nanotron
Abstract: Nanotron Technologies Chirp modulation Nanotron Technologies GmbH MC9S08GT60 ENW59607NA1 PAN5460
Text: P i Cut the Cable TM ISM RF-Modem PAN5460 OUTLINES - ENW59607NA1 The PAN5460 module operates in the worldwide license - free ISM band at 2.4 GHz and ensures due to its unique chirp transmission technology a reliable communication, extremely low power consumption and high robustness even in harsh
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PAN5460
ENW59607NA1
PAN5460
EN300328,
EN301489
EN60950.
250kbps
PAN5461)
nanotron
Nanotron Technologies
Chirp modulation
Nanotron Technologies GmbH
MC9S08GT60
ENW59607NA1
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RFBLN
Abstract: LTCC GHz
Text: Approval sheet RFBLN 2012 0805 Series – RoHS Compliance MULTILAYER CERAMIC BALUN TRANSFORMER Halogens Free Product 5 GHz ISM Band Working Frequency P/N:RFBLN2012090K1T *Contents in this sheet are subject to change without prior notice Page 1 of 7 ASC_RFBLN2012090K1T_V07
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RFBLN2012090K1T
RFBLN2012090K1T
RFBLN
LTCC GHz
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Micron Q-Flash memory
Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)
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128Mb,
MT28F128J3,
MT28F640J3,
MT28F320J3
56-Pin
x8/x16
128KB
128Mb)
Micron Q-Flash memory
FW501
Micron data sheet Q-Flash
sample code read and write flash memory
FW201
FW207
MT28F128J3
MT28F128J3FS-15
MT28F320J3
MT28F320J3FS-11
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)
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128Mb,
x8/x16
128KB
128Mb)
150ns/25ns
120ns/25ns
100ns/25ns
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fw209
Abstract: No abstract text available
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)
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128Mb,
x8/x16
128KB
128Mb)
150ns/25ns
120ns/25ns
110ns/25ns
fw209
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)
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128Mb,
x8/x16
128KB
128Mb)
150ns/25ns
120ns/25ns
100ns/25ns
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 64Mb, 32Mb SIRUSFLASH MEMORY SIRUSFLASHTM MEMORY MT28F640J3, MT28F320J3 FEATURES PIN ASSIGNMENT Top View • x8/x16 organization • Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb) • VCC, VCCQ, and VPEN voltages:
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x8/x16
128KB
120ns/25ns
100ns/25ns
MT28F640J3
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MT28F256J3
Abstract: MT28F256 Micron Q-Flash memory intel strataflash j3
Text: 256Mb, 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F256J3‡, MT28F128J3, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I Memory Organization • x8/x16 • Two hundred fifty-six 128KB erase blocks 256Mb • One hundred twenty-eight 128KB erase blocks
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256Mb,
128Mb,
x8/x16
128KB
256Mb)
128Mb)
120ns/25ns
MT28F256J3
MT28F256
Micron Q-Flash memory
intel strataflash j3
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Untitled
Abstract: No abstract text available
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 TM Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I x8/x16 organization One hundred twenty-eight 128KB erase blocks 128Mb • Sixty-four 128KB erase blocks (64Mb) • Thirty-two 128KB erase blocks (32Mb)
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128Mb,
MT28F128J3,
MT28F640J3,
MT28F320J3
x8/x16
128KB
128Mb)
150ns/25ns
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FW406
Abstract: FW509 FW407 MT28F128J3FS-12 MET MT28F640J3RG-12 MT28F128J3RG-15ET flash fw206 FW206 MT28F128J3RG-15 FW510
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY TM MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)
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PDF
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128Mb,
MT28F128J3,
MT28F640J3,
MT28F320J3
x8/x16
128KB
128Mb)
150ns/25ns
FW406
FW509
FW407
MT28F128J3FS-12 MET
MT28F640J3RG-12
MT28F128J3RG-15ET
flash fw206
FW206
MT28F128J3RG-15
FW510
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BAND PASS FILTER
Abstract: RFBPF LTCC GHz multilayer GHz LTCC BPF
Text: Approval sheet RFBPF 2520 1008 Series – RoHS Compliance MULTILAYER CERAMIC BAND PASS FILTER Halogens Free Product 2.4 GHz ISM Band Working Frequency P/N: RFBPF2520100A5T *Contents in this sheet are subject to change without prior notice. Page 1 of 7 ASC_RFBPF2520100A5T_V04
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RFBPF2520100A5T
RFBPF2520100A5T
BAND PASS FILTER
RFBPF
LTCC GHz
multilayer GHz
LTCC BPF
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BAND PASS FILTER
Abstract: RFBPF LTCC GHz
Text: Approval sheet RFBPF 2520 1008 Series – RoHS Compliance MULTILAYER CERAMIC BAND PASS FILTER Halogens Free Product 2.4 GHz ISM Band Working Frequency P/N: RFBPF2520100A6T *Contents in this sheet are subject to change without prior notice. Page 1 of 7 ASC_RFBPF2520100A6T_V04
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RFBPF2520100A6T
RFBPF2520100A6T
BAND PASS FILTER
RFBPF
LTCC GHz
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BALUN
Abstract: RGBLN
Text: Approval sheet RGBLN 2012 0805 Series – RoHS Compliance MULTILAYER CERAMIC BALUN TRANSFORMER Halogens Free Product 2.4 GHz ISM Band Working Frequency P/N:RGBLN2012080A5T *Contents in this sheet are subject to change without prior notice. Page 1 of 7 ASC_RGBLN2012080A5T_V05
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RGBLN2012080A5T
RGBLN2012080A5T
BALUN
RGBLN
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RGBLN2012080A5T
Abstract: RGBLN
Text: Approval sheet RGBLN 2012 0805 Pb free Series – RoHS Compliance MULTILAYER CERAMIC BALUN TRANSFORMER Halogens Free Product 2.4 GHz ISM Band Working Frequency P/N: RGBLN2012080A5T series *Contents in this sheet are subject to change without prior notice.
