P11768EJ1V0DS00 Search Results

d1763

Abstract: d1780 D1780 transistor TRANSISTOR D1792 D1789 transistor D1795 D1789 NT 407 F transistor D1778 D1795 transistor
Text: PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of