P1086
Abstract: P1087
Text: P1086/1087 Siliconix PĆChannel JFETs Product Summary Part Number VGS off Max (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) P1086 10 75 -10 25 P1087 5 150 -10 30 Features Benefits Applications D D D D D D D D D D D D D D D Low OnĆResistance: P1086 <75 W
|
Original
|
PDF
|
P1086/1087
P1086
P1087
P1086
P1086/1087
P-37404--Rev.
P1087
|
"P-Channel JFETs"
Abstract: P1086 P1086 P1087 Siliconix P-Channel JFETs SST111 P1087
Text: P1086/1087 P-Channel JFETs Product Summary Part Number VGS off Max (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) P1086 P1087 10 75 –10 25 5 150 –10 30 Features Benefits Applications D D D D D D D D D D D D D D D Low On-Resistance: P1086 <75 W Fast Switching—tON: 25 ns
|
Original
|
PDF
|
P1086/1087
P1086
P1087
P1086
P1086/1087
P-37404--Rev.
04-Jul-94
"P-Channel JFETs"
P1086 P1087
Siliconix P-Channel JFETs
SST111
P1087
|
p1086
Abstract: P1087
Text: P1086/1087 P-Channel JFETs Product Summary Part Number VGS off Max (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) P1086 10 75 –10 25 P1087 5 150 –10 30 Features Benefits Applications D D D D D D D D D D D D D D D Low On-Resistance: P1086 <75 W Fast Switching—tON: 25 ns
|
Original
|
PDF
|
P1086/1087
P1086
P1087
P1086/1087
P-37404--Rev.
04-Jul-94
P1086
P1087
|
P1087
Abstract: P1086
Text: P1086/1087 P-Channel JFETs Product Summary Part Number VGS off Max (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) P1086 10 75 –10 25 P1087 5 150 –10 30 Features Benefits Applications D D D D D D D D D D D D D D D Low On-Resistance: P1086 <75 W Fast Switching—tON: 25 ns
|
Original
|
PDF
|
P1086/1087
P1086
P1087
P1086
P1086/1087
P-37404--Rev.
04-Jul-94
P1087
|
P1087
Abstract: P1086 P1086 P1087 PJ99 SMPP1086 SMPP1087 on75150
Text: Databook.fxp 1/13/99 2:09 PM Page B-63 B-63 01/99 P1086, P1087 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
|
Original
|
PDF
|
P1086,
P1087
P1086
P1086)
P1087)
226AA
SMPP1086,
SMPP1087
P1087
P1086
P1086 P1087
PJ99
SMPP1086
SMPP1087
on75150
|
2sj44
Abstract: J177 equivalent PJ99 j177 equivalent transistor
Text: Databook.fxp 1/13/99 2:09 PM Page F-30 F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
|
Original
|
PDF
|
2N3993,
2N3993A
2N3994,
2N3994A
2N5114,
2N5115
2N5116
2SJ44
IFN5114,
IFN5115
J177 equivalent
PJ99
j177 equivalent transistor
|
p1086
Abstract: p1087 "P-Channel JFETs" P1087 equivalent
Text: Temic P1086/1087 S e m i c o n d u c t o r s P-Channel JFETs Product Summary P a rt N um ber V GS o f f M a x ( V ) rj>s(on) M a x ( Q ) ÏJXofT) T y p ( p A ) Io n T y p ( n s ) P1086 10 75 -1 0 25 P1087 5 150 -1 0 30 Features Low On-Resistance: P1086 <75 Q
|
OCR Scan
|
PDF
|
P1086/1087
P1086
P1087
P1086/1087
P-37404--
04-Jul-94
P1086
P1087
"P-Channel JFETs"
P1087 equivalent
|
p1087e
Abstract: P1086E J174 2N5114-16 P1086
Text: P1086 P1087 P1086-18 P1087-18 p-channel JFETs designed f o r . • H Siliconix Perform ance Curves PS See Section 5 • Analog Switches Choppers Commutators B EN EFITS • Low Insertion Loss R DS on = 7 5 i i Maximum (P1086E) • No Offset or Error Voltages Generated