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RGBLN2012080A5T
RGBLN
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 64Mb: x16, x32 SYNCFLASH MEMORY SYNCFLASH MEMORY MT28S4M16B1LL – 1 Meg x 16 x 4 banks MT28S2M32B1LL – 512K x 32 x 4 banks FEATURES PIN ASSIGNMENT Top View 90-Ball FBGA – 2 Meg x 32 • 125 MHz SDRAM-compatible read timing • Fully synchronous; all signals registered on
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MT28S4M16B1LL
MT28S2M32B1LL
90-Ball
MT28S4M16B1LL
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Untitled
Abstract: No abstract text available
Text: RF5263 Preliminary 3.3V TO 5.0V, 2.5GHz LINEAR POWER AMPLIFIER Pb-Free Product Typical Applications • 802.11b/g/n Access Points • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery-Powered Equipment • 2.4GHz ISM Band Applications
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RF5263
11b/g/n
RF5263
11g/n
16-pin,
2400MHz
2500MHz
RF5263PCBA-41X
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Untitled
Abstract: No abstract text available
Text: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. Features
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RF2126
RF2126High
400MHz
2700MHz
DS130517
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fq40
Abstract: No abstract text available
Text: ADVANCE‡ 64Mb: x16, x32 SYNCFLASH MEMORY SYNCFLASH MEMORY MT28S4M16B1LL – 1 Meg x 16 x 4 banks MT28S2M32B1LL – 512K x 32 x 4 banks FEATURES PIN ASSIGNMENT Top View 90-Ball FBGA – 2 Meg x 32 • 125 MHz SDRAM-compatible read timing • Fully synchronous; all signals registered on
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MT28S4M16B1LL
fq40
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fQ40
Abstract: No abstract text available
Text: ADVANCE‡ 64Mb: x16, x32 SYNCFLASH MEMORY SYNCFLASH MEMORY MT28S4M16B1LL – 1 Meg x 16 x 4 banks MT28S2M32B1LL – 512K x 32 x 4 banks FEATURES PIN ASSIGNMENT Top View 90-Ball FBGA – 2 Meg x 32 • 125 MHz SDRAM-compatible read timing • Fully synchronous; all signals registered on
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MT28S4M16B1LL
fQ40
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STQ-2016
Abstract: 0603 footprint
Text: STQ-2016 Z STQ-2016(Z) 700MHz to 2500MHz Direct Quadrature Modulator 700MHz to 2500MHz DIRECT QUADRATURE MODULATOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm Product Description Features RFMD’s STQ-2016 is a direct quadrature modulator targeted for use in a wide range of communications systems, including cellular/PCS, CDMA2000, UMTS, and ISM datacom. This device
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STQ-2016
700MHz
2500MHz
2500MHz
16-Pin,
CDMA2000,
0603 footprint
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2.4GHz wireless transceiver with gfsk
Abstract: a7121 synthesizer 2400Mhz 2.4GHz rf wireless for communication 2400MHz-2484MHz 2.4ghz synthesizer 2.4GHZ microcontroller 2400MHZ synthesizer AMIC
Text: A7121 Preliminary 2.4GHz GFSK Transceiver Typical Applications Wireless digital audio Wireless Mouse and Keyboard 2.4GHz ISM Band Communication System Wireless game pad Wireless toy General Description A7121 is a monolithic CMOS integrated circuit for wireless
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A7121
A7121
32-lead
2400MHz
2484MHz
200us
2.4GHz wireless transceiver with gfsk
synthesizer 2400Mhz
2.4GHz rf wireless for communication
2400MHz-2484MHz
2.4ghz synthesizer
2.4GHZ microcontroller
2400MHZ synthesizer
AMIC
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Untitled
Abstract: No abstract text available
Text: SSD04N60SL 4A , 600V , RDS ON 2.4Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252 DESCRIPTION The SSD04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSD04N60SL
O-252
SSD04N60SL
17-Jul-2013
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Untitled
Abstract: No abstract text available
Text: SSD04N65SL 4A , 650V , RDS ON 2.7Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSD04N65SL
O-252
SSD04N65SL
O-252
17-Jul-2013
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Untitled
Abstract: No abstract text available
Text: SID02N65SL 2A , 650V , RDS ON 4.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-251 DESCRIPTION The SID02N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SID02N65SL
O-251
SID02N65SL
19-Dec
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