S-90P0112SMA-TF
Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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2SJ357
Abstract: TC-2490 C11531E
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings unit: mm used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V.
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2SJ357
2SJ357
TC-2490
C11531E
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Untitled
Abstract: No abstract text available
Text: MP4211 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type Four L2-π-MOSV inOne MP4211 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability
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MP4211
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SJ319 L , 2SJ319(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter
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2SJ319
Hitachi DSA001651
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2SJ319
Abstract: Hitachi DSA00347
Text: 2SJ319 L , 2SJ319(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline DPAK-1
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2SJ319
Hitachi DSA00347
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2SJ319
Abstract: No abstract text available
Text: 2SJ319 L , 2SJ319 S Silicon P Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC – DC
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2SJ319
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2SJ247
Abstract: DSA003718 Hitachi 2SJ
Text: 2SJ247 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ247
O-220AB
2SJ247
DSA003718
Hitachi 2SJ
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2SJ186
Abstract: Hitachi 2SJ DSA003638
Text: 2SJ186 Silicon P-Channel MOS FET ADE-208-1184 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SJ186
ADE-208-1184
2SJ186
Hitachi 2SJ
DSA003638
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ULTRASONIC parking system
Abstract: Hitachi 2SJ Hitachi DSA001651
Text: 2SJ130 L , 2SJ130(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators
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2SJ130
D-85622
ULTRASONIC parking system
Hitachi 2SJ
Hitachi DSA001651
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJM0306JSP Silicon N / P Channel Power MOS FET High Speed Power Switching REJ03G1571-0101 Rev.1.01 May 28, 2010 Features • Two elements each of N and P channels are incorporated suitable for H-bridge circuit High density mounting
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RJM0306JSP
REJ03G1571-0101
PRSP0008DD-D
Nch9044
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2SJ350
Abstract: No abstract text available
Text: 2SJ350 Silicon P-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC
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2SJ350
220FM
2SJ350
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transistor 2sk
Abstract: S10ms 2SJ184 2SK1398 T100 T200
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device
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2SJ184
2SJ184,
transistor 2sk
S10ms
2SJ184
2SK1398
T100
T200
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2SJ180
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device
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2SJ180
2SJ180,
2SJ180
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2SJ166
Abstract: 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
Text: m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ166, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power
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2SJ166
2SJ166,
2SJ166
2SJ186
2SK1132
T100
p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
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Untitled
Abstract: No abstract text available
Text: 2SJ186 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline
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2SJ186
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fet e300
Abstract: lEI-616 n fet e300 2SJ185 2SK1399 T100 T200 diode mark T7
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ185 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING OUTLINE DIMENSIONS Unit
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2SJ185
2SJ185
fet e300
lEI-616
n fet e300
2SK1399
T100
T200
diode mark T7
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Untitled
Abstract: No abstract text available
Text: 2SJ76,2SJ77,2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting
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2SJ76
2SJ77
2SJ78,
2SJ79
2SK213,
2SK214,
2SK215,
2SK216
-220AB
2SJ76,
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Untitled
Abstract: No abstract text available
Text: 2SJ319 L , 2SJ319(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter
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2SJ319
2SJ319Ã
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Untitled
Abstract: No abstract text available
Text: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
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2SJ181
2SJ181Ã
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Untitled
Abstract: No abstract text available
Text: 2SJ317 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
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2SJ317
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2SJ179
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ179 P-CHAIMNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ179, P-channel vertical type MOS F E T , is a switching device
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2SJ179
2SJ179,
2SJ179
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d1072
Abstract: 2SJ460 MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ460 is a switching device which can be driven directly by a 2.5 V power source. PACKAGE DRAWINGS in millimeter The MOS FET has excellent switching characteristics and is suitable
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2SJ460
2SJ460
d1072
MEI-1202
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MP4211 TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE L2-?r-MOSV 4 IN 1 MP421 1 HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS FOR PRINTER HEAD PIN DRIVER AND PULSE MOTOR DRIVER FOR SOLENOID DRIVER INDUSTRIAL APPLICATIONS Unit in mm 4 V Gate Drive Available
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MP4211
MP421
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Untitled
Abstract: No abstract text available
Text: 2SJ443 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V Gate drive can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter
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2SJ443
2SJ172,
2SJ175
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