a1270* transistor
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA892TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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PA892TD
2SC5668)
2SC5668
P15273EJ1V0DS
a1270* transistor
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nec japan 7812
Abstract: transistor NEC 7812 2SC5668 7812 nec transistor t 2180
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA892TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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PA892TD
2SC5668)
2SC5668
PA892TD-T3
nec japan 7812
transistor NEC 7812
2SC5668
7812 nec
transistor t 2180
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2SC5668
Abstract: nec japan 7812
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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