Untitled
Abstract: No abstract text available
Text: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT13P12DE6
OT23-6
OT23-6
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P12D
Abstract: P12D marking ZXT13P12DE6 ZXT13P12DE6TA ZXT13P12DE6TC marking p12d DSA0037465
Text: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT13P12DE6
OT23-6
OT23-6
P12D
P12D marking
ZXT13P12DE6
ZXT13P12DE6TA
ZXT13P12DE6TC
marking p12d
DSA0037465
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE design, excellent power dissipation offers • Batch process
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OT-23
OD-123+
FM120-M+
BAS40x
FM1200-M+
OT-23
OD-123H
FM120-MH
FM130-MH
FM140-MH
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Untitled
Abstract: No abstract text available
Text: WILLAS General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ THRU MMBT3906TT1 FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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OD-123+
FM120-M+
MMBT3906T
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
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STBP120C
Abstract: charge pump mosfet driver STBP120 STBP120D P12D marking JESD51-7 YDT1591-2006 AM00240 AM00427
Text: STBP120 Overvoltage protection device with thermal shutdown Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch ■ Low RDS on of 90 mΩ ■ Integrated charge pump ■ Thermal shutdown protection ■ Softstart feature to control the inrush current
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STBP120
STBP120C
charge pump mosfet driver
STBP120
STBP120D
P12D marking
JESD51-7
YDT1591-2006
AM00240
AM00427
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JESD51-7
Abstract: STBP120D STBP120C AM0023
Text: STBP120 Overvoltage protection device with thermal shutdown Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch ■ Low RDS on of 90 mΩ ■ Integrated charge pump ■ Thermal shutdown protection ■ Softstart feature to control the inrush current
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STBP120
JESD51-7
STBP120D
STBP120C
AM0023
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Untitled
Abstract: No abstract text available
Text: STBP120 Overvoltage protection device with thermal shutdown Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch ■ Low RDS on of 90 mΩ ■ Integrated charge pump ■ Thermal shutdown protection ■ Softstart feature to control the inrush current
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STBP120
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p31b
Abstract: FUSE 451 P03cm TGS 813 TGS 823 P0080SAL P0080SBL P0080SAMCL P1200SDL p48a
Text: 9 Mechanical Data 9 Mechanical Data The following section describes the mechanical specifications of products in this Telecom Design Guide. Telecom Design Guide • 2006 Littelfuse, Inc. 9-1 www.littelfuse.com /GEJCPKECN &CVC Gas Plasma Arresters—Package Dimensions / Specifications . . . . . . . . . . . . . . . . . . . . . . . . 9-3
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SL1122A
SL0902A
SL1002A
O-220
p31b
FUSE 451
P03cm
TGS 813
TGS 823
P0080SAL
P0080SBL
P0080SAMCL
P1200SDL
p48a
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p30b diode
Abstract: p31b diode DIODE P31B Teccor P0080SC MC marking code DIODE P31A P06C diode p31b suppressor P3000AA61 p31b P31c
Text: This section presents complete electrical specifications for Teccor’s SIDACtor solid state overvoltage protection devices. DO-214AA Package Symbolization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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DO-214AA
DO-214AA
F1250T
F0500T
F1250T
F1251T
p30b diode
p31b diode
DIODE P31B
Teccor P0080SC MC marking code
DIODE P31A
P06C diode
p31b suppressor
P3000AA61
p31b
P31c
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DIODE P31B
Abstract: P61a p31b diode p26b p31b p482a p-8cm DIODE P31A P06C diode p35b
Text: This section presents complete electrical specifications for Teccor’s SIDACtor solid state overvoltage protection devices. DO-214AA Package Symbolization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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DO-214AA
DO-214AA
F1250T
F0500T
F1250T
F1251T
DIODE P31B
P61a
p31b diode
p26b
p31b
p482a
p-8cm
DIODE P31A
P06C diode
p35b
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Untitled
Abstract: No abstract text available
Text: MF1349-04 CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S1C8F360 Technical Manual S1C8F360 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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MF1349-04
S1C8F360
S1C8F360
E-08190
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51322
Abstract: programmer 144 NEC PRAD marking wt2 cp 5611 a2
Text: MF1349-03 CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S1C8F360 Technical Manual S1C8F360 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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MF1349-03
S1C8F360
S1C8F360
E-08190
51322
programmer 144
NEC PRAD
marking wt2
cp 5611 a2
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S1C8F360
Abstract: E0C88104 E0C88112 E0C88316 E0C88317 PC-9800 S1C88348 epson cartridge pin diagram NEC K07D marking wt2
