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    P-CHANNEL MOSFET 500V Search Results

    P-CHANNEL MOSFET 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOSFET 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50-P Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50-P is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original     		PDF 5N50-P 5N50-P QW-R205-027

    OM12P10SA

    Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
    Text: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •


    Original     		PDF OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM2P50ST OM8P25SA

    AUIRF7319Q

    Abstract: 96364B 8763A
    Text: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET


    Original     		PDF 96364B AUIRF7319Q AUIRF7319Q 96364B 8763A

    C1550

    Abstract: p-channel 250V power mosfet
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing


    Original     		PDF TC1550 MS-012, DSFP-TC1550 A012508 C1550 p-channel 250V power mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET


    Original     		PDF 96364B AUIRF7319Q

    620 tg diode

    Abstract: No abstract text available
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing an advanced


    Original     		PDF TC1550 TC1550 DSFP-TC1550 A091608 620 tg diode

    circuit diagram of mosfet based smps power supply

    Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
    Text: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The


    Original     		PDF new/fdc6901l FDC6901L FDJ129P Power247TM, circuit diagram of mosfet based smps power supply FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel

    p-channel 250V power mosfet

    Abstract: C1550 TC1550 TC1550TG-G P-channel mosfet 500V
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing an advanced


    Original     		PDF TC1550 TC1550 DSFP-TC1550 A091608 p-channel 250V power mosfet C1550 TC1550TG-G P-channel mosfet 500V

    Dn5dp

    Abstract: No abstract text available
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing an advanced


    Original     		PDF TC1550 MS-012, F071408. DSFP-TC1550 A082108 Dn5dp

    400v p-channel mosfet

    Abstract: No abstract text available
    Text: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3P50TM -500V, 400v p-channel mosfet

    FQD3P50TM_F085

    Abstract: No abstract text available
    Text: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3P50TM -500V, FQD3P50TM_F085

    Piezoelectric 1Mhz

    Abstract: p-channel 250V power mosfet P-channel Dual MOSFET VGS -25V high voltage piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G 10nF 250v P-channel MOSFET VGS -25V
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550TG-G consists of a high voltage Nchannel and P-channel MOSFET in an SO-8 package. These are enhancement-mode normally-off transistors


    Original     		PDF TC1550 TC1550TG-G 27BSC DSFP-TC1550 NR011707 Piezoelectric 1Mhz p-channel 250V power mosfet P-channel Dual MOSFET VGS -25V high voltage piezoelectric transducer 27BSC MD1210K6 TC1550 10nF 250v P-channel MOSFET VGS -25V

    FQD1P50

    Abstract: FQU1P50
    Text: QFET FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1P50 FQU1P50 -500V, FQU1P50

    FQD1P50

    Abstract: FQU1P50
    Text: FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1P50 FQU1P50 -500V, FQU1P50

    Piezoelectric 1Mhz

    Abstract: piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G
    Text: TC1550 Initial Release N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550TG-G consists of a high voltage Nchannel and P-channel MOSFET in an SO-8 package. These are enhancement-mode normally-off transistors


    Original     		PDF TC1550 TC1550TG-G 27BSC DSFP-TC1550 NR092806 Piezoelectric 1Mhz piezoelectric transducer 27BSC MD1210K6 TC1550

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB1P50 FQI1P50 -500V, FQB1P50/FQI1P50

    FQB1P50

    Abstract: FQI1P50
    Text: QFET TM FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB1P50 FQI1P50 -500V, FQI1P50

    FQD1P50

    Abstract: FQU1P50
    Text: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD1P50 FQU1P50 -500V, FQU1P50

    P-CHANNEL 400V 15A

    Abstract: fqb1p50
    Text: QFET TM FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB1P50 FQI1P50 -500V, FQI1P50TU O-262 P-CHANNEL 400V 15A

    fqu1p50

    Abstract: No abstract text available
    Text: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD1P50 FQU1P50 -500V, FQU1P50TU O-251 FQU1P50

    OM8P20A

    Abstract: OM2P50A 3ssr
    Text: O M NI RE L CORP H3£ ]> t>7a^0?3 H• 00DGS24 OMNI OM2P50A OM8P2QA POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-254 PACKAGE ^ 200V/500V, Up To 8 Amp; P-Channel MOSFET^ FEATURES D O • Isolated Hermetic Metal Package • P-Channel • Fast Switching, Low Drive Current


    OCR Scan     		PDF 00DGS24 O-254 00V/500V, OM2P50A OM8P20A 3ssr

    QM803

    Abstract: No abstract text available
    Text: OMNI R E L .CÖRP IME 0 I 1,70^073 00005^2 T I OM7P50A OM8P2QA POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-254 PACKAGE T ^ w êssêsiêu 200V/500V, UpTo 8, Amp*, P-Channel MOSFET v - -‘ A - - -* ^ ~ v 'J } J, FEATURES Isolated Hermetic Metal Package P-Channel


    OCR Scan     		PDF OM7P50A O-254 00V/500V, QM803 Z7I-005 QM803

    Untitled

    Abstract: No abstract text available
    Text: bVfl'îGTa 0DDGS24 4 • O M N I OMNIREL CORP M3E D OM2P50A OM8P2QA POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-254 PACKAGE 200V/500V, Up To 8 Am ^ P-Channel MOSFET^ FEATURES D • Isolated Hermetic Metal Package Q • P-Channel • • • • Fast Switching, Low Drive Current


    OCR Scan     		PDF 0DDGS24 OM2P50A O-254 00V/500V,

    audio Amp. mosfet 1000 watt

    Abstract: OM8P20A QM803 OM7P50A
    Text: OMNI REL .CÖRP IME 0 I 1,70^073 00005^2 T I OM7P50A OM8P2QA POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-254 PACKAGE T ^ wêssêsiêu 200V/500V, UpTo 8, Amp*, P-Channel MOSFET v- -‘ A - - -* ^ ~ v'J} J, FEATURES Isolated Hermetic Metal Package P-Channel Fast Switching, Low Drive Current


    OCR Scan     		PDF OM7P50A O-254 00V/500V, QM803 audio Amp. mosfet 1000 watt OM8P20A QM803