Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2722UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2722UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5
|
Original
|
PDF
|
PA2722UT1A
PA2722UT1A
PA2722UT1A-E2-AZ
PA2722UT1A-E1-AZ
|
PA2722UT1A
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2722UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
|
Original
|
PDF
|
PA2722UT1A
84ems,
PA2722UT1A
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|