Untitled
Abstract: No abstract text available
Text: Pressure sensor 2 PNP transistor switching outputs PK010R-P13-2UP8X-V1141 • Compact design ■ Pressure and vacuum monitoring ■ Rotatable body ■ Display rotatable by 180° ■ Excellent EMC properties ■ Pressure range 0 … 10 bar rel. Wiring diagram
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PK010R-P13-2UP8X-V1141
10bar
04psi
30VDC
2013-07-13T17
D-45472
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Untitled
Abstract: No abstract text available
Text: Pressure sensor 2 PNP transistor switching outputs PK01VR-P13-2UP8X-V1141 • Compact design ■ Pressure and vacuum monitoring ■ Rotatable body ■ Display rotatable by 180° ■ Excellent EMC properties ■ Pressure range -1 … 0 bar rel. Wiring diagram
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PK01VR-P13-2UP8X-V1141
30VDC
2013-07-13T17
D-45472
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PDF
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w32 transistor
Abstract: w41 transistor w33 transistor transistor p31 transistor k33 34 transistor w32 ic 4559 transistor 4559 455a transistor k33
Text: APPLICATION NOTE 455A Group, 4559 Group Differences between 455A Group and 4559 Group 1. The Performance Overview Differences Parameter Number of basic instructions ROM type ROM size RAM size Input/Output ports D0 ~ D5 D6, D7 P00 ~ P03 P10 ~ P13 P20 ~ P23
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M3455AG8FP
M3455AG8-XXXFP)
M34559G6FP
M34559G6-XXXFP)
M3455AGCFP
M3455AGC-XXXFP)
REC05B0047-0200/Rev
w32 transistor
w41 transistor
w33 transistor
transistor p31
transistor k33 34
transistor w32
ic 4559
transistor 4559
455a
transistor k33
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transistor p14
Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8
Text: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.
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LM2940
19-May-2005
transistor p14
P7 transistor
transistor P1 P 12
BS2-IC
jack p10
p15 transistor
transistor p13
P4 transistor
transistor p15
transistor p8
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TRANSISTOR p50
Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
Text: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the
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eSHP170COB
eSHP170COB
eSHP170
eSHP170
AP-eSH-0005
TRANSISTOR p50
p13 transistor
P41 transistor
transistor p13
P40 transistor
p21 transistor
transistor P32 25
p23 transistor
transistor p31
transistor p11
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transistor p13
Abstract: LDTA114WLT1G marking P13 sot-23 p13 transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA114WLT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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LDTA114WLT1G
OT-23
transistor p13
LDTA114WLT1G
marking P13 sot-23
p13 transistor
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transistor p13
Abstract: No abstract text available
Text: 200mA / 30V Low VCE sat Digital transistors (with built-in resistors) DTB743ZE / DTB743ZM Dimensions (Unit : mm) Applications Inverter, Interface, Driver DTB743ZE 0.7 1.6 0.55 0.3 0.8 (2) 1.6 (3) (1) 0.2 0.2 0.1Min. Feature 1) VCE(sat) is lower than conventional products.
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200mA
DTB743ZE
DTB743ZM
DTB743ZE
R1120A
transistor p13
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marking P20 SOT23
Abstract: marking code p13 P08 transistor P17 MARKING MARKING P04
Text: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 = R2
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AEC-Q101
J-STD-020
DDTA123ECA
DDTA143ECA
DDTA114ECA
DDTA124ECA
DDTA144ECA
DDTA115ECA
DS30333
marking P20 SOT23
marking code p13
P08 transistor
P17 MARKING
MARKING P04
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marking code A40 SOT23-5
Abstract: No abstract text available
Text: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 = R2
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AEC-Q101
J-STD-020
DDTA123ECA
DDTA143ECA
DDTA114ECA
DDTA124ECA
DDTA144ECA
DDTA115ECA
DS30333
marking code A40 SOT23-5
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PDF
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DTB743ZE
Abstract: DTB743ZM SC-75A
Text: DTB743ZE / DTB743ZM Transistors -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB743ZE / DTB743ZM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB743ZE 0.7 1.6 0.55 0.3 zFeature 1) VCE(sat) is lower than conventional products.
