Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3P06 Preliminary Power MOSFET 2.2A, 60V D-S P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.
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UT3P06
UT3P06
UT3P06L-AG6-R
UT3P06G-AG6-R
OT-26
QW-R502-673
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2P06 Power MOSFET -2A, 60V D-S P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.
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UT2P06
UT2P06
UT2P06G-AE3-R
OT-23
2P06G
QW-R502-B01
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3P06 Power MOSFET 3A, 60V D-S P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.
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UT3P06
UT3P06
UT3P06L-AE3-R
UT3P06G-AE3-R
OT-23
UT3P06L-AG6-R
UT3P06G-AG6-R
OT-26
QW-R502-673
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PDF
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MCH3314
Abstract: SCH2805
Text: SCH2805 Ordering number : ENN7760 SCH2805 Features MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
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SCH2805
ENN7760
MCH3314)
SB0105)
MCH3314
SCH2805
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ut4421g
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT4421 Preliminary Power MOSFET -6.2A, -60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4421 is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and high switching speed.
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UT4421
UT4421
UT4421G-S08-R
QW-R208-051
ut4421g
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PDF
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Untitled
Abstract: No abstract text available
Text: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
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SCH2805
ENN7760
MCH3314)
SB0105)
SCH2805/D
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2P06 Power MOSFET -1.4A, 60V D-S P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.
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UT2P06
UT2P06
UT2P06L-AE3-R
UT2P06G-AE3-R
OT-23
QW-R502-B01
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT18P06 Power MOSFET 18.3A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can
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UTT18P06
UTT18P06
O-252
UTT18P06L-TN3-R
UTT18P06G-TN3-R
UTT18P06L-TN3-T
UTT18P06G-TN3-T
QW-R502-713
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT15P06 Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can
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UTT15P06
UTT15P06
UTT15P06L-TA3-T
UTT15P06G-TA3-T
UTT15P06L-TF3-T
UTT15P06G-TF3-T
UTT15P06L-TM3-T
UTT15P06G-TM3-T
UTT15P06L-TN3-R
UTT15P06G-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT15P06 Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can
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UTT15P06
UTT15P06
UTT15P06L-TA3-T
UTT15P06G-TA3-T
UTT15P06L-TM3-T
UTT15P06G-TM3-T
UTT15P06L-TN3-T
UTT15P06G-TN3-T
UTT15P06L-TN3-R
UTT15P06G-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT18P06 Power MOSFET 18.3A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can
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UTT18P06
UTT18P06
UTT18P06L-TN3-T
UTT18P06G-TN3-T
UTT18P06L-TN3-R
UTT18P06G-TN3-R
O-252
QW-R502-713.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT15P06 Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can
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UTT15P06
UTT15P06
O-252
UTT15P06L-TN3-R
UTT15P06G-TN3-R
UTT15P06L-TN3-T
UTT15P06G-TN3-T
QW-R502-733
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W359
Abstract: FW359 75493
Text: Ordering number : ENN7549 FW359 N-Channel and P-Channel Silicon MOSFETs FW359 Ultrahigh-Speed Switching Applications Features The FW359 in corporates a N-channel MOSFET unit : mm and a P-channel MOSFET that feature 2129 low ON-resistance, ultrahigh-speed switching,
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ENN7549
FW359
FW359
FW359]
W359
75493
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p-channel Mosfet 110A
Abstract: UTT120P06
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also
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UTT120P06
UTT120P06
O-220
UTT120P06L-TA3-T
UTT120P06G-TA3-T
QW-R502-728
p-channel Mosfet 110A
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FDC5614P
Abstract: No abstract text available
Text: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications
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FDC5614P
FDC5614P
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Untitled
Abstract: No abstract text available
Text: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications
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FDC5614P
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TH 2190 mosfet
Abstract: UTT30P06
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P06 Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
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UTT30P06
UTT30P06
O-220
UTT30P06L-TA3-T
UTT30P06G-TA3-T
QW-R502-622
TH 2190 mosfet
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marking 564
Abstract: FDC5614P
Text: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications
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FDC5614P
FDC5614P
NF073
marking 564
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OM12P10SA
Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
Text: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •
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OM23P06ST
OM20P10ST
OM12P10ST
OM8P20ST
OM8P25ST
OM2P50ST
OM23P06SA
OM20P10SA
OM12P10SA
OM8P20SA
OM2P50ST
OM8P25SA
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P06 Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
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UTT30P06
UTT30P06
UTT30P06L-TA3-T
UTT30P06G-TA3-T
QW-R502-622
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PDF
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UTT80P06
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80P06 Power MOSFET 80A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT80P06
UTT80P06
O-220
UTT80P06L-TA3-T
UTT80P06G-TA3-T
QW-R502-672
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PDF
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Untitled
Abstract: No abstract text available
Text: FW356 FW356 Ordering number : ENN7743 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • For motor drives, inverters. The FW356 in corporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
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FW356
ENN7743
FW356
FW356/D
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ECH8619
Abstract: ech8 sanyo
Text: ECH8619 Ordering number : ENA0658 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8619 General-Purpose Switching Device Applications Features • • The ECH8619 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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ECH8619
ENA0658
ECH8619
A0658-6/6
ech8 sanyo
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