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    P77K Price and Stock

    Nextgen Components YP77K50300S102

    77.503KHz Crystal 20ppm 12.5pF
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    DigiKey YP77K50300S102 Reel 3,000
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    Nextgen Components YP77K50000S102

    77.5KHz Crystal 20ppm 12.5pF
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    DigiKey YP77K50000S102 Reel 3,000
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    Nextgen Components YP77K50000S103

    77.5KHz Crystal 30ppm 12.5pF
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    DigiKey YP77K50000S103 Reel 3,000
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    Nextgen Components YP77K50300S103

    77.503KHz Crystal 30ppm 12.5pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey YP77K50300S103 Reel 3,000
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    TT Electronics plc SQP7-7K5JB15

    Metal Oxide Resistors
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    Mouser Electronics SQP7-7K5JB15
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    P77K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BCM 4709

    Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841
    Text: User’s Manual 16 表紙 78K0R/Fx3 ユーザーズマニュアル ハードウェア編 16 ビット・シングルチップ・マイクロコントローラ 本資料に記載の全ての情報は本資料発行時点のものでありルネサス エレクトロニクスは、


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    78K0R/Fx3 78K0R/FB3: PD78F1804 78F1805 78F1806 78F1807 78F1804 BCM 4709 78F1830 78F1834 78f1835 78f1845 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841 PDF

    BI71

    Abstract: No abstract text available
    Text: HM5283206 Series 131,072-word x 32-bit x 2-bank Synchronous Graphic RAM HITACHI ADE-203-223A Z Rev. 1.0 May. 30, 1996 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided for


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    HM5283206 072-word 32-bit ADE-203-223A Hz/83 Hz/66 BI71 PDF

    Untitled

    Abstract: No abstract text available
    Text: AD VA NC E 12 8 K x 18, 64K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM MT55L128L18F, MT55L64L32F, MT55L64L36F 2.25Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization


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    MT55L128L18F, MT55L64L32F, MT55L64L36F 100-pin MT55L128L18FT-X MT55L64L32FT-X MT55L64L36FT-X x32/36 PDF

    MT55L128

    Abstract: No abstract text available
    Text: AD VA NC E 25 6 K x 18, 12 8 K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM MICRON U TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F 4.5Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization


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    MT55L256L18F, MT55L128L32F, MT55L128L36F 100-PIN MT55L128 PDF

    Untitled

    Abstract: No abstract text available
    Text: AD VA NC E 12 8 K x 18, 64K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM MT55L128L18F, MT55L64L32F, MT55L64L36F 2.25Mb ZBTSRAM 3 .3 V V d d , Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization


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    MT55L128L18F, MT55L64L32F, MT55L64L36F 100-PIN MT55L128L18F PDF

    p77k

    Abstract: ZTE circuit board 1A11BS
    Text: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671A (Z) Rev. 1.1 Feb. 20, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is


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    HB526R864ESN-10H/10/12 304-word 64-bit ADE-203-671A HB526R864ESN 16-Mbit HM5216405TB) 24C02) p77k ZTE circuit board 1A11BS PDF