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DTB743ZE
DTB743ZM
-200mA
DTB743ZE
DTB743ZM
SC-75A
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PDF
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Untitled
Abstract: No abstract text available
Text: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 R2 Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound
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AEC-Q101
J-STD-020
MIL-STD-202,
DS30333
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PDF
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Untitled
Abstract: No abstract text available
Text: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
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RF2132
RF2132
800MHz
950MHz
IS-95A
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800MHz CDMA Handset Circuit Diagram
Abstract: RF2132
Text: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
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RF2132
RF2132
800MHz
950MHz
IS-95A
800MHz CDMA Handset Circuit Diagram
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PDF
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PF816
Abstract: No abstract text available
Text: RF2132 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment • 4.8V JCDMA/TACS Handsets Product Description The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
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RF2132
RF2132
800MHz
950MHz
IS-95A
PF816
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cmos 4553
Abstract: ic 4553 4559 transistor p13 pin of ic 4553 4559Group w41 transistor 4553 transistor p31 P32 transistor
Text: APPLICATION NOTE 4553 Group, 4559 Group Differences between 4553 Group and 4559 Group 1. The Performance Overview Differences Function Parameter Number of basic instructions ROM type ROM size RAM size Input/output ports D0 ~ D5 D6, D7 P00 ~ P03 LCD control circuit
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4553H
4553group
REC05B0046-0100/Rev
cmos 4553
ic 4553
4559
transistor p13
pin of ic 4553
4559Group
w41 transistor
4553
transistor p31
P32 transistor
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DTC115EKA
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors • Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thinfilm resistors with complete isolation to allow
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DTC115EKA
100MHz*
DTC115EKA
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Untitled
Abstract: No abstract text available
Text: Digital transistors built-in resistors • Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thinfilm resistors with complete isolation to allow
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DTC115EKA
100MHz*
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2158 LC88F42A0PA/A0PAU CMOS LSI 16-bit ETR Microcontroller for Car Audio Systems http://onsemi.com ALL FLASH Overview The LC88F42A0PA/A0PAU is 16-bit microcontroller which is ideally suited as a sub controller in car audio applications for the control of “Power” “Operating mode.” They are configured around a CPU that operates at a high
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ENA2158
LC88F42A0PA/A0PAU
16-bit
LC88F42A0PA/A0PAU
16-bit
A2158-23/23
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2158 CMOS LSI LC88F42A0PA/A0PAU For Car Audio Systems 16-bit ETR Microcontroller ALL FLASH Overview The LC88F42A0PA/A0PAU is 16-bit microcontroller which is ideally suited as a sub controller in car audio applications for the control of “Power” “Operating mode.” They are configured around a CPU that operates at a high
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ENA2158
LC88F42A0PA/A0PAU
16-bit
LC88F42A0PA/A0PAU
16-bit
A2158-23/23
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HPA-R11
Abstract: HPA-D11 HPA-R13 HPA-P11 HPA-T11 HPA-E11 Yamatake hpA HPA-T13 HPA-A11 HPA-P13
Text: SR. No. Yamatake Corporation SPECIFICATIONS THROUGH SCAN POLARIZED RETROREFLECTIVE SCAN SET EMITTER RECEIVER H P A -T 13 H PA-E13 HPA-R13 H PA -P13 HPA-T11 HPA-E11 HPA-R11 HPA-P11 POLARIZED RETROREFLECTIVE SCAN DIFFUSE SCAN DIFFUSE SCAN SELF-DIAGNOSIS/ FOR TRANSPARENT OBJECTS
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OCR Scan
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HPA-T13
HPA-E13
HPA-R13
HPA-P13
HPA-T11
HPA-E11
HPA-R11
HPA-P11
HPA-F11
HPA-D11
HPA-R11
HPA-D11
HPA-R13
HPA-P11
HPA-T11
HPA-E11
Yamatake hpA
HPA-T13
HPA-A11
HPA-P13
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PDF
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p331
Abstract: SGSP130
Text: S G S-THOMSON 07E D | 7 ^ 2 3 7 0Dl7fl07 b | _ 73C 1 7 3 0 4 _ O j T Z J - O y _ _ ê f. V ñ K W% i I 1 • SGSP13Ò/P13Ì/P132 ;] SGSP230/P231/P232 .4 SGSP330/P331/P332 - 1 N-CHÀNNEL POWER MOS TRANSISTORS & HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate
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OCR Scan
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0Dl7fl07
SGSP13Ã
/P132
SGSP230/P231/P232
SGSP330/P331/P332
OT-82
O-220
SGSP130
SGSP230
SGSP330
p331
SGSP130
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PDF
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RF2119
Abstract: PSSOP16 F2119
Text: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held
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OCR Scan
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F2119
915MHz
RF2119
800MHz
960MHz
RF2119
PSSOP16
F2119
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PDF
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M74 marking
Abstract: MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109
Text: Philips Semiconductors Small-signal fteld-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER TYPE NUMBER MARKING CODE
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OT143
OT343
BF510
BF511
BF512
BF513
BF545A
BF545B
BF545C
BF556A
M74 marking
MARKING m3p
marking code NB SOT23
m2p SOT23
m33 sot23
MARKING CODE m33
marking Code philips
BSR58
marking M33
BF1109
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sot23 marking M6p
Abstract: PMBFJ111 PMBFJ174
Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER
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OCR Scan
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OT143
OT343
BF510
BF994S
BST120
BF511
BF996S
BST122
BF512
BF997
sot23 marking M6p
PMBFJ111
PMBFJ174
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