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    PAD LCC28 Search Results

    PAD LCC28 Result Highlights (1)

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    TPA3244D2DDW Texas Instruments 40-W Stereo, 100-W Peak PurePath Ultra-HD Pad Down Class-D Amplifier 44-HTSSOP 0 to 70 Visit Texas Instruments

    PAD LCC28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1403A

    Abstract: transistor 1403A LTC1403A LTC1403CMSE LTC1403IMSE
    Text: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation 2.5V Internal Bandgap Reference can be Overdriven


    Original     		PDF LTC1403/LTC1403A 12-Bit/14-Bit, 10-Lead v/LTC1667/LTC1668 12-/14-/16-Bit, 50Msps LTC1592 16-Bit, LT1790-2 OT-23 1403A transistor 1403A LTC1403A LTC1403CMSE LTC1403IMSE

    1403A

    Abstract: 74ACTxx transistor 1403A LTC1403A
    Text: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation –40°C to 125°C Guaranteed Operation


    Original     		PDF LTC1403/LTC1403A 12-Bit/14-Bit, 10-Lead groun66/LTC1667/LTC1668 12-/14-/16-Bit, 50Msps LTC1592 16-Bit, LT1790-2 OT-23 1403A 74ACTxx transistor 1403A LTC1403A

    SN1403

    Abstract: 1403A transistor 1403A LTC1403A LTC1403CMSE LTC1403IMSE b00 sot23 014si 74ACTxx series
    Text: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation 2.5V Internal Bandgap Reference can be Overdriven


    Original     		PDF LTC1403/LTC1403A 12-Bit/14-Bit, 10-Lead v7/LTC1668 12-/14-/16-Bit, 50Msps LTC1592 16-Bit, LT1790-2 OT-23 SN1403 1403A transistor 1403A LTC1403A LTC1403CMSE LTC1403IMSE b00 sot23 014si 74ACTxx series

    Untitled

    Abstract: No abstract text available
    Text: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation –40°C to 125°C Guaranteed Operation


    Original     		PDF LTC1403/LTC1403A 12-Bit/14-Bit, 10-Lead 1403/LTC1403A ADCs7/LTC1668 12-/14-/16-Bit, 50Msps LTC1592 16-Bit,

    diode.18

    Abstract: IRHQ57110 Q 371 Transistor IRHQ53110 IRHQ54110 IRHQ58110 PAD LCC28 46a -30 volt regulator lcc 28 socket 1000K
    Text: PD-94211D RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57110 100V, Quad N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHQ57110 Radiation Level RDS(on) 100K Rads (Si) 0.27Ω ID 4.6A IRHQ53110 300K Rads (Si) 0.27Ω 4.6A IRHQ54110 500K Rads (Si)


    Original     		PDF PD-94211D LCC-28) IRHQ57110 IRHQ53110 IRHQ54110 IRHQ58110 1000K LCC-28 MIL-STD-750, diode.18 IRHQ57110 Q 371 Transistor IRHQ53110 IRHQ54110 IRHQ58110 PAD LCC28 46a -30 volt regulator lcc 28 socket

    Untitled

    Abstract: No abstract text available
    Text: PD-94211D RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57110 100V, Quad N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHQ57110 Radiation Level RDS(on) 100K Rads (Si) 0.27Ω ID 4.6A IRHQ53110 300K Rads (Si) 0.27Ω 4.6A IRHQ54110 500K Rads (Si)


    Original     		PDF PD-94211D LCC-28) IRHQ57110 IRHQ53110 IRHQ54110 IRHQ58110 1000K LCC-28 MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω


    Original     		PDF PD-91781C IRHQ6110 LCC-28) IRHQ63110 LCC-28 MIL-STD-750, 80volt

    IRHQ563110

    Abstract: IRHQ567110
    Text: PD - 94057B IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω


    Original     		PDF 94057B IRHQ567110 LCC-28) IRHQ567110 IRHQ563110 MIL-STD-750, MlL-STD-750, -100V,

    IRHQ563110

    Abstract: IRHQ567110 lcc 20 test socket
    Text: PD-94057C IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω


    Original     		PDF PD-94057C IRHQ567110 LCC-28) IRHQ567110 IRHQ563110 -100V, MIL-STD-750, MlL-STD-750, lcc 20 test socket

