Untitled
Abstract: No abstract text available
Text: PS-10 10mm SMD Potentiometer MAIN FEATURES Specifically designed for leadfree reflow soldering processes excellent performance Carbon resistive element Dust proof enclosure Self extinguishable plastic UL 94V-0 Also upon request: Wiper positioned at 50% or fully clockwise.
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PS-10
EAR99
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Untitled
Abstract: No abstract text available
Text: PS-15 15 mm SMD Potentiometer FEATURES Specifically designed for leadfree reflow soldering processes excellent performance 10k cycles mechanical life. IP54 protection according to IEC 60529. Carbon resistive element. Self extinguishable plastic UL 94V-0.
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PS-15
PS-10)
EAR99
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piher potentiometer 10mm
Abstract: No abstract text available
Text: PS-15 15 mm SMD Potentiometer FEATURES Specifically designed for leadfree reflow soldering processes excellent performance 10k cycles mechanical life. Dust proof enclosure. Carbon resistive element. Self extinguishable plastic UL 94V-0. 10mm version available (PS-10)
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PS-15
PS-10)
EAR99
piher potentiometer 10mm
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Untitled
Abstract: No abstract text available
Text: PS-10 10mm SMD Potentiometer MAIN FEATURES Specifically designed for leadfree reflow soldering processes excellent performance Carbon resistive element IP54 protection according to IEC 60529 Self extinguishable plastic UL 94V-0 Full traceability
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PS-10
EAR99
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Untitled
Abstract: No abstract text available
Text: PS-10 10mm SMD Potentiometer MAIN FEATURES Specifically designed for leadfree reflow soldering processes excellent performance Carbon resistive element IP54 protection according to IEC 60529 Self extinguishable plastic UL 94V-0 Full traceability
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PS-10
EAR99
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Untitled
Abstract: No abstract text available
Text: PS-15 15 mm SMD Potentiometer FEATURES Specifically designed for leadfree reflow soldering processes excellent performance 10k cycles mechanical life. IP54 protection according to IEC 60529. Carbon resistive element. Self extinguishable plastic UL 94V-0.
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PS-15
PS-10)
EAR99
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transistor SMD P1f
Abstract: SMD Transistor p1f Telefunken Tv TTV 295X Circuit Diagram 9040 motorola bul 45 mcs251 65510 tag 8610 inverter sla 1003 aeg b2 60 52 30 eltek
Text: TSC80251G1D TSC80251G1D Extended 8–bit Microcontroller with Serial Communication Interfaces Design Guide – November 1997 MATRA MHS Rev. B – 10 Nov 1997 TSC80251G1D Design Guide Information TEMIC reserves the right to make changes in the products or specifications contained in this document in order to improve
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TSC80251G1D
repre422
transistor SMD P1f
SMD Transistor p1f
Telefunken Tv TTV 295X Circuit Diagram
9040 motorola bul 45
mcs251
65510
tag 8610
inverter sla 1003
aeg b2 60 52 30
eltek
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Untitled
Abstract: No abstract text available
Text: Light Touch Switches/EVQP1/9P 6 mm Square Long Travel SMD Light Touch Switches Type: EVQP1/EVQ9P • Features ● External dimensions : 6.0 mm҂6.1 mm, Height 5.0 mm Including the push plate ● Steady and low contact resistance (100 mΩ max.) ● Excellent solderability (J-bent-type terminals)
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EVQP0405M
Abstract: EVQP1D05M P1f smd EVQ9P105M
Text: Light Touch Switches/EVQP0/P1/9P 6 mm Square Long Travel SMD Light Touch Switches Type: EVQP0/EVQP1/EVQ9P • Features ● External dimensions : 6.0 mm҂6.1 mm, Height 5.0 mm Including the push plate ● Steady and low contact resistance (100 mΩ max.) ● Excellent solderability (J-bent-type terminals)
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transistor SMD P1f
Abstract: SMD Transistor p1f SMD P1F EVQP1D05M P1F smd
Text: Light Touch Switches/EVQP1/9P 6 mm Square Long Travel SMD Light Touch Switches Type: EVQP1/EVQ9P • Features ● External dimensions : 6.0 mm҂6.1 mm, Height 5.0 mm Including the push plate ● Steady and low contact resistance (100 mΩ max.) ● Excellent solderability (J-bent-type terminals)
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transistor SMD P1f
Abstract: P1F smd EVQP0405M SMD Transistor p1f smd p1f transistor SMD p04 smd p04 P1y transistor Transistor p1f EVQP1D05M
Text: Light Touch Switches/EVQP0/P1/9P 6 mm Square Long Travel SMD Light Touch Switches Type: EVQP0/EVQP1/EVQ9P • Features ● External dimensions : 6.0 mm҂6.1 mm, Height 5.0 mm Including the push plate ● Steady and low contact resistance (100 mΩ max.) ● Excellent solderability (J-bent-type terminals)
