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    P394 PHOTO Search Results

    P394 PHOTO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RAA239101A2GNP#HA0 Renesas Electronics Corporation Photoelectric Smoke Detector AFE IC Visit Renesas Electronics Corporation
    ISL29006IROZ-T7 Renesas Electronics Corporation Small, Low Power, Current-Output Ambient Light Photo Detect IC Visit Renesas Electronics Corporation
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    ISL29006IROZ-EVALZ Renesas Electronics Corporation Small, Low Power, Current-Output Ambient Light Photo Detect IC Eval Board Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation

    P394 PHOTO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C1103

    Abstract: No abstract text available
    Text: INFRARED DETECTOR PbS photoconductive detector P394 series, P2532-01, P2682-01 Infrared detectors utilizing photoconductive effects Features Applications l Room temperature operation Makes PbS cells useful in a wide range of applications including radiation thermometers and flame monitors


    Original     		P2532-01, P2682-01 SE-171 KIRD1019E05 C1103 PDF

    Untitled

    Abstract: No abstract text available
    Text: INFRARED DETECTOR PbS photoconductive detector P394 series, P2532-01, P2682-01 Infrared detectors utilizing photoconductive effects Features Applications l Room temperature operation Makes PbS cells useful in a wide range of applications including radiation thermometers and flame monitors


    Original     		P2532-01, P2682-01 SE-171 KIRD1019E03 PDF

    Untitled

    Abstract: No abstract text available
    Text: INFRARED DETECTOR PbS photoconductive detector P394 series, P2532-01, P2682-01 Infrared detectors utilizing photoconductive effects Features Applications l Room temperature operation Makes PbS cells useful in a wide range of applications including radiation thermometers and flame monitors


    Original     		P2532-01, P2682-01 SE-171 KIRD1019E02 PDF

    P394 series

    Abstract: P394-22 p394 photo P4638 C4696 DETECTOR FLAME P2532-01 P2682-01 Hamamatsu PbS A3179-01
    Text: INFRARED DETECTOR PbS photoconductive detector P394 series, P2532-01, P2682-01 Infrared detectors utilizing photoconductive effects Features Applications l Room temperature operation Makes PbS cells useful in a wide range of applications including radiation thermometers and flame monitors


    Original     		P2532-01, P2682-01 SE-171 KIRD1019E05 P394 series P394-22 p394 photo P4638 C4696 DETECTOR FLAME P2532-01 P2682-01 Hamamatsu PbS A3179-01 PDF

    P819

    Abstract: P1026 p2532-01 P397 12x101 P394A
    Text: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­


    OCR Scan     		P394A P3258 P394R P3226 5X104 3X105 1X105 3X104 P819 P1026 p2532-01 P397 12x101 PDF

    pr 8501 b

    Abstract: P394A P3226-02 P3226 PBS P394 series
    Text: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame


    OCR Scan     		KI80A0055EA 0G0470 P394A, P3226-02 P791-11 P3207-04 P4115 K1713-01, K3413-01, P3981-01, pr 8501 b P394A P3226-02 P3226 PBS P394 series PDF

    P3226

    Abstract: P5168 P3226-02 G5832-05 P2682-01 P394 series Photodiode 2PIN TYPES G3476-01 G5832-02 P3258-02
    Text: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame


    OCR Scan     		KIRDA0044EB 000M7D3 P2750, C4159, C4159-02 K1RDA004SEB C5185, C3757-02 D004704 P3226 P5168 P3226-02 G5832-05 P2682-01 P394 series Photodiode 2PIN TYPES G3476-01 G5832-02 P3258-02 PDF

    Thermistor IR Detector

    Abstract: B1920-01
    Text: HAMAMATSU CORP l^ E D • 4 5 S ci t , Q I:] □ □ □ S T lL i 7 ■ High-Speed Ge Photodiodes Characteristics Type No. Out­ line Package No. Window Material P.28 Effective Sensitive Area Size Effective Sensitive Area (mm) (mm2) IR Cutoff Wave­ length


    OCR Scan     		B2297-02 B2297-03 B2297-04 2856K K1713-01 K1713-02 K1713-03 P1026 P2750 P2748 Thermistor IR Detector B1920-01 PDF

    transistor C4159

    Abstract: No abstract text available
    Text: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a


    OCR Scan     		G6891, G6893 P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, transistor C4159 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEETbDT OGGHböb T HS Spectral Response 0.19 to 5 [im Type No. Outline No. P.36 Detector Element Active Area (mm) Shunt Resistance or Dark Resistance (MQ) Peak Photo Element Sensitivity Sensitivity Tempera­ Wavelength S ture Xp X.=?ip (-C ) (nm) (AW ) NEP


    OCR Scan     		K3413-03 4x101 3x10s 1x101 P3226-02 P394A, P3207-04 P791-11 P4115 PDF

    B1919-01

    Abstract: B1920-01 hamamatsu PIN TO5
    Text: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Characteristics O Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919