Text: MF1349-02 CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S1C8F360 Technical Manual S1C8F360 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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MF1349-02
S1C8F360
S1C8F360
E0C88104
E0C88112
E0C88316
E0C88317
PC-9800
S1C88348
epson cartridge pin diagram
NEC K07D
marking wt2
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S1C8F360F513200
Abstract: No abstract text available
Text: CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S1C8F360 Technical Manual S1C8F360 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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S1C8F360
S1C8F360
S1C8F360F513200
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triac zo 109 ma
Abstract: "triac protection" overcurrent P-8CM P3100EB Triac ZO 405 S10080 p31b diode schematic surge protector ac mains p31b COACh iis
Text: Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: sidactor.techsales@teccor.com An Invensys company Teccor Electronics is the proprietor of the SIDACtor , Battrax®, and TeleLink®
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E133083
E191008
O-220
triac zo 109 ma
"triac protection" overcurrent
P-8CM
P3100EB
Triac ZO 405
S10080
p31b diode
schematic surge protector ac mains
p31b
COACh iis
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P-8CM
Abstract: IC P605 8 pin DIODE P31A "triac protection" overcurrent MOV surge protection circuit diagram p31b DIODE P31B Teccor P0080SC MC marking code diode s4 do-214 P3100EB
Text: Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: techsalessidactor@littelfuse.com A Littelfuse company Teccor Electronics is the proprietor of the SIDACtor , Battrax®, and TeleLink®
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E133083
E191008
O-220
P-8CM
IC P605 8 pin
DIODE P31A
"triac protection" overcurrent
MOV surge protection circuit diagram
p31b
DIODE P31B
Teccor P0080SC MC marking code
diode s4 do-214
P3100EB
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S1C37120
Abstract: NAND512W3A2BN6 S1C33E07 BT 342 project I334 V471
Text: CMOS 32-BiT SinglE ChiP MiCrOCOnTrOllEr S1C33E07 Technical Manual Rev.1.4 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability
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32-BiT
S1C33E07
S1C37120
NAND512W3A2BN6
S1C33E07
BT 342 project
I334
V471
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Inter-ICs
Abstract: chn 940 S1C33L01 1431T dot led display large size with circuit diagram YUV411 i781symbol LUT43 S1C33L19 786LCD
Text: S1C33L19 Technical Manual CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33L19 Technical Manual S1C33L19 Technical Manual SEMICONDUCTOR OPERATIONS DIVISION EPSON Electronic Devices Website http://www.epson.jp/device/semicon_e Document code: 411664200 April 2009 in JAPAN D
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S1C33L19
32-BIT
S1C33L19
Inter-ICs
chn 940
S1C33L01
1431T
dot led display large size with circuit diagram
YUV411
i781symbol
LUT43
786LCD
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S1C33L17
Abstract: S1C33L17D S1C33L17F Inter-ICs dot led display large size with circuit diagram LOT code stmicroelectronics S1C33L01 S1C33L17B 2451c BT 342 project
Text: S1C33L17 Technical Manual CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33L17 Technical Manual S1C33L17 Technical Manual SEMICONDUCTOR OPERATIONS DIVISION EPSON Electronic Devices Website http://www.epson.jp/device/semicon_e Document code: 411520600 Fist issue June, 2008 C B
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S1C33L17
32-BIT
S1C33L17
S1C33L17D
S1C33L17F
Inter-ICs
dot led display large size with circuit diagram
LOT code stmicroelectronics
S1C33L01
S1C33L17B
2451c
BT 342 project
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S1C33E07
Abstract: I334 s1c37120 LP115 CFP400 QFP24-144pin spp07 NAND512W3A2BN6 V57-2 cn 096 v152
Text: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33E07 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not
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32-BIT
S1C33E07
warra586-5500
S1C33E07
I334
s1c37120
LP115
CFP400
QFP24-144pin
spp07
NAND512W3A2BN6
V57-2
cn 096 v152
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murata REEL label
Abstract: No abstract text available
Text: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33E07 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not
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32-BIT
S1C33E07
murata REEL label
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LCD 320 x 240 mono stn
Abstract: No abstract text available
Text: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33E07 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not
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32-BIT
S1C33E07
LCD 320 x 240 mono stn
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i351
Abstract: LOGIC FCT BT 342 project
Text: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33E08 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not
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32-BIT
S1C33E08
i351
LOGIC FCT
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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