|
OCR Scan
|
PDF
|
|
p1087e
Abstract: P1086E P1087 P1086 P1086 P1087 910U P-Channel JFETs
Text: P1086 P1087 P1086-18 P1087-18 p-channel JFETs designed fo r . • H Siliconix Performance Curves PS See Section 5 • Analog Switches Choppers Commutators B E N E F IT S • Low Insertion Loss R DS on = 7 5 i i Maximum (P1086E) • No Offset or Error Voltages Generated
|
OCR Scan
|
PDF
|
P1086E)
P1087E)
P1086
p1087e
P1086E
P1087
P1086 P1087
910U
P-Channel JFETs
|
P1087
Abstract: P1086 P1087 p1086
Text: Tem ic P1086/1087 Siliconix P-Channel JFETs Product Summary P a rt N um ber r DS on M ax (Ö ) iD(ofl) i y p (pA) ‘ o n Typ (ns) P1086 10 75 -1 0 25 P1087 5 150 -1 0 30 v GS(ofl) M a x (V) ¡s Features Benefits Applications • • • • • • • •
|
OCR Scan
|
PDF
|
P1086/1087
P1086
P1087
P1086/1087
P-37404--
P1086 P1087
|
"P-Channel JFETs"
Abstract: 2N5116
Text: This JFET Transistors Material f P-Channel JFETs National Semiconductor Copyrighted A m Switches BV qss Type No. Case Style By Its 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 Respective J174 J175 J176 J177 P1086 P1087 TO-92 TO-92 TO-92
|
OCR Scan
|
PDF
|
tSD113D
T-39-01
"P-Channel JFETs"
2N5116
|
2N3820 NATIONAL SEMICONDUCTOR
Abstract: No abstract text available
Text: D iscrete POW ER & Signal Technologies National Semiconductor P-Channel JFETs Switches / Choppers b v gss Device No. Case Style ’ess BVGDo nA @ VD0 (V)@ lG Max (V) Min (fiA) J174 J175 J176 TO-92 TO-92 TO-92 30 30 30 1 1 1 J177 TO-92 30 1 P1086 P1087 TO-92 30
|
OCR Scan
|
PDF
|
P1086
P1087
2N3820 NATIONAL SEMICONDUCTOR
|
P1086
Abstract: P1087
Text: B 63 9 -9 7 P1086, PI 087 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • ANALOG SWITCHES Absolute maximum ratings at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 30 V 50 mA Continuous Device Power Dissipation
|
OCR Scan
|
PDF
|
P1086,
P1087
P1086
T0-226AA
GGG07Ã
P1086
P1087
|
SMPJ177
Abstract: SMP3330 PJ99 P1086
Text: 8-94 F 10 Small Outline Surface Mount Package Devices P-C H A N N E L SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Device Type V g S(OFF) • g ss bvg ss Limits Min (V) m Max @Vgs Min (nA) (V) (V) @IG Id s s Conditions Max Vds b Min Max @VDS (V) (V) (nA)
|
OCR Scan
|
PDF
|
|
|
|
MMBFJ174
Abstract: MMBF5115 p1086 MMBFJ177
Text: h&E D • b 5 D 1 1 3 D □OB'lSDl TDS ■ NSC5 P Channel V p @ V DSlD Device R BVgss V Min (V) (V) Min Max m d S( oii ) (ß ) Min @ ID Ciss Crss ton toff (PF) Max (PF) Max (ns) Max (ns) Package Max (mA) 2N5018 30 10 -15 1000 75 1 45 10 35 65 TO-18(11 )
|
OCR Scan
|
PDF
|
2N5018
2N5019
MMBF5114
2N5115
MMBF5115
2N5116
MMBF5116
MMBFJ174
MMBFJ175
MMBFJ176
p1086
MMBFJ177
|
MMBFJ174
Abstract: P1087 MMBF5115 2N5019 J176 2N5018 2N5115 2N5116 J174 MMBF5114
Text: bflE D N ATL tSD1130 003^501 TDS • NSCS SE„ IC0N] JIS C r e t e ) P C hannel Vp@VDSlD RoS(on) ( a ) @ iD bvgss Device (V) (V) Min Min Ciss (PF) Max Crss (PF) Max ton (ns) Max toff (ns) Max Package (V) (nA) Min (mA) 10 -1 5 1000 75 1 45 10 35 65 T 0 -18(11)
|
OCR Scan
|
PDF
|
2N5018
2N5019
MMBF5114
O-236*
2N5115
MMBF5115
2N5116