    OCR Scan     		0QQ271S B1720-04 B1720-02 B1720-05 B2144 B2144-01 B1918 B1918-01 B1919 B1919-01 B1920-01 hamamatsu PIN TO5 PDF

    P5168

    Abstract: No abstract text available
    Text: PbS Photoconductive Cells Easy-to-Use Photoconductive Detectors with High Responsivity Over 3 ¡u m PbS cells make use of the photoconductive effect by which the elec­ trical resistance decreases with application o f infrared radiation Operates at Room Temperature


    OCR Scan     		KIRDB0048EA P5168 PDF

    lvds+20+pin+to+30+pin

    Abstract: No abstract text available
    Text: MCT HgCdTe Photoconductive Detectors ( Thermoelectric cooling assures stable operation over extended time periods t e -c o o m Types) :C 111 • Choice of spectral response The band gap of HgCdTe can be modified by controlling the compo­ sition ratio of HgTe and CdTe. Utilizing this fact, various types are


    OCR Scan     		P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA C4159, lvds+20+pin+to+30+pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PbS Photoconductive Detectors Spectral Response Range: 1.0 to 3.6 n_m Easy-to-use photoconductive detectors with high responsivity over 3 jim •Room temperature operation Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame


    OCR Scan     		KIRDB0050EA PDF

    B2538-05

    Abstract: B-3179 P3226
    Text: HAMAMATSU CORP ITE D • 4 2 2 'ïb a 'ï 00G2714 3 Ge Photodiodes: Cooled Types Type No. Out­ line No. /P.28\ \ 29/ 6 Package 9 Window Material Characteristics Effective Sensitive A rea S ize Effective Sensitive Area mm (mm2) Measure­ ment Temp. Co) Peak


    OCR Scan     		00G2714 2856K B2536 B2538-01 B2538-02 B2538-03 K1713-01 K1713-02 K1713-03 P1026 B2538-05 B-3179 P3226 PDF

    P903

    Abstract: 4X103 P2051 p819 B1920-01
    Text: HAMAMATSU CORP 1=1E D • 422^ 30^ 0 G 0 2 7 2 2 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) IR Cutoff Wave­


    OCR Scan     		P791-01 P791-02 P791-03 P3207 8X102 5X103 5X102 4X102 P2038-01 P903 4X103 P2051 p819 B1920-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.


    OCR Scan     		C4159 P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA PDF

    B1720-02

    Abstract: B1720-05 B1920-01 B2144-01 B1720 1x10-11 B1919-01 B2144 B1720-04 B1918
    Text: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919 B1919-01 B1920-01


    OCR Scan     		422UCH 2856K B1720-04 B1720-02 B1720-05 B2144 B2144-01 B1918 B1918c. B2614-01, B1920-01 B2144-01 B1720 1x10-11 B1919-01 B1918 PDF

    Infrared photodiode preamplifier

    Abstract: No abstract text available
    Text: Two-color Detectors Broad spectral response range from UV through infrared • Broad spectral response range Two-color detectors cover a broad spectral response range, and are effectively used in such applications as flame monitors, spectro­ photometers and film thickness gauges.


    OCR Scan     		P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA 000M7D3 Infrared photodiode preamplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved.


    OCR Scan     		P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA P2750, PDF

    G5832-01

    Abstract: G5832
    Text: InGaAs PIN Photodiodes Standard Types, Short-wavelength Enhanced Types, etc, High-performance NIR (Near Infrared) detectors with low noise • A wide line-up of device types are available: L a rg e a re a ty p es, sh o rt-w a v e len g th e n h an c e d ty p e s, etc.


    OCR Scan     		P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA 000M7D3 G5832-01 G5832 PDF

    Untitled

    Abstract: No abstract text available
    Text: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 um • Operates at room temperature Since PbS cells operate stably at room tem perature, they are used in a w ide range o f applications such as radiation therm om eters and flam e


    OCR Scan     		KIRDB0048EA KIRDB0049EA KIRDB0050EA KIRDC0005EA PDF

    G5832-21

    Abstract: 4801B G5832-11 G3476-01 B1920-01
    Text: Dimensional Outlines Unit: mm i G5832-02, -03 O G3476-01, etc. WINDOW f 3.0+0 1 G5832-05, etc. f 5 4+0.2 f 5.410.2 f 13 9+0.2 f 4 7 t0 1 <p 4.710.1 ÿ 12.3510.1 f W IN D O W I < M 0.5t01 *4 § ! i WHDA0002EB Q G5832-21, etc. O G5832-11, etc. 4 15.3=0.2 WINDOW


    OCR Scan     		G3476-01, G5832-02, G5832-05, WHDA0002EB G5832-11, G5832-21, KIRDA0031EB G6890-128, B1720-02, G6690 G5832-21 4801B G5832-11 G3476-01 B1920-01 PDF

    thermistor inas

    Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
    Text: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high­ speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.


    OCR Scan     		KI80A0055EA 0G0470 P394A, P3226-02 P791-11 P3207-04 P4115 K1713-01, K3413-01, P3981-01, thermistor inas INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159 PDF