irf7381pbf
Abstract: No abstract text available
Text: PD - 95940 IRF7381PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Freel Description l l HEXFET® These P-Channel power MOSFETs from International Rectifier utilize advanced processing
|
Original
|
IRF7381PbF
EIA-481
EIA-541.
irf7381pbf
|
PDF
|
IRF P-Channel FET 100v
Abstract: 68A diode IR 200V P-Channel fets k 68a irf P-Channel MOSFET audio IRFG5210 4.5v to 100v input regulator
Text: Preliminary Data Sheet No. PD - 9.1664 HEXFET TRANSISTORS IRFG5210 COMBINATION N AND P CHANNEL 2 EACH Ω (N and P channel ) HEXFET 200 Volt, 1.60Ω Product Summary The HEXFET technology is the key to International Rectifier’s Part Number advanced line of power MOSFET transistors. The efficient
|
Original
|
IRFG5210
MO-036AB
IRF P-Channel FET 100v
68A diode
IR 200V P-Channel fets
k 68a
irf P-Channel MOSFET audio
IRFG5210
4.5v to 100v input regulator
|
PDF
|
mosfet power totem pole CIRCUIT
Abstract: parallel connection of MOSFETs HEXFET Power MOSFET P-Channel hexfet audio amplifier IR power mosfet switching power supply 20V P-Channel Power MOSFET AN-950 AN-940 mosfet hexfet pair HEXFET Characteristics
Text: AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load
|
Original
|
|
PDF
|
mosfet power totem pole CIRCUIT
Abstract: IR power mosfet switching power supply AN-940 mosfet AN-950 HEXFET Power MOSFET P-Channel AN937 AN-948 P-channel HEXFET Power MOSFET parallel connection of MOSFETs hexfet audio amplifier
Text: Index AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95503B IRF5804PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
|
Original
|
95503B
IRF5804PbF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
|
Original
|
PD-95262B
IRF5803PbF
|
PDF
|
IRF7425
Abstract: MS-012AA
Text: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
|
Original
|
IRF7425
IRF7425
MS-012AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description D These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
|
Original
|
PD-95262B
IRF5803PbF
|
PDF
|
smd 2f
Abstract: IRFN9140
Text: Provisional Data Sheet No. PD-9.1553A HEXFET POWER MOSFET IRFN9140 P-CHANNEL Ω HEXFET -100 Volt, 0.20Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state
|
Original
|
IRFN9140
smd 2f
IRFN9140
|
PDF
|
smd 2f
Abstract: IRFN9240 Diode smd 2f ir mosfet smd package smd diode 44 smd diode 2F 7A
Text: Provisional Data Sheet No. PD-9.1554A HEXFET POWER MOSFET IRFN9240 P-CHANNEL Ω HEXFET -200 Volt, 0.51Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state
|
Original
|
IRFN9240
smd 2f
IRFN9240
Diode smd 2f
ir mosfet smd package
smd diode 44
smd diode 2F 7A
|
PDF
|
IRF5820
Abstract: IRF5800 IRF5810 SI3443DV IRF5851
Text: PD -94198A IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
-94198A
IRF5810
IRF5820
IRF5800
IRF5810
SI3443DV
IRF5851
|
PDF
|
IRF5820
Abstract: IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d
Text: PD - 94333A IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
4333A
IRF5804
OT-23.
IRF5820
IRF5800
IRF5804
SI3443DV
IRF5851
IRF5806
irf5852
sot-23 MARKING CODE 3d
|
PDF
|
IRF5820
Abstract: 94333 IRF5800 IRF5804 SI3443DV k 9632 sot-23 MARKING CODE 3d
Text: PD - 94333B IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
94333B
IRF5804
OT-23.
