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    PA272 Search Results

    PA272 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2724UT1A-E1-AY Renesas Electronics Corporation Switching N-Channel Power MOSFET Visit Renesas Electronics Corporation
    UPA2727T1A-E1-AZ Renesas Electronics Corporation Switching N-Channel Power MOSFET, HVSON, /Embossed Tape Visit Renesas Electronics Corporation
    UPA2725T1A-E1-AY Renesas Electronics Corporation Switching N-Channel Power MOSFET, HVSON, /Embossed Tape Visit Renesas Electronics Corporation
    UPA2726UT1A-E2-AY Renesas Electronics Corporation Switching N-Channel Power MOSFET, HVSON, /Embossed Tape Visit Renesas Electronics Corporation
    UPA2723T1A-E2-AZ Renesas Electronics Corporation Switching N-Channel Power MOSFET, HVSON, /Embossed Tape Visit Renesas Electronics Corporation
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    PA272 Price and Stock

    Texas Instruments OPA2727AIDR

    IC CMOS 2 CIRCUIT 8SOIC
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    DigiKey OPA2727AIDR Cut Tape 3,664 1
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    Mouser Electronics OPA2727AIDR 4,189
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    Newark OPA2727AIDR Cut Tape 1
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    TME OPA2727AIDR 1
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    Chip1Stop OPA2727AIDR 1,324
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    Win Source Electronics OPA2727AIDR 20,000
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    Texas Instruments OPA2725AIDR

    IC CMOS 2 CIRCUIT 8SOIC
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    DigiKey OPA2725AIDR Cut Tape 2,279 1
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    OPA2725AIDR Digi-Reel 2,279 1
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    TME OPA2725AIDR 1
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    Texas Instruments OPA2727AID

    IC CMOS 2 CIRCUIT 8SOIC
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    DigiKey OPA2727AID Tube 402 1
    • 1 $3.38
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    Mouser Electronics OPA2727AID 6,791
    • 1 $3.11
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    Bristol Electronics OPA2727AID 83
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    TME OPA2727AID 1
    • 1 $3.15
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    Win Source Electronics OPA2727AID 20,000
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    Pulse Electronics Corporation PA2729.602NL

    FIXED IND 6UH 14.4A 4.4 MOHM SMD
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    DigiKey PA2729.602NL Tray 389 1
    • 1 $3.14
    • 10 $2.438
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    Mouser Electronics PA2729.602NL
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    Newark PA2729.602NL Bulk 1,050
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    Onlinecomponents.com PA2729.602NL
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    Quest Components PA2729.602NL 38
    • 1 $2.375
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    TTI PA2729.602NL Tray 1,050
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    Avnet Asia PA2729.602NL 9 Weeks 1,260
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    Sager PA2729.602NL 1,050
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    Texas Instruments OPA2725AIDGKT

    IC CMOS 2 CIRCUIT 8VSSOP
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    DigiKey OPA2725AIDGKT Cut Tape 345 1
    • 1 $5.85
    • 10 $4.322
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    OPA2725AIDGKT Digi-Reel 345 1
    • 1 $5.85
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    OPA2725AIDGKT Reel 250 250
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    Rochester Electronics OPA2725AIDGKT 19,250 1
    • 1 $3.15
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    • 100 $2.96
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    TME OPA2725AIDGKT 1
    • 1 $5.86
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    Chip1Stop OPA2725AIDGKT Cut Tape 250
    • 1 $3.75
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    • 100 $2.83
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    Find more PA272 price and stock on Findchips.com

    PA272 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PA2725NL Pulse Electronics Power Transformers - Pulse Transformers - PULSE XFMR 139.5UH Original PDF
    PA2725NLT Pulse Electronics Power Transformers - Pulse Transformers - PULSE XFMR 139.5UH Original PDF
    PA2729.113NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 10.9UH 12.5A 5.8 MOHM Original PDF
    PA2729.173NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 17.1UH 9.9A 9.1 MOHM Original PDF
    PA2729.203NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 20.7UH 8.5A 12 MOHM Original PDF
    PA2729.243NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 24.5UH 8.1A 12.5 MOHM Original PDF
    PA2729.283NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 28.1UH 7.8A 14 MOHM Original PDF
    PA2729.333NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 32.9UH 6.7A 18.5 MOHM Original PDF
    PA2729.383NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 38.3UH 6.5A 19.7 MOHM Original PDF
    PA2729.443NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 44UH 6.2A 21.5 MOHM Original PDF
    PA2729.502NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 4.9UH 16.4A 3.4 MOHM Original PDF
    PA2729.602NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 6UH 14.4A 4.4 MOHM SMD Original PDF
    PA2729.603NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 60.3UH 5.1A 31.5 MOHM Original PDF
    PA2729.802NL Pulse Electronics Power Inductors, Coils, Chokes - Fixed Inductors - FIXED IND 8.3UH 13.3A 5.1 MOHM Original PDF

    PA272 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2722UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2722UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5


    Original     		PDF PA2722UT1A PA2722UT1A PA2722UT1A-E2-AZ PA2722UT1A-E1-AZ

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2722T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 6 4 5 +0.1 0.42 −0.05 RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Thin type surface mount package with heat spreader (8-pin HVSON)


