Nokia lcd
Abstract: Nokia 6100 LCD EVK1101 S1D15G10 SMU4 citizen smd microphone nokia lcd display LCD S1D15G10 10n ceramic capacitor nokia lcd 6100
Text: AVR32134: AVR32 UC3 3D Graphic Rendering Application 32-bit Features Microcontrollers • 3D Rotating Cube Application • Graphical 3D Software Library Engine • EVK1101 Extension-Board Schematics – – – – Application Note Graphical LCD Display Audio Codec
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AVR32134:
AVR32
32-bit
EVK1101
32-bit
128x128
32100C
Nokia lcd
Nokia 6100 LCD
S1D15G10
SMU4
citizen smd microphone
nokia lcd display
LCD S1D15G10
10n ceramic capacitor
nokia lcd 6100
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1N4148
Abstract: 1N914 2N4416 PA15 PA15A
Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA
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PA15A
546-APEX
200mA
200mA
350mA
PA15U
1N4148
1N914
2N4416
PA15
PA15A
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PA15 Application Note
Abstract: No abstract text available
Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA
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PA15A
546-APEX
200mA
SIP02)
350mA
PA15U
PA15 Application Note
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA
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PA15A
546-APEX
200mA
350mA
PA15U
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA
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PA15A
546-APEX
200mA
10-pin
200mA
PA15U
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PA15 Application Note
Abstract: 2N4416 equivalent 10-PIN 1N4148 1N914 2N4416 PA15 PA15A pa15a apex 2N5457-2N5459
Text: ����������������������������������������� ������������ ��������������������������������������������������������������
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200mA
10-PIN
200mA
350mA
1N4148
1N914
2N4416
2N5457-2N5459
PA15U
PA15 Application Note
2N4416 equivalent
PA15
PA15A
pa15a apex
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA
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PA15A
546-APEX
200mA
SIP02)
350mA
PA15U
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA
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PA15A
546-APEX
200mA
350mA
PA15U
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STM32F10xxx
Abstract: AN2569 STM32F10xx PA13 PA15 STM32F STM32F10xxx jtag
Text: AN2569 Application note STM32F10xxx GPIO application examples Introduction This application note is intended to provide practical application examples of the STM32F10xxx GPIO peripheral use. This document, its associated firmware, and other such application notes are written to
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AN2569
STM32F10xxx
AN2569
STM32F10xx
PA13
PA15
STM32F
STM32F10xxx jtag
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TC58NVG0S3ETA00
Abstract: TC58NVG0S3ET tc58nvg0s3eta tc58nvg0s3e tc58nvg DIN2111 PA15 Time22 80XX toshiba TC58NVG
Text: TC58NVG0S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NVG0S3ETA00
TC58NVG0S3E
1024blocks.
2112-byte
2010-05-21C
TC58NVG0S3ETA00
TC58NVG0S3ET
tc58nvg0s3eta
tc58nvg
DIN2111
PA15
Time22
80XX
toshiba TC58NVG
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TC58NYG0S3E
Abstract: TC58NYG0S3ETA00 TC58NYG0S
Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NYG0S3ETA00
TC58NYG0S3E
1024blocks.
2112-byte
2011-03-01C
TC58NYG0S3ETA00
TC58NYG0S
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TC58NVG0S3ETA00
Abstract: TC58NVG0S3ET TC58NVG0S3E tc58nvg0s3eta 2010-01-25C
Text: TC58NVG0S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NVG0S3ETA00
TC58NVG0S3E
1024blocks.
2112-byte
2010-01-25C
TC58NVG0S3ETA00
TC58NVG0S3ET
tc58nvg0s3eta
2010-01-25C
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Untitled
Abstract: No abstract text available
Text: TC58NVG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NVG0S3ETAI0
TC58NVG0S3E
1024blocks.
2112-byte
2011-03-01C
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TC58NVG0S3ETA00
Abstract: TC58NVG0S3ET tc58nvg0s3eta TC58NVG0S3E TC58NVG DIN2111 PA15 2011-03-01C
Text: TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NVG0S3ETA00
TC58NVG0S3E
1024blocks.
2112-byte
2011-03-01C
TC58NVG0S3ETA00
TC58NVG0S3ET
tc58nvg0s3eta
TC58NVG
DIN2111
PA15
2011-03-01C
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TC58NVG0S3EBA
Abstract: TC58NYG0S3EBAI4 TC58NYG0S3E P-TFBGA63-0911-0 TC58NYG0S R/PA15
Text: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NYG0S3EBAI4
TC58NYG0S3E
1024blocks.
2112-byte
2011-03-01C
TC58NVG0S3EBA
TC58NYG0S3EBAI4
P-TFBGA63-0911-0
TC58NYG0S
R/PA15
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TC58NVG0S3EBAI4
Abstract: TC58NVG0S3EBA tc58nvg0s3e tc58nvg0s3eta TC58NVG0S3ETA00 TC58NVG0S3ET
Text: TC58NVG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NVG0S3EBAI4
TC58NVG0S3E
1024blocks.
