Untitled
Abstract: No abstract text available
Text: What H EW LETT* mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0635, -0636 Features • Cascadable 50 Q. Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 19.0 dB Typical at 0.5 GHz
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MSA-0635,
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Untitled
Abstract: No abstract text available
Text: H EW LETT mSHMP A C K A R D Cascadable Silicon Bipolar MMIC A m plifiers Technical Data MSA-0435, -0436 Features • Cascadable 50 O Gain Block • 3 dB Bandwidth: DC to 3.8 GHz • 12.5 dBm Typical P t dB a t 1.0 GHz • 8.5 dB Typical Gain a t 1.0 GHz • U nconditionally Stable
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MSA-0435,
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Untitled
Abstract: No abstract text available
Text: Who1 HEW LETT wLfiM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0435, -0436 Features designed for use as a general purpose 50 Q gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applica
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MSA-0435,
MSA-0435
44475A4
5965-9575E
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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114-099R
Q62702-A1006
OT-143
EHA07C
E35bG5
D15G3Ã
DlED30*
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 180 GaAs MMIC • • • • • Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 £1, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8882
0E35bQS
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TRANSISTOR 0835
Abstract: Silicon Bipolar Transistor 35 MICRO-X 0/PJA 0836
Text: | j g | H e w le tt* WLkM P A C K A R D Cascadable Silicon Bipolar MMIC A m plifiers Technical Data MSA-0835, -0836 0.5 GHz and can be used as a high gain transistor below this fre quency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial
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MSA-0835,
TRANSISTOR 0835
Silicon Bipolar Transistor 35 MICRO-X
0/PJA 0836
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T mütiM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0635, -0636 Features • Cascadable 50 £2 Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 19.0 dB Typical at 0.5 GHz
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MSA-0635,
MSA-0635
5965-9585E
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Untitled
Abstract: No abstract text available
Text: Whp% H E W L E T T mLtim PA C K A R D Cascadable Silicon Bipolar MMIC Am plifiers Technical Data MSA-0735, -0736 F eatures • Cascadable 50 Q. Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.4 GHz • 13.0 dB Typical Gain at
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MSA-0735,
MSA-0735
001flb03
5965-9591E
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msa0336
Abstract: No abstract text available
Text: W hoI H EW LETT* mürJkP A C K A R D Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0335, -0336 Features • C ascadable 50 Q Gain B lock • 3 dB Bandwidth: DC to 2.7 GHz • 12.0 dB T ypical Gain at 1.0 GHz • 10.0 dBm Typical P ldB at 1.0 GHz
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MSA-0335,
msa0336
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Marking M2
Abstract: marking M2 SOT23 INFINEON TD-9012 jrf SOT-23
Text: Infineon I êchncÈogiei GaAs MMIC CMY 91 Data Sheet • GaAs mixer with integrated IF-amplifier for mobile communication • Frequency range 0.8 GHz to 2.5 GHz • Very low current consumption 1 mA typ. • Single positive supply voltage • Operating voltage range: 2.7 to 6 V
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OT-23
Q62702-M9
point01-01
CMY91
Marking M2
marking M2 SOT23 INFINEON
TD-9012
jrf SOT-23
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8883
fl235b05
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Untitled
Abstract: No abstract text available
Text: H EW L E T T PA CK A R D Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0135, -0136 Features • Cascadable 50 12 Gain Block • 3 dB Bandwidth: DC to 1.2 GHz purpose 50 Q. gain block. Typical applications include narrow and broad band IF and RF amplifiers
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MSA-0135,
MSA-0136.
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Untitled
Abstract: No abstract text available
Text: TLJM H E W L E T T A SSI PACKARD Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0235, -0236 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.7 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k>l • Cost Effective Ceramic
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MSA-0235,
MSA-0236.
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6-BT
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099
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Q62702-A1017
OT-143
flS35bOS
6-BT
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