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    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2722T1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 6 4 5 +0.1 0.42 −0.05 RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Thin type surface mount package with heat spreader (8-pin HVSON)


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