    IRHQ6110

    Abstract: IRHQ63110
    Text: PD - 91781A IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si)


    Original     		PDF 1781A IRHQ6110 LCC-28) IRHQ63110 MIL-STD-750, MlL-STD-750, -100V, IRHQ6110 IRHQ63110

    IRHQ6110

    Abstract: IRHQ63110
    Text: PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si)


    Original     		PDF 91781B IRHQ6110 LCC-28) IRHQ63110 MlL-STD-750, -100V, LCC-28 IRHQ6110 IRHQ63110

    IRHQ563110

    Abstract: IRHQ567110
    Text: PD - 94057 IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω


    Original     		PDF IRHQ567110 LCC-28) IRHQ567110 IRHQ563110 MIL-STD-750, MlL-STD-750, -100V, LCC-28

    Untitled

    Abstract: No abstract text available
    Text: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω


    Original     		PDF PD-91781C IRHQ6110 LCC-28) IRHQ63110 80volt MlL-STD-750, -100V,

    Untitled

    Abstract: No abstract text available
    Text: PD-94057C IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω


    Original     		PDF PD-94057C IRHQ567110 LCC-28) IRHQ567110 IRHQ563110 -100V, MIL-STD-750, MlL-STD-750,

    figure of full adder circuit using nor gates

    Abstract: tristate buffer cmos LAH3 carry select adder 16 bit using fast adders full adder circuit using nor gates microprocessor radiation hard M2909
    Text: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ MA9000 Series


    Original     		PDF MA9000 DS3598-3 figure of full adder circuit using nor gates tristate buffer cmos LAH3 carry select adder 16 bit using fast adders full adder circuit using nor gates microprocessor radiation hard M2909

    full adder circuit using nor gates

    Abstract: D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16
    Text: MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the


    Original     		PDF MA9000 DS3598-3 full adder circuit using nor gates D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16

    Untitled

    Abstract: No abstract text available
    Text: ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY FUJITSU M B M 100484A -8 August 1988 Edition 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage


    OCR Scan     		PDF 16384-BIT 00484A 16384-BIT PACKAGE53 F28014S MBM10

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484AAugust 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY The Fujitsu MBM 10484A is fu lly decoded 16384-bit ECL read/write random access memory designed fo r high-speed scratch pad, control and buffe r storage


    OCR Scan     		PDF 16384-BIT MBM10484AAugust 16384-BIT 0484A 28-PAD LCC-28C-F02) 24PLCS) 02ITYP

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 3 7 4 cj7b2 0Qafl3bS A 23E D FU JITSU MBM10484A-10 August 1988 Edition 2.0 T -^ t-2 ^ -0 8 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 10484A is fully decoded 16384-bit E C L read/write random access memory designed for high-speed scratch pad, control and buffer storage


    OCR Scan     		PDF MBM10484A-10 16384-BIT 0484A 08S-1C 374m2 T-46-23-08 28-PAD

    Untitled

    Abstract: No abstract text available
    Text: ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY F U JIT SU M BM 1 0 0 4 8 4 A -8 August 1988 E d itio n 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage


    OCR Scan     		PDF 16384-BIT 00484A 28-PAD

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY M BM 10484A-10 A u g u st 1 9 88 E d itio n 2 .0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM O RY The Fujitsu MBM 10484A is fully decoded 16384-bit E C L read/write random access memory designed for high-speed scratch pad, control and buffer storage


    OCR Scan     		PDF 16384-BIT 0484A-10 16384-BIT 0484A MBM10484A-10 28-PAD LCC-28C-F02)

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY M BM 10484A -8 August 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY T h e F u jits u M B M 1 0 4 8 4 A is f u lly decoded 1 6 3 8 4 -b it E C L re a d /w rite random access m e m o ry designed fo r high-speed scratch pad, c o n tro l and b u ffe r storage


    OCR Scan     		PDF 16384-BIT 0484A

    Untitled

    Abstract: No abstract text available
    Text: PROGRAMMABLE FU JITSU SCHOTTK Y 16384-BIT MB 7134E-W READ ONLY MEMORY November 1985 Edition 1.0 SCHOTTKY 16