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    PACKAGE MARKING IRFL9014 Search Results

    PACKAGE MARKING IRFL9014 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    PACKAGE MARKING IRFL9014 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FL014

    Abstract: MARKING 67A marking code 67A 67a code marking TO-261AA Package code 67a IRFL014
    Text: IRFL9014PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units Conditions -60 ––– ––– V VGS = 0V, ID = 250µA


    Original     		PDF IRFL9014PbF EIA-481 EIA-541. EIA-418-1. FL014 MARKING 67A marking code 67A 67a code marking TO-261AA Package code 67a IRFL014

    IRFL9014PBF

    Abstract: FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630
    Text: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A


    Original     		PDF IRFL9014PbF OT-223 EIA-481 EIA-541. EIA-418-1. IRFL9014PBF FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630

    FL014

    Abstract: FL014 Example AN-994 IRFL9014 IRFL4310
    Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier


    Original     		PDF 0863A IRFL9014 OT-223 OT-223 IRFL014 FL014 FL014 FL014 Example AN-994 IRFL9014 IRFL4310

    FL014

    Abstract: IRFL9014PBF AN-994
    Text: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A


    Original     		PDF IRFL9014PbF OT-223 12-Mar-07 FL014 IRFL9014PBF AN-994

    91195

    Abstract: AN-994 VISHAY SOT LOT CODE International Rectifier TO-261AA
    Text: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A


    Original     		PDF IRFL9014PbF OT-223 08-Mar-07 91195 AN-994 VISHAY SOT LOT CODE International Rectifier TO-261AA

    Untitled

    Abstract: No abstract text available
    Text: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -60 RDS(on) () VGS = -10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 DESCRIPTION G D


    Original     		PDF IRFL9014, SiHFL9014 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFL9014 MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A S Description S O T -2 2 3 The SOT-223 package is designed for surface-mount using


    Original     		PDF IRFL9014 OT-223

    IRFL9014

    Abstract: sot-223 MOSFET AN-994
    Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier


    Original     		PDF 0863A IRFL9014 OT-223 performanc10) IRFL9014 sot-223 MOSFET AN-994

    irfl9014

    Abstract: No abstract text available
    Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier


    Original     		PDF 0863A IRFL9014 OT-223 08-Mar-07 irfl9014

    IRFL9014

    Abstract: AN-994
    Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier


    Original     		PDF 0863A IRFL9014 OT-223 12-Mar-07 IRFL9014 AN-994

    IRFL9014

    Abstract: SiHFL9014 SiHFL9014-E3 IRFL9014TR
    Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFL9014, SiHFL9014 OT-223 OT-223 18-Jul-08 IRFL9014 SiHFL9014-E3 IRFL9014TR

    IRFL9014PBF

    Abstract: package marking IRFL9014
    Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFL9014, SiHFL9014 OT-223 OT-223 12-Mar-07 IRFL9014PBF package marking IRFL9014

    SiHFL9014-GE3

    Abstract: IRFL9014 SiHFL9014 SiHFL9014-E3
    Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 G D G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFL9014, SiHFL9014 OT-223 2002/95/EC 18-Jul-08 SiHFL9014-GE3 IRFL9014 SiHFL9014-E3

    IRFL9014

    Abstract: SiHFL9014 SiHFL9014-E3 IRFL9014PBF
    Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFL9014, SiHFL9014 2002/95/EC OT-223 OT-223 18-Jul-08 IRFL9014 SiHFL9014-E3 IRFL9014PBF

    siliconix sot-223 marking

    Abstract: No abstract text available
    Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFL9014, SiHFL9014 2002/95/EC OT-223 11-Mar-11 siliconix sot-223 marking

    Untitled

    Abstract: No abstract text available
    Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFL9014, SiHFL9014 OT-223 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    irfl9014trpbf

    Abstract: IRFL9014TR SiHFL9014TR-GE3
    Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFL9014, SiHFL9014 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 irfl9014trpbf IRFL9014TR SiHFL9014TR-GE3

    Untitled

    Abstract: No abstract text available
    Text: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 Surface Mount


    Original     		PDF IRFL9014, SiHFL9014 OT-223 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    1N4148

    Abstract: 2SJ326-Z BSP170P DAC7551 DFN-10 IRFL9014 NTF2955 TP2510 XTR111
    Text: XTR111 XRT1 11 SBOS375 − NOVEMBER 2006 Precision Voltage-to-Current Converter/Transmitter FEATURES DESCRIPTION D EASY-TO-DESIGN INPUT/OUTPUT RANGES: The XTR111 is a precision voltage-to-current converter designed for the standard 0mA−20mA or 4mA−20mA


    Original     		PDF XTR111 SBOS375 XTR111 0mA-20mA 4mA-20mA 0mA-20mA, 4mA-20mA, 5mA-25mA 1N4148 2SJ326-Z BSP170P DAC7551 DFN-10 IRFL9014 NTF2955 TP2510

    xtr111

    Abstract: 5mA-25mA P-MOSFET transistor NEC dfn10
    Text: XTR111 XRT1 11 SBOS375 − NOVEMBER 2006 Precision Voltage-to-Current Converter/Transmitter FEATURES DESCRIPTION D EASY-TO-DESIGN INPUT/OUTPUT RANGES: The XTR111 is a precision voltage-to-current converter designed for the standard 0mA−20mA or 4mA−20mA


    Original     		PDF XTR111 SBOS375 0mA-20mA, 4mA-20mA, 5mA-25mA XTR111 0mA-20mA 4mA-20mA P-MOSFET transistor NEC dfn10

    LD67

    Abstract: 1D11A AN-994 IRFL9014 package marking IRFL9014
    Text: PD-9.863 International Ie Rectifier IRFL9014 HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling ^ dss - "6 0 V ^DS on = 0-50É2


    OCR Scan     		PDF IRFL9014 OT-223 IT13tà LD67 1D11A AN-994 package marking IRFL9014

    Untitled

    Abstract: No abstract text available
    Text: PD 9.863A International k ?r Rectifier IRFL9014 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling V d s s = -6 0 V R DS on = 0 -5 0 Q


    OCR Scan     		PDF IRFL9014 OT-223 GD2b44cJ

    mosfet 10d

    Abstract: P-CHANNEL 90A POWER MOSFET AN-994 IRFL9014 1D11A sot-223 body marking A G Q E
    Text: PD-9.863 International Bgg Rectifier IRFL9014 HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling VDSS = -60 V F * D S o n -


    OCR Scan     		PDF IRFL9014 OT-223 mosfet 10d P-CHANNEL 90A POWER MOSFET AN-994 IRFL9014 1D11A sot-223 body marking A G Q E