2112-byte
2011-03-01C
TC58NVG0S3EBAI4
TC58NVG0S3EBA
tc58nvg0s3eta
TC58NVG0S3ETA00
TC58NVG0S3ET
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TC58NYG0S3ETAI0
Abstract: TC58NYG0S
Text: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NYG0S3ETAI0
TC58NYG0S3E
1024blocks.
2112-byte
2011-03-01C
TC58NYG0S3ETAI0
TC58NYG0S
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MTC-20156
Abstract: RC32355 ADSL MTC-20156 mtc diode MTC20156 alcatel mtc MTC-20154 AN-304 MTK-20150 RC32351
Text: Connecting RC32355/RC32351 to the Alcatel ADSL Chipset RC32355/RC32351 Application Note AN-304 By Harold Gomard Notes Revision History July 23, 2001: Initial publication. December 18, 2001: Added RC32351 Background The RC32355/RC32351 Integrated Communications Processor ICP meets the requirements of various
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RC32355/RC32351
AN-304
RC32351
RC32355/RC32351
32-bit
MTC-20156.
MTC-20156
RC32355
ADSL MTC-20156
mtc diode
MTC20156
alcatel mtc
MTC-20154
AN-304
MTK-20150
RC32351
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STM32F100RBT6B
Abstract: stm32-discovery UM0919 fcm1608-0603 STM32 Discovery MB913 FCM1608 ESA8.00000F20D25F STM32F10* I2C stm32 value line discovery pin configuration
Text: UM0919 User Manual STM32VLDISCOVERY STM32 Value line Discovery Introduction The STM32 Value line Discovery evaluation board helps you discover the STM32 Value line features and to develop and share your applications. It is based on an STM32F100RBT6B and includes ST-Link embedded debug tool interface, LEDs and push buttons.
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UM0919
STM32VLDISCOVERY
STM32
STM32F100RBT6B
STM32F100RBT6B
stm32-discovery
UM0919
fcm1608-0603
STM32 Discovery
MB913
FCM1608
ESA8.00000F20D25F
STM32F10* I2C
stm32 value line discovery pin configuration
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STM32F100rb
Abstract: ESA8.00000F20D25F fcm1608-0603 STM32-DISCOVERY FCM1608 5075BMR-05-SM MB913 STM32F100 MC306-G-06Q-32.768 UM0627
Text: UM0919 User Manual STM32VLDISCOVERY STM32 value line Discovery Introduction The STM32 value line Discovery evaluation board helps you discover the STM32 value line features and to develop and share your applications. It is based on an STM32F100RB and includes ST-Link embedded debug tool interface, LEDs and push buttons.
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UM0919
STM32VLDISCOVERY
STM32
STM32F100RB
STM32F100RBT6B
64-pin
ESA8.00000F20D25F
fcm1608-0603
STM32-DISCOVERY
FCM1608
5075BMR-05-SM
MB913
STM32F100
MC306-G-06Q-32.768
UM0627
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zener diode reference guide
Abstract: 150mF capacitor 400V SIP12 package DHW2805S schematic diagram 90v dc motor speed controller Piezo speaker crossover EK06 EK07 EK13 PA44
Text: M I C R O T E C H N O L O G Y Contents Please note: This document contains data sheets released after the July 1998 issue of the Apex Microtechnology Volume 8 Data Book CD-ROM until the publication of this Volume 8.5 Update in February 1999. For additional updates and revisions, please see
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5980reliable,
PA93U
zener diode reference guide
150mF capacitor 400V
SIP12 package
DHW2805S
schematic diagram 90v dc motor speed controller
Piezo speaker crossover
EK06
EK07
EK13
PA44
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Untitled
Abstract: No abstract text available
Text: H IG H V O L T A G E P O W E R O P E R A T IO N A L A M P L IF IE R S A P è PA15 • PA15A c H T T P ://W W W .APEXM ICROTECH.COM 800 546-APEX (800) 546-2 739 FEATURES • HIGH VO LTAGE — 4 5 0 V (± 2 2 5 V ) • LOW COST • LOW Q U IESC EN T CURREN T — 3 .0 m A MAX
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OCR Scan
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PA15A
546-APEX
PA15U
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PDF
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Untitled
Abstract: No abstract text available
Text: \ HIGH VOLTAGE POW ER O PERATIO NAL A M PLIFIERS HP f S f m i c i o t e c i n o l o g v PA15 • PA15A HTT P I/ / W W W .A P EX MI C R0 T E C H . C 0 M 800 546-APEX (800) 5 4 6 - 2 73 9 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST
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OCR Scan
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PA15A
546-APEX
200mA
350mA
PA15U
|
PDF
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS v JÄPBC M I C R O T E C H N O L O G Y PA15 • PA15A http ://W W W .A P E X M IC R D TE C H .O O M 8 0 0 5 4 6 - APEX (8 0 0 ) 5 4 6 -2 7 3 9 FEATURES • HIGH VOLTAGE— 450V (±225V) • LCWOOST • LCW GUI E3CBÍT CURRBJT— 3.0mA MAX
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OCR Scan
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PA15A
200mA
PA15U
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PDF
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