    Original     		PDF PA2722T1A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2725T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 6 4 5 0.42 −0.05 RDS(on)1 = 5.0 mΩ MAX. (VGS = 10 V, ID = 13 A) 7 3 +0.1 Ciss = 2580 pF TYP. (VDS = 15 V, VGS = 0 V) +0.05 −0 • Built-in gate protection diode


    Original     		PDF PA2725T1A

    Untitled

    Abstract: No abstract text available
    Text: SMT POWER INDUCTORS Wire Wound - PA2729.XXXNL Series Height: 12.2mm Max Footprint: 22.2 x 19.1mm Max Current Rating: Over 20Apk Inductance Range: 4.7µH to 60µH Higher Efficiency Version of PA2050.XXXNL Series in same footprint Electrical Specifications @ 25°C - Operating Temperature -55°C to +130°C


    Original     		PDF PA2729 20Apk PA2050 502NL 602NL 802NL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2720AGR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2720AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.


    Original     		PDF PA2720AGR PA2720AGR

    PA2727UT1A

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2727UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) 5 +0.1 6 ±0.2 QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A) • Thin type surface mount package with heat spreader (8-pin HVSON)


    Original     		PDF PA2727UT1A PA2727UT1A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2726UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2726UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5


    Original     		PDF PA2726UT1A PA2726UT1A PA2726UT1A-E2-AZ PA2726UT1A-E1-AZ

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2722UGR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The μPA2722UGR is N-channel MOSFET optimized as low side of synchronous rectifier DC/DC converter. 8 5 1, 2, 3


    Original     		PDF PA2722UGR PA2722UGR PA2722UGR-E2-A

    PA2724UT1A

    Abstract: PA2724U PA2724UT1A-E2-AZ PA2724
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2724UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ MAX. (VGS = 4.5 V, ID = 15 A)


    Original     		PDF PA2724UT1A PA2724UT1A PA2724U PA2724UT1A-E2-AZ PA2724

    PA2722UT1A

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2722UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A)


    Original     		PDF PA2722UT1A 84ems, PA2722UT1A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2728GR SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2728GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer.


    Original     		PDF PA2728GR PA2728GR

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2720AGR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2720AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook


    Original     		PDF PA2720AGR PA2720AGR

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2726T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 6 4 5 0.42 −0.05 RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) 7 3 +0.1 Ciss = 1720 pF TYP. (VDS = 15 V, VGS = 0 V) +0.05 −0 • Built-in gate protection diode


    Original     		PDF PA2726T1A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2721AGR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2721AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook


    Original     		PDF PA2721AGR PA2721AGR PA2721AGR-E1-AT PA2722AGR-E2-AT

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2727UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 +0.1 6 ±0.2 PACKAGE Note 8-pin HVSON 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 4.1 ±0.2 μ PA2727UT1A-E2-AZ 1 0.2 1.0 MAX.


    Original     		PDF PA2727UT1A PA2727UT1A-E2-AZ PA2727UT1A-E1-AZ PA2727UT1A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2724UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2724UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5


    Original     		PDF PA2724UT1A PA2724UT1A PA2724UT1A-E2-AZ PA2724UT1A-E1-AZ

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2725UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5


    Original     		PDF PA2725UT1A PA2725UT1A PA2725UT1A-E1-AZ PA2725UT1A-E2-AZ

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2727T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2727T1A is N-channel MOSFET designed for DC/DC converter applications. 1 RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A)


    Original     		PDF PA2727T1A PA2727T1A

    PA2729

    Abstract: PA2729-802NL
    Text: SMT POWER INDUCTORS Wire Wound - PA2729.XXXNL Series Height: 12.2mm Max Footprint: 22.2 x 19.1mm Max Current Rating: Over 20Apk Inductance Range: 4.7µH to 60µH Higher Efficiency Version of PA2050.XXXNL Series in same footprint Electrical Specifications @ 25°C - Operating Temperature -55°C to +130°C


    Original     		PDF PA2729 20Apk PA2050 PA2729-802NL

    M100

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2723T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2723T1A is N-channel MOSFET designed for low side device 1 6 • Low on-state resistance 4 5 +0.1 • Built-in gate protection diode


    Original     		PDF PA2723T1A PA2723T1A M100

    PA2726UT1A

    Abstract: PA2726UT1A-E1-AY gate voltage control circuit pa2726
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2726UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 11.0 mΩ MAX. (VGS = 4.5 V, ID = 10 A)


    Original     		PDF PA2726UT1A PA2726UT1A PA2726UT1A-E1-AY gate voltage control circuit pa2726

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 5.0 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 13 A)


    Original     		PDF PA2725UT1A PA2725UT1A

    PA2721AGR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2721AGR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2721AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. 8 5 1, 2, 3 : Source


    Original     		PDF PA2721AGR PA2721AGR PA2721AGR-E1-AT PA2721AGR-E2-AT

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2723UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2723UT1A is N-channel MOSFET designed for low side device 1 6 • Low on-state resistance 4 5 +0.1 RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A)


    Original     		PDF PA2723UT1A PA2723UT1A