40-06P1
B25/50
VKM40-06P1
eco-pac
CoolMOS Power Transistor
power mosfet 200A
mosfet Vds 50 Vgsth
a22055
welding mosfet
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VKM40-06P1
Abstract: eco-pac vkm40
Text: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13
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VKM40-06P1
dissipa05
B25/50
VKM40-06P1
eco-pac
vkm40
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mosfet transistor 0.35 um
Abstract: No abstract text available
Text: VHM 40-06P1 CoolMOS Power MOSFET in ECO-PAC 2 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 Preliminary data L4 L6 K 12 L9 P 18 R 18 NTC F 10 X 15 K 10 K 13 T 18 V 18
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40-06P1
B25/50
20091214a
mosfet transistor 0.35 um
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CoolMOS Power Transistor
Abstract: power mosfet 200A VHM40-06P1
Text: VHM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 K 12 Preliminary data sheet L9 P 18 R 18 NTC F10 K 13 K10 Pin arangement see outlines
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VHM40-06P1
B25/50
CoolMOS Power Transistor
power mosfet 200A
VHM40-06P1
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Untitled
Abstract: No abstract text available
Text: VHM 40-06P1 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 Preliminary data K 12 L9 P 18 R 18 NTC F 10 X 15 K 10 K 13 T 18 V 18
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40-06P1
B25/50
20091214a
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PDF
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Untitled
Abstract: No abstract text available
Text: VHM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base K 12 L9 P 18 R 18 NTC Preliminary data sheet 1 L4 L6 F10 K 13 K10 Pin arangement see outlines
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VHM40-06P1
B25/50
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PDF
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Untitled
Abstract: No abstract text available
Text: VKM 40-06P1 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base L4 L6 Preliminary data K 2 A L9 E 0 P 8 R 8 NTC F 0 X 5 K 0 K 3
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40-06P1
B25/50
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