Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P600M DIODE Search Results

    P600M DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    P600M DIODE Price and Stock

    Diotec Semiconductor AG P600M

    Diode - P600 - 1000V - 6A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com P600M 690
    • 1 $0.102
    • 10 $0.102
    • 100 $0.102
    • 1000 $0.0927
    • 10000 $0.0699
    		Buy Now

    P600M DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P600A

    Abstract: P600B P600D P600G P600J P600K P600M
    Text: P600A - P600M SILICON RECTIFIER DIODES D6 PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4 MIN. 0.360 (9.1)


    Original     		PDF P600A P600M UL94V-O MIL-STD-202, P600B P600D P600G P600J P600K P600M

    Untitled

    Abstract: No abstract text available
    Text: TH09/2479 TH97/2478 www.eicsemi.com P600A - P600M IATF 0113686 SGS TH07/1033 SILICON RECTIFIER DIODES D6 PRV : 50 - 1000 Volts FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		PDF TH09/2479 TH97/2478 P600A P600M TH07/1033 UL94V-O MIL-STD-202,

    p600m DIODE

    Abstract: diode P600A diode P600M DC P600A P600B P600D P600G P600J P600K P600M
    Text: P600A – P600M WTE POWER SEMICONDUCTORS Pb 6.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: P-600, Molded Plastic


    Original     		PDF P600A P600M P-600, MIL-STD-202, P-600 p600m DIODE diode P600A diode P600M DC P600A P600B P600D P600G P600J P600K P600M

    P600M

    Abstract: diodes p600a P600A P600B P600D P600G P600J
    Text: TH97/10561QM P600A - P600M TW00/17276EM IATF 0060636 SGS TH07/1033 SILICON RECTIFIER DIODES D6 PRV : 50 - 1000 Volts FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		PDF TH97/10561QM P600A P600M TW00/17276EM TH07/1033 UL94V-O MIL-STD-202, P600M diodes p600a P600B P600D P600G P600J

    Untitled

    Abstract: No abstract text available
    Text: P600A - P600M SILICON RECTIFIER DIODES D6 PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.360 (9.1) 0.340 (8.6)


    Original     		PDF P600A P600M UL94V-O MIL-STD-202,

    JESD22-B102D

    Abstract: J-STD-002B P600 P600A P600B P600M
    Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder Dip 260 °C, 40 seconds Case Style P600


    Original     		PDF P600A P600M 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B P600 P600B P600M

    P600D

    Abstract: diode P600D
    Text: P600A, P600B, P600D, P600G, P600J, P600K, P600M www.vishay.com Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability


    Original     		PDF P600A, P600B, P600D, P600G, P600J, P600K, P600M 22-B106 2002/95/EC. 2002/95/EC P600D diode P600D

    Untitled

    Abstract: No abstract text available
    Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder Dip 260 °C, 40 seconds Case Style P600


    Original     		PDF P600A P600M 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D 08-Apr-05

    P600A

    Abstract: p600m diode JESD22-B102D J-STD-002B P600 P600B P600M
    Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder dip 260 °C, 40 seconds Case Style P600


    Original     		PDF P600A P600M 2002/95/EC 2002/96/EC 08-Apr-05 p600m diode JESD22-B102D J-STD-002B P600 P600B P600M

    Untitled

    Abstract: No abstract text available
    Text: P600M Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage1k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)6 @Temp. (øC) (Test Condition)25’


    Original     		PDF P600M Voltage900m Current25u Current100u

    Untitled

    Abstract: No abstract text available
    Text: P600M-GP Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)6.0 @Temp. (øC) (Test Condition)25’


    Original     		PDF P600M-GP Current10u Current100u

    Untitled

    Abstract: No abstract text available
    Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder dip 260 °C, 40 s Case Style P600


    Original     		PDF P600A P600M 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 08-Apr-05

    J-STD-002

    Abstract: P600 P600A P600B P600M
    Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106


    Original     		PDF P600A P600M 22-B106 2002/95/EC 2002/96/EC AEC-Q101 11-Mar-11 J-STD-002 P600 P600B P600M

    Untitled

    Abstract: No abstract text available
    Text: P600A – P600M WTE POWER SEMICONDUCTORS Pb 6.0A STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: P-600, Molded Plastic