MMBF5116
MMBFJ174
P1087
J176
J174
|
"P-Channel JFETs"
Abstract: PN4360 P1086 P1087 2N3820 2n5462 J176 J174 J175 J177 P1086
Text: This I cr Material Ln □ bH fcJ UJ a Copyrighted □ □ -tr □ -C 0= jr National m y f Semiconductor" P-Channel JFETs V Switches / Choppers ^GSS D evice No. Case Style o= Os _n By I Discrete POWER & Signal Technologies . / % b v gdo V @ l0 Min (|iA)
|
OCR Scan
|
PDF
|
|
2N3820 NATIONAL SEMICONDUCTOR
Abstract: NF 747 2n3820
Text: h99 hflhOhOO OETTOS^ I . /% Discrete PO W ER & Signal Technologies National Semiconductor P-Channel JFETs ^ Switches / Choppers ^GSS Device No. C ase Style b v gdo V @ l0 Min (|iA) 'a ss (n A )@ V DQ M ax (V) Dfofl) v (nA) @ V DS v gs M ax (V) (V) Min M ax
|
OCR Scan
|
PDF
|
2N3820
2N5460
2NS461
2N5462
PN4360
PN5033
2N3820 NATIONAL SEMICONDUCTOR
NF 747
|
PJ99
Abstract: No abstract text available
Text: AL L E GRO MI C ROS Y S T E MS 8514019 SPRAGUE. I NC T3 D • 0504336 SEM ICONDS/ IC S 00 0 3 h 0 M 93D 0 ■ ALGR 3> 03604 PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VgsioH Limits V BR)GSS Device
|
OCR Scan
|
PDF
|
TP3994
TP4381
TP5018
TP5019
TP5020
TP5021
TP5033
TP5114
TP5115
TP5116
PJ99
|
Untitled
Abstract: No abstract text available
Text: JFET Transistors National J2fl Semiconductor P-Channel JFETs in m Switches BVgsS BVgdo V @ Ig Min (juA) Igss (nA) @VDG Max (V) >D(off) (nA) @ Vds Max (V) 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 30 30 30 30 30 1 1 1 1 1 2 2 0.5 0.5
|
OCR Scan
|
PDF
|
2N5018
2N5019
2N5114
2N5115
2N5116
P1086
P1087
|
2sj44
Abstract: IFP44 PJ99 j174 transistor
Text: G 30 9-97 PJ99 Process SILICON JUNCTION FIELD-EFFECT TRANSISTOR • GENERAL PURPOSE AMPLIFIER • ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, Ts 10 mA +150°C -65°C to +175°C
|
OCR Scan
|
PDF
|
2N3993,
2N3993A
2N3994,
2N3994A
2N5114,
2N5115
2N5116
2SJ44
IFN5114,
IFN5115
IFP44
PJ99
j174 transistor
|
transistor gfs
Abstract: 2N5116 J176 2N3993 2N3993A IFP44 J174 J175 J177 P1086
Text: G 30 9-97 PJ99 Process SILICON JU N C T IO N FIELD-EFFECT TRANSISTOR • GENERAL PURPOSE AMPLIFIER • ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, T s 10 mA +150°C -65°C to +175°C
|
OCR Scan
|
PDF
|
IFP44
P1086,
P1087
2N3993,
2N3993A
2N3994,
2N3994A
2N5114,
2N5115
2N5116
transistor gfs
J176
2N3993
IFP44
J174
J175
J177
P1086
|
Untitled
Abstract: No abstract text available
Text: SPRAGUE/SENICOND 8514019 SPRAGUE. GROUP D • 0513050 S E M IC ON DS /ICS G QD 3 b G 4 1 93D 03604 J> - 7 ^ 2 .7 - z . s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oH VjBfljGSS I Device Type
|
OCR Scan
|
PDF
|
TP3994
TP4381
TP5018
TP5019
TP5020
TP5021
TP5033
TP5114
TP5115
TP5116
|
TP5114
Abstract: tp5115 PJ99 TP5021 J174 TPU304 TP3994 TP4381 TP5018 TP5019
Text: SPRAGUE/SENICOND 8 5 1 4 0 1 9 S P R A G U E . GROUP T3 D • 0513050 S E M I C O N D S / I C S 9 3 D GQD3bG4 0 3 6 0 4 1 ■ J> - 7 ^ 2 .7 - z .s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELEC TR IC AL CHARACTERISTICS at TA = 25°C
|
OCR Scan
|
PDF
|
TP3994
TP4381
TP5018
TP5019
O-226AA/STYLES
TP5114
tp5115
PJ99
TP5021
J174
TPU304
|