nec 151
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm 0.10 M • Low on-state resistance +0.1 spreader. The land size is same as 8-pin TSSOP. 0.25 −0.05 • µ PA2503 has a thin surface mount package with a heat
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PA2503
PA2503
PA2503,
nec 151
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Untitled
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PA2503
G16682JJ1V0DS
M8E02
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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FR 151 diode
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA2503 N チャネル MOS FET スイッチング用 µ PA2503 は,ヒート・スプレッダ内蔵の N チャネル MOS 1 2 3 4 0.10 M 0.10 S 5.8 ±0.1 6.4 ±0.1
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PA2503
PA2503TM
G16682JJ1V0DS
M8E02
FR 151 diode
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm 1 2 3 4 • Low on-state resistance +0.1 spreader. The land size is same as 8-pin TSSOP. 0.25 −0.05 • µ PA2503 has a thin surface mount package with a heat
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PA2503
PA2503
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