IRF5820
94333
IRF5800
IRF5804
SI3443DV
k 9632
sot-23 MARKING CODE 3d
|
PDF
|
IRF5800
Abstract: IRF5803 SI3443DV sot-23 Marking 3D Switching Diode SOT23 Marking 3D Switching Diode SOT23 Marking 3J MARKING CODE 88 TSOP-6
Text: PD-94015 IRF5803 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
PD-94015
IRF5803
simila5805
IRF5806
IRF5800
IRF5803
SI3443DV
sot-23 Marking 3D
Switching Diode SOT23 Marking 3D
Switching Diode SOT23 Marking 3J
MARKING CODE 88 TSOP-6
|
PDF
|
|
|
548B
Abstract: IRF9230 JANTX2N6806 JANTXV2N6806
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.548B HEXFET JANTX2N6806 POWER MOSFET JANTXV2N6806 [REF:MIL-PRF-19500/562] [GENERIC:IRF9230] P-CHANNEL Ω HEXFET -200 Volt, 0.80Ω Product Summary HEXFET technology is the key to International
|
Original
|
JANTX2N6806
JANTXV2N6806
MIL-PRF-19500/562]
IRF9230]
548B
IRF9230
JANTX2N6806
JANTXV2N6806
|
PDF
|
IRFF9120
Abstract: JANTX2N6845 JANTXV2N6845
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.552B HEXFET JANTX2N6845 POWER MOSFET JANTXV2N6845 [REF:MIL-PRF-19500/563] [GENERIC:IRFF9120] P-CHANNEL Ω HEXFET -100 Volt, 0.60Ω Product Summary HEXFET technology is the key to International
|
Original
|
JANTX2N6845
JANTXV2N6845
MIL-PRF-19500/563]
IRFF9120]
IRFF9120
JANTX2N6845
JANTXV2N6845
|
PDF
|
550B
Abstract: IRFF9130 JANTX2N6849 JANTXV2N6849 9550B
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.550B HEXFET JANTX2N6849 POWER MOSFET JANTXV2N6849 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9130] P-CHANNEL Ω HEXFET -100 Volt, 0.30Ω Product Summary HEXFET technology is the key to International
|
Original
|
JANTX2N6849
JANTXV2N6849
MIL-PRF-19500/564]
IRFF9130]
550B
IRFF9130
JANTX2N6849
JANTXV2N6849
9550B
|
PDF
|
553B
Abstract: IRFF9220 JANTX2N6847 JANTXV2N6847
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.553B HEXFET JANTX2N6847 POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/563] [GENERIC:IRFF9220] P-CHANNEL Ω HEXFET -200 Volt, 1.5Ω Product Summary HEXFET technology is the key to International
|
Original
|
JANTX2N6847
JANTXV2N6847
MIL-PRF-19500/563]
IRFF9220]
553B
IRFF9220
JANTX2N6847
JANTXV2N6847
|
PDF
|
JANTX2N6851
Abstract: 551B IRFF9230 JANTXV2N6851
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.551B JANTX2N6851 HEXFET POWER MOSFET JANTXV2N6851 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9230] P-CHANNEL Ω HEXFET -200 Volt, 0.80Ω Product Summary HEXFET technology is the key to International
|
Original
|
JANTX2N6851
JANTXV2N6851
MIL-PRF-19500/564]
IRFF9230]
JANTX2N6851
551B
IRFF9230
JANTXV2N6851
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FOR REVIEW ONLY IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -20V 90@VGS = -4.5V 135@VGS = -2.5V -2.9A -2.3A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
IRF5810
|
PDF
|
EIA-541
Abstract: F7101 IRF7101 IRF7420 Ultra Low rds
Text: PD - 94278A IRF7420 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS RDS on max ID -12V 14mΩ@VGS = -4.5V 17.5mΩ@VGS = -2.5V 26mΩ@VGS = -1.8V -11.5A -9.8A -8.1A Description These P-Channel HEXFET® Power MOSFETs from
|
Original
|
4278A
IRF7420
EIA-481
EIA-541.
EIA-541
F7101
IRF7101
IRF7420
Ultra Low rds
|
PDF
|
5S45S
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi
|
OCR Scan
|
IRFY9240CM
-200Volt,
5545S
DD24541
5S45S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: j p j -0 p p Q I j Q p Q I Provisional Data Sheet No. PD-9.432B I O R Rectifier JANTX2N6800 HEXFET POWER MOSFET JANTXV2N6800 [REF:MIL-PRF-19500/557] [GENERIC:IRFF330] N-CHANNEL 400 Volt, 1.0Q HEXFET Product Summan1 Part Number BV dss HEXFET technology is the key to International
|
OCR Scan
|
JANTX2N6800
JANTXV2N6800
MIL-PRF-19500/557]
IRFF330]
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.437B I« R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL [8 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs The HEXFET® technology is the key to International
|
OCR Scan
|
IRFG5110
IRFG5110
|
PDF
|