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ES150
transistor SMD P1f
P1F smd
EVQP0405M
SMD Transistor p1f
smd p1f
transistor SMD p04
smd p04
P1y transistor
Transistor p1f
EVQP1D05M
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Untitled
Abstract: No abstract text available
Text: Light Touch Switches/EVQP0/P1/9P 6 mm Square Long Travel SMD Light Touch Switches Type: EVQP0/EVQP1/EVQ9P • Features ● External dimensions : 6.0 mm҂6.1 mm, Height 5.0 mm Including the push plate ● Steady and low contact resistance (100 mΩ max.) ● Excellent solderability (J-bent-type terminals)
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Untitled
Abstract: No abstract text available
Text: Light Touch Switches/EVQP0/P1/9P 6 mm Square Long Travel SMD Light Touch Switches Type: EVQP0/EVQP1/EVQ9P • Features ● External dimensions : 6.0 mm҂6.1 mm, Height 5.0 mm Including the push plate ● Steady and low contact resistance (100 mΩ max.) ● Excellent solderability (J-bent-type terminals)
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ES148
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transistor SMD P1f
Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
transistor SMD P1f
R04003
A114
A115
JESD22
ATC600S5R6CW250
PHEMT marking code a
ATC600S680
marking code P1F
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transistor SMD P1f
Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
transistor SMD P1f
Transistor p1f
MARKING P1F
SMD Transistor p1f
p1f on
MIL-HDBK-263
T491B105M035AS7015
ON MARKING P1F
Filtronic
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ATC600S680JW250
Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS
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FPD1000AS
FPD1000AS
R04003,
CB100
ATC600S680JW250
PC-SP-000010-006
AMP-103185-2
atc600s
ATC600S5R
T491B105M035AS7015
ATC600S2R0BW250
ATC600S680
ATC600S3R
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
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transistor SMD P1f
Abstract: SMD Transistor p1f PHEMT marking code a MARKING P1F Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015
Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
transistor SMD P1f
SMD Transistor p1f
PHEMT marking code a
MARKING P1F
Transistor p1f
MIL-HDBK-263
T491B105M035AS7015
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SMD Transistor p1f
Abstract: bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD FPD1000AS MIL-HDBK-263
Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
SMD Transistor p1f
bd 222 smd
MARKING P1F
smd p1f
transistor SMD P1f
marking code 68W
PHEMT marking code a
transistor BD 222 SMD
MIL-HDBK-263
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transistor SMD P1f
Abstract: atc600s marking code 68W MARKING P1F SMD Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015 Transistor p1f CB100
Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz
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FPD1000AS
FPD1000AS
R04003,
CB100
transistor SMD P1f
atc600s
marking code 68W
MARKING P1F
SMD Transistor p1f
MIL-HDBK-263
T491B105M035AS7015
Transistor p1f
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Untitled
Abstract: No abstract text available
Text: PT-10 10 mm Carbon Potentiometer FEATURES Carbon resistive element IP54 protection according to IEC 60529 Polyester substrate Also upon request: Wiper positioned at 50% or fully clockwise. Supplied in magazines for automatic insertion. Long life model for low cost control potentiometer applications
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PT-10
PS-10)
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Untitled
Abstract: No abstract text available
Text: PT-10 10 mm Carbon Potentiometer FEATURES • Carbon resistive element • Dust proof enclosure • Polyester substrate • Also upon request: Wiper positioned at 50% or fully clockwise. Supplied in magazines for automatic insertion. Long life model for low cost control potentiometer applications
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PT-10
PS-10)
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Untitled
Abstract: No abstract text available
Text: PT-10 10 mm Carbon Potentiometer FEATURES Carbon resistive element IP54 protection according to IEC 60529 Polyester substrate Also upon request: Wiper positioned at 50% or fully clockwise. Supplied in magazines for automatic insertion. Long life model for low cost control potentiometer applications
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PT-10
PS-10)
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SOT-223 P1f
Abstract: p1f sot223
Text: ON Semiconductort PZT2222AT1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount
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OT-223
PZT2907AT1
PZT2222AT1
inch/1000
PZT2222AT3
inch/4000
PZT2222AT1
SOT-223 P1f
p1f sot223
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