PA1952TE Search Results

PA1952TE Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UPA1952TE-T1-AT		Renesas Electronics Corporation	Pch Dual Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95
UPA1952TE-T1-A		Renesas Electronics Corporation	Pch Dual Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95

PA1952TE Price and Stock

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Renesas Electronics Corporation UPA1952TE-T1-A MOSFET 2P-CH 20V 2A SC95
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPA1952TE-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

PA1952TE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SC-95 Abstract: No abstract text available Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	PA1952 PA1952 G15933JJ1V0DS SC-95
Untitled Abstract: No abstract text available Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA1952 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA1952 is a switching device which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent	Original	PDF	PA1952 PA1952
SC-95 Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1952 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA1952 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent	Original	PDF	PA1952 PA1952 SC-95
SC-95 Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
SC-95 Abstract: No abstract text available Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1952 P チャネルパワーMOS FET スイッチング用 µ PA1952 は，1.8 V 電源系による直接駆動が可能なス外形図（単位：mm）イッチング素子です。	Original	PDF	PA1952 PA1952 PA1952TE SC-95 G15933JJ1V0DS SC-95