    Original     		PDF P600A P600M P-600, MIL-STD-202, P-600

    Untitled

    Abstract: No abstract text available
    Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106


    Original     		PDF P600A P600M 22-B106 2002/95/EC 2002/96/EC AEC-Q101 2011/65/EU 2002/95/EC. 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: P600A . P600M 6.0 Amp. Glass Passivated Junction Rectifier Current 6.0 A Voltage 50V to 1000 V R P-6 FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop


    Original     		PDF P600A P600M 2011/65/EU 2002/96/EC MIL-STD-750 J-STD-002 JESD22-B102. Jun-14

    Untitled

    Abstract: No abstract text available
    Text: P600A . P600M 6.0 Amp. Glass Passivated Junction Rectifier Current 6.0 A at 60º C Voltage 50V to 1000 V R P-6 FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop


    Original     		PDF P600A P600M 2011/65/EU 2002/96/EC MIL-STD-750 J-STD-002 JESD22-B102. Jul-12

    Untitled

    Abstract: No abstract text available
    Text: P600A . P600M 6.0 Amp. Glass Passivated Junction Rectifier Current 6.0 A at 60º C Voltage 50V to 1000 V R P-6 FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop


    Original     		PDF P600A P600M 2011/65/EU 2002/96/EC MIL-STD-750 J-STD-002 JESD22-B102. Jul-12

    diode p600

    Abstract: P600 diode Diode P600 equivalent P600 PACKAGE P600M diode diode P600A diode p600m P600 P600D JESD22-B102D
    Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 1000 V IFSM 400 A VF 0.9 V, 1.0 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features Mechanical Data • • • •


    Original     		PDF P600A P600M UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 diode p600 P600 diode Diode P600 equivalent P600 PACKAGE P600M diode diode P600A diode p600m P600 P600D JESD22-B102D

    P600J

    Abstract: No abstract text available
    Text: P600A thru P600M Vishay General Semiconductor General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 1000 V IFSM 400 A VF 0.9 V, 1.0 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features Mechanical Data • • • •


    Original     		PDF P600A P600M UL-94V-0 J-STD-002B JESD22-B102D 30-Aug-05 P600J

    Untitled

    Abstract: No abstract text available
    Text: P600A thru P600M Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 1000 V IFSM 400 A VF 0.9 V, 1.0 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features • • • • Low forward voltage drop


    Original     		PDF P600A P600M UL-94V-0 J-STD-002B MIL-STD-750, 28-Apr-05

    P600 diode

    Abstract: P600 P600 PACKAGE P600A P600D P600G P600K P600M
    Text: P600 Series 6A Power Diodes Standard Axial Rectifiers Features: • High surge current capability. • Void-free plastic in a P600 package. • High current operation 6.0 Amperes at TA = 55°C. • Exceeds environmental standards of MIL-S-19500/228. Mechanical Data:


    Original     		PDF MIL-S-19500/228. MIL-STD-202, P600 diode P600 P600 PACKAGE P600A P600D P600G P600K P600M

    P600U

    Abstract: No abstract text available
    Text: P600A . P600U P600A . P600U Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-01 Nominal Current Nennstrom 7,5±0.1 62.5±0.5 Ø 8±0.1 Type Ø 1.2±0.05 Dimensions - Maße [mm] 6A Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original     		PDF P600A P600U UL94V-0 P600A P600B P600D P600G P600J P600U

    IN4001GP

    Abstract: IN4007 IN5399GP IN5399 IN4001 Fagor GP IN-4001 IN5624 IN5627GP P600M
    Text: FAGOR ^ Rectifier Diodes - Quick Guide CURRENT VOLTAGE CASE Plastic IN 4001 GP to IN 4007 GP 1.0 A @ 7 5 °C 50 -s-1000 V DO-41 GP 10 A to GP 10 M 1.0 A @ 55°C 50 -s-1000 V DO-41 BYW 27-50 to BYW 27-1000 1,0 A @ 7 0 °C 50 -¡-1000 V D O -15 IN 5391 GP to


    OCR Scan     		PDF P600M -s-1000 DO-41 DO-41 DO-201 IN4001GP IN4007 IN5399GP IN5399 IN4001 Fagor GP IN-4001 IN5624 IN5627GP P600M