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    P-CHANNEL MOSFET 40V Search Results

    P-CHANNEL MOSFET 40V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RBA160N04AHPF-4UA01#GB0 Renesas Electronics Corporation 40V-160A N-channel Power MOS FET, MP-25ZU, /Embossed Tape Visit Renesas Electronics Corporation
    RBA250N04AHPF-4UA01#GB0 Renesas Electronics Corporation 40V–250A N-channel Power MOS FET Visit Renesas Electronics Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOSFET 40V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF95

    Abstract: IRF9510 p channel mosfet 100v TA17541
    Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET


    Original     		PDF IRF95 O220AB IRF9510 IRF95 IRF9510 p channel mosfet 100v TA17541

    CXDM4060P

    Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
    Text: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET


    Original     		PDF CXDM4060P OT-89 CXDM4060P OT-89 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet

    CMLM8205

    Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
    Text: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET


    Original     		PDF CMLM8205 280mA, 500mA OT-563 CMLM8205 OT-563 100mA 21x9x9 27x9x17 20x18x5 PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A

    3N163

    Abstract: TO72 package
    Text: 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF 3N163 3N163 375mW TO72 package

    Untitled

    Abstract: No abstract text available
    Text: LS3N163 P-CHANNEL MOSFET The LS3N163 is an enhancement mode P-Channel Mosfet The LS3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF LS3N163 LS3N163 375mW

    UTT20P04

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT20P04 Power MOSFET -40V, -20A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT20P04 is a P-channel Power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original     		PDF UTT20P04 UTT20P04 UTT20P04L-TN3-R UTT20P04G-TN3-R O-252 QW-R502-774

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P04 Power MOSFET -40V, -60A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


    Original     		PDF UTT50P04 UTT50P04 O-252 UTT50P04L-TN3-R UTT50P04G-TN3-R QW-R502-598

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT40P04 Power MOSFET 40V, 50A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT40P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high


    Original     		PDF UTT40P04 UTT40P04 UTT40P04L-TA3-T UTT40P04G-TA3-T QW-R502-616

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT65P04 Power MOSFET 65A, 40V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT65P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high


    Original     		PDF UTT65P04 UTT65P04 UTT65P04L-TA3-T UTT65P04G-TA3-T O-220 QW-R502-615

    Untitled

    Abstract: No abstract text available
    Text: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF FDS4675

    FDD4141

    Abstract: No abstract text available
    Text: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDD4141 -PA52 FDD4141

    SI4563DY

    Abstract: No abstract text available
    Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested


    Original     		PDF Si4563DY Si4563DY-T1--E3 08-Apr-05

    FDD4141

    Abstract: Fairchild FDD4141
    Text: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDD4141 -PA52 FDD4141 Fairchild FDD4141

    Untitled

    Abstract: No abstract text available
    Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDD4141

    FDS4141

    Abstract: No abstract text available
    Text: FDS4141 P-Channel PowerTrench MOSFET -40V, -10.8A, 13.0mΩ Features General Description „ Max rDS on = 13.0mΩ at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDS4141 FDS4141

    F011

    Abstract: F63TNR F852 FDS4675 L86Z
    Text: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF FDS4675 F011 F63TNR F852 FDS4675 L86Z

    Untitled

    Abstract: No abstract text available
    Text: FDS4141 P-Channel PowerTrench MOSFET -40V, -10.8A, 13.0mΩ Features General Description ̈ Max rDS on = 13.0mΩ at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDS4141 FDS4141

    Untitled

    Abstract: No abstract text available
    Text: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF FDS4675

    Untitled

    Abstract: No abstract text available
    Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDD4141

    list of P channel power mosfet

    Abstract: si4563 SI4563DY
    Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested


    Original     		PDF Si4563DY Si4563DY-T1--E3 52243--Rev. 24-Oct-05 list of P channel power mosfet si4563

    FDS4675

    Abstract: No abstract text available
    Text: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF FDS4675 FDS4675

    FDD4685

    Abstract: 100A inverter mosfet
    Text: FDD4685 40V P-Channel PowerTrench MOSFET –40V, –32A, 27mΩ Features tm General Description „ Max rDS on = 27mΩ at VGS = –10V, ID = –8.4A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to


    Original     		PDF FDD4685 FDD4685 100A inverter mosfet

    Untitled

    Abstract: No abstract text available
    Text: FQD5P20 / FQU5P20 P-Channel QFET MOSFET -200 V, -3.7 A, 1.4 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD5P20 FQU5P20

    FQT5P10

    Abstract: No abstract text available
    Text: FQT5P10 P-Channel QFET MOSFET -100 V, -1.0 A, 1.05 Ω Features Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQT5P10 FQT5P10 OT-223