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    P1F TRANSISTOR Search Results

    P1F TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P1F TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TSC80251G1D TSC80251G1D Extended 8–bit Microcontroller with Serial Communication Interfaces Design Guide – 25 Sept 1997 MATRA MHS Rev. A – 25 Sept 1997 TSC80251G1D Introduction to TSC80251G1D 1 Design Information 2 Electrical and Mechanical Information


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    TSC80251G1D 1111b PDF

    programming 80c51 counter with 7 segment lcd

    Abstract: P1F motorola MCS51 instruction set mcs251 80C51 C251 TSC80251 TSC80251G1 TSC80251G1D TSC83251G1D
    Text: TSC80251G1D TSC80251G1D Extended 8–bit Microcontroller with Serial Communication Interfaces Design Guide – October 1998 TSC80251G1D Design Guide Information TEMIC reserves the right to make changes in the products or specifications contained in this document in order to improve design or performance and to supply the


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    TSC80251G1D programming 80c51 counter with 7 segment lcd P1F motorola MCS51 instruction set mcs251 80C51 C251 TSC80251 TSC80251G1 TSC80251G1D TSC83251G1D PDF

    transistor SMD P1f

    Abstract: SMD Transistor p1f Telefunken Tv TTV 295X Circuit Diagram 9040 motorola bul 45 mcs251 65510 tag 8610 inverter sla 1003 aeg b2 60 52 30 eltek
    Text: TSC80251G1D TSC80251G1D Extended 8–bit Microcontroller with Serial Communication Interfaces Design Guide – November 1997 MATRA MHS Rev. B – 10 Nov 1997 TSC80251G1D Design Guide Information TEMIC reserves the right to make changes in the products or specifications contained in this document in order to improve


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    TSC80251G1D repre422 transistor SMD P1f SMD Transistor p1f Telefunken Tv TTV 295X Circuit Diagram 9040 motorola bul 45 mcs251 65510 tag 8610 inverter sla 1003 aeg b2 60 52 30 eltek PDF

    80251

    Abstract: MATRA MHS 80C51 C251 TSC80251 TSC80251G1 TSC87251G1 philips marking codes NATIONAL LINEAR VOL1
    Text: TSC 80251G1 TSC 80251G1 Extended 8–bit Microcontroller with Serial Communication Interfaces Design Guide – 1996 MATRA MHS TSC 80251G1 TEMIC reserves the right to make changes in the products or specifications contained in this document in order to improve design or performance and to supply the best possible products. TEMIC also assumes no responsibility for


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    80251G1 TSC80251G1 A16CBR B16CBR TSC87251G1 80251 MATRA MHS 80C51 C251 TSC80251 philips marking codes NATIONAL LINEAR VOL1 PDF

    Transistor p1f

    Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
    Text: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website


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    FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS PDF

    SOT-223 P1f

    Abstract: Transistor p1f MARKING P1F on semiconductor p1f P1F transistor P1F NPN transistor p1f transistor pnp
    Text: ON Semiconductort PZT2222AT1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


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    OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 PZT2222AT1 SOT-223 P1f Transistor p1f MARKING P1F on semiconductor p1f P1F transistor P1F NPN transistor p1f transistor pnp PDF

    1am surface mount diode

    Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
    Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC


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    O-226AA O-236AB OT-23) OT-223) MMBTA42LT1 MMBT5551LT1 BSP52T1 1am surface mount diode c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f PDF

    SOT-223 P1f

    Abstract: Transistor p1f p1f sot-223 P1F sot223 on semiconductor p1f sot223 P1F PZT2222AT1G PZT2222AT1 P1F transistor PZT2222AT3
    Text: PZT2222AT1 Preferred Device NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


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    PZT2222AT1 OT-223 PZT2907AT1 OT-223 reel94 SOT-223 P1f Transistor p1f p1f sot-223 P1F sot223 on semiconductor p1f sot223 P1F PZT2222AT1G PZT2222AT1 P1F transistor PZT2222AT3 PDF

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


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    2PA1576Q SC-70 BC808W OT323 2PA1576R BC808-16 2PA1576S BC808-16W t06 marking sot23 BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23 PDF

    transistor SMD P1f

    Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


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    FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f R04003 A114 A115 JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F PDF

    transistor SMD P1f

    Abstract: SMD Transistor p1f R04003 marking code 68W transistor BD 222 SMD MARKING P1F rci-0402 bd 222 smd TRANSISTOR SMD MARKING CODE mf ON MARKING P1F
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


