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    P-CHANNEL MOSFET SOT23 Search Results

    P-CHANNEL MOSFET SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOSFET SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    utc 324

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2305 UT2305 UT2305L-AE2-R UT2305G-AE2-R UT2305L-AE3-R UT2305G-AE3-R OT-23-3 OT-23 QW-R502-133 utc 324

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2305 UT2305 UT2305G-AE2-R UT2305G-AE3-R UT2305G-AG3-R OT-23-3 OT-23 OT-26 OT-23 QW-R502-133

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2305 UT2305 UT2305L-AE2-R UT2305G-AE2-R UT2305L-AE3-R UT2305G-AE3-R UT2305L-AG3-R UT2305G-AG3-R OT-23-3 OT-23

    SOT-23 MOSFET P-CHANNEL a1 1- mark

    Abstract: L21e
    Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener


    Original     		PDF LP1030D LP1030D DSFP-LP1030D NR011613 SOT-23 MOSFET P-CHANNEL a1 1- mark L21e

    Untitled

    Abstract: No abstract text available
    Text: UM8516 20V P-Channel Power MOSFET UM8516 SOT23-6 General Description The UM8516 is a low threshold P-channel MOSFET with gate to source TVS protection, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device


    Original     		PDF UM8516 UM8516 OT23-6 OT23-6

    ZXMP2120FFTA

    Abstract: No abstract text available
    Text: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,


    Original     		PDF ZXMP2120FF OT23F D-81541 ZXMP2120FFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,


    Original     		PDF ZXMP2120FF OT23F 48mbH D-81541

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2301 UT2301 UT2301L-AE2-R UT2301G-AE2-R UT2301L-AE3-R UT2301G-AE3-R OT-23-3 OT-23 QW-R502-118

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2301 UT2301 UT2301L-AE2-R UT2301G-AE2-R UT2301L-AE3-R UT2301G-AE3-R OT-23-3 OT-23 QW-R502-118

    UT2301G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2301 UT2301 UT2301L-AE2-R UT2301G-AE2-R UT2301L-AE3-R UT2301G-AE3-R OT-23-3 OT-23 QW-R502-118 UT2301G

    23AG

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET Y2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.


    Original     		PDF UT2301 UT2301 UT2301G-AE2-R UT2301G-AE3-R OT-23-3 OT-23 QW-R502-118 23AG

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV65XP O-236AB)

    placeholder for manufacturing site code

    Abstract: No abstract text available
    Text: PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV50UPE O-236AB) placeholder for manufacturing site code

    TRANSISTOR SMD MARKING CODE QR

    Abstract: 2PMV65XP
    Text: PMV65XP 20 V, single P-channel Trench MOSFET 21 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV65XP O-236AB) TRANSISTOR SMD MARKING CODE QR 2PMV65XP

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV48XPA O-236AB) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV50XP 20 V, P-channel Trench MOSFET 19 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV50XP O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF BSH205G2 O-236AB) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV75UP 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV75UP O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV27UPE 20 V, P-channel Trench MOSFET 15 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV27UPE O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV65XPE O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 March 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV250EPEA O-236AB) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV250EPEA O-236AB) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV65XPEA O-236AB) AEC-Q101

    PMV65XP

    Abstract: No abstract text available
    Text: SO T2 3 PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV65XP O-236AB) PMV65XP