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    P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Search Results

    P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA610TA(0)-T1-AT Renesas Electronics Corporation P-Channel Mos Field Effect Transistor For High Speed Switching Visit Renesas Electronics Corporation
    UPA610TA-T1-A Renesas Electronics Corporation P-Channel Mos Field Effect Transistor For High Speed Switching, MM, /Embossed Tape Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot89-3

    Abstract: No abstract text available
    Text: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection


    Original     		PDF S-90P OT-23-3 OT-89-3 OT-23-3, OT-89-3 S-90P0112SMA S-90P0222SUA S-90P0332SUA sot89-3

    S-90P0112SMA

    Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0112SMA S-90P0112SMA OT-23-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    FET MARKING CODE

    Abstract: sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA S-90P0112SMA-TF S-90P0222SUA-TF
    Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0112SMA S-90P0112SMA OT-23-3 FET MARKING CODE sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA-TF S-90P0222SUA-TF

    S-90P0112SMA-TF

    Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF
    Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0332SUA S-90P0332SUA OT-89-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0112SMA-TF

    Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0222SUA S-90P0222SUA OT-89-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0112SMA-TF

    Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF 90P03
    Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0332SUA S-90P0332SUA OT-89-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 90P03

    S-90P0112SMA-TF

    Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0222SUA S-90P0222SUA OT-89-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0112SMA

    Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0112SMA S-90P0112SMA OT-23-3 OT-23-3 S-90P0112SMA-TF FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0222SUA

    Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0222SUA S-90P0222SUA OT-89-3 OT-89-3 S-90P0222SUA-TF 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0332SUA

    Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
    Text: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0332SUA S-90P0332SUA OT-89-3 OT-89-3 S-90P0332SUA-TF S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent

    2SJ357

    Abstract: TC-2490 C11531E
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings unit: mm used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V.


    Original     		PDF 2SJ357 2SJ357 TC-2490 C11531E

    2SJ358

    Abstract: MEI-1202
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be 5.7 ±0.1 1.0 3 0.5 ±0.1 0.5 ±0.1 2.1


    Original     		PDF 2SJ358 2SJ358 MEI-1202

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJM0404JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0338EJ0500 Rev.5.00 May 11, 2011 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting


    Original     		PDF RJM0404JSC R07DS0338EJ0500 AEC-Q101 PRSP0020DF-A HSOP-20) R07DS0338EJ0500

    RJM0404JSC

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJM0404JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0338EJ0500 Rev.5.00 May 11, 2011 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting


    Original     		PDF RJM0404JSC AEC-Q101 R07DS0338EJ0500 PRSP0020DF-A HSOP-20) RJM0404JSC

    RJM0603JSC

    Abstract: PRSP0020DF-A
    Text: Preliminary Datasheet RJM0603JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0339EJ0501 Rev.5.01 Jul 22, 2011 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting


    Original     		PDF RJM0603JSC R07DS0339EJ0501 AEC-Q101 PRSP0020DF-A HSOP-20) R07DS0339EJ0501 RJM0603JSC PRSP0020DF-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJM0407JSC 40 V - 20 A - N/P Channel Power MOS FET 6 in 1 Type R07DS0368EJ0100 High Speed Power Switching Rev.1.00 Sep 20, 2012 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting


    Original     		PDF RJM0407JSC R07DS0368EJ0100 AEC-Q101 PRSP0020DF-A HSOP-20)

    2SJ356

    Abstract: C10535E MEI-1202 marking pr p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 4.5 ±0.1 IC operating at 5 V.


    Original     		PDF 2SJ356 2SJ356 C10535E MEI-1202 marking pr p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

    2sj353 transistor

    Abstract: 2SJ353 C10535E MEI-1202
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 7.0 MAX. This product has a low ON resistance and superb switching


    Original     		PDF 2SJ353 2SJ353 2sj353 transistor C10535E MEI-1202

    transistor 2sk

    Abstract: S10ms 2SJ184 2SK1398 T100 T200
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device


    OCR Scan     		PDF 2SJ184 2SJ184, transistor 2sk S10ms 2SJ184 2SK1398 T100 T200

    2SJ180

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device


    OCR Scan     		PDF 2SJ180 2SJ180, 2SJ180

    2SJ166

    Abstract: 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
    Text: m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ166, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power


    OCR Scan     		PDF 2SJ166 2SJ166, 2SJ166 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking

    2SJ180

    Abstract: No abstract text available
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V power OUTLINE DIMENSIONS U n it: mm source.


    OCR Scan     		PDF 2SJ180 2SJ180, 2SJ180

    S10ms

    Abstract: 2SJ184 2SK1398 T100 T200 TC-7645A
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS U n it: mm 2.0 ± 0.2 4.0±0.2 o -H o 4 -0 .5 0 FEATURES Ft IO ö 0.45 w hich can be driven by 2.5 V power supply.


    OCR Scan     		PDF 2SJ184 2SJ184, S10ms 2SJ184 2SK1398 T100 T200 TC-7645A

    NEC Zener diode product List

    Abstract: 2SJ178 2sj178 transistor
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD-EFFECT TRANSISTOR 2SJ178 P-CHANIMEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ178 is a p-channel vertical type MOS FET switching device


    OCR Scan     		PDF 2SJ178 2SJ178 NEC Zener diode product List 2sj178 transistor