SC-95
Abstract: No abstract text available
Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA508TE is a switching device, which can be driven
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PA508TE
PA508TE
SC-95
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4051M
Abstract: SC-95
Text: データ・シート ショットキバリア・ダイオード内蔵 MOS 形電界効果トランジスタ MOS FET with Schottky Barrier Diode µ PA508TE ショットキバリア・ダイオード内蔵 N チャネル MOS FET スイッチング用 µ PA508TE は，2.5 V 電源系による直接駆動が可能なス
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PA508TE
PA508TE
G16627JJ1V1DS
M8E02
4051M
SC-95
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fet with schottky diode
Abstract: SC-95
Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA508TE is a switching device, which can be driven
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Original
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PDF
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PA508TE
PA508TE
fet with schottky diode
SC-95
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SC-95
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SC-95
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PA508TE
PA508TE
G16627JJ1V1DS
M8E02
SC-95
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