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    FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f SMD Transistor p1f R04003 marking code 68W transistor BD 222 SMD MARKING P1F rci-0402 bd 222 smd TRANSISTOR SMD MARKING CODE mf ON MARKING P1F PDF

    transistor SMD P1f

    Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


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    FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f Transistor p1f MARKING P1F SMD Transistor p1f p1f on MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic PDF

    ATC600S680JW250

    Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


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    FPD1000AS FPD1000AS R04003, CB100 ATC600S680JW250 PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


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    FPD1000AS FPD1000AS R04003, CB100 PDF

    SMD Transistor p1f

    Abstract: bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD FPD1000AS MIL-HDBK-263
    Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


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    FPD1000AS FPD1000AS R04003, CB100 SMD Transistor p1f bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD MIL-HDBK-263 PDF

    transistor SMD P1f

    Abstract: atc600s marking code 68W MARKING P1F SMD Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015 Transistor p1f CB100
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


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    FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f atc600s marking code 68W MARKING P1F SMD Transistor p1f MIL-HDBK-263 T491B105M035AS7015 Transistor p1f PDF

    SOT-223 P1f

    Abstract: on semiconductor p1f p1f sot-223 PZT2222AT1 sot223 P1F onsemi SOT-223 PZT2222AT1G PZT2222AT3 PZT2222AT3G PZT2907AT1
    Text: PZT2222AT1 Preferred Device NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


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    PZT2222AT1 OT-223 PZT2907AT1 OT-223 PZT2222AT1/D SOT-223 P1f on semiconductor p1f p1f sot-223 PZT2222AT1 sot223 P1F onsemi SOT-223 PZT2222AT1G PZT2222AT3 PZT2222AT3G PZT2907AT1 PDF

    Transistor p1f

    Abstract: No abstract text available
    Text: • b b S B ' m 002Sflfl0 TTfl B A P X N AUER PHILIPS/DISCRETE PMBT5550 b7E T> yv SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor fo r general purposes and especially telephony applications and encapsulated in a SOT-23 envelope.


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    002Sflfl0 PMBT5550 OT-23 Transistor p1f PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic Semiconductor s TSC 80251G1 Table of Contents G eneral Introduction Extended 8-bit Microcontroller with Analog Interfaces .1. Section I: Introduction to TSC80251G1 Chapter 1: Core Features . 1 .1.1


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    80251G1 TSC80251G1 TSC80251G 16CBR 1-B16CBR TSC87251G 1-12CB 1-12CC PDF

    motorola p1f

    Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING
    Text: SOT-223 Devices Maximum die size 80 mil x 100 mil CASE 318E-04 Plastic-Encapsulated General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h p E @ lc Device I Max mA Marking V BR CEO Min I BH 80 40 250 150 80 40 25 150 NPN I BCP56T1


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    OT-223 318E-04 BCP56T1 BCP53T1 PZT2222AT1 PZT2907AT1 BSP52T1 PZTA14T1 motorola p1f P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING PDF

    SOT89 MARKING CODE 3D

    Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
    Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK


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    OT143, OT223 OT323 PXTA27 BCX51 BCW60A BCW60B BCX51-10 BCW60C BCX51-16 SOT89 MARKING CODE 3D sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G PDF

    Transistor p1f

    Abstract: SOT-223 P1f MARKING P1F motorola p1f on semiconductor p1f PZT2222AT1 P1F transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar E pitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear ancI switching applications. The device is housed in the SOT-223 package which is de^signed for


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    OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 PZT2222AT1 Transistor p1f SOT-223 P1f MARKING P1F motorola p1f on semiconductor p1f P1F transistor PDF

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


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    2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F PDF

    MARKING P1F

    Abstract: motorola p1f transistor P1F P1F motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar E pitaxial Transistor PZT2222AT1 Motorola Preferred D*vlca T h is N P N S ilic o n E p ita x ia l t r a n s is t o r is d e s ig n e d fo r u s e in lin e a r a n d s w itc h in g a p p lic a tio n s . T h e d e v ic e is h o u s e d in th e S O T -2 2 3 p a c k a g e w h ic h is


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    PZT2222AT1 MARKING P1F motorola p1f transistor P1F P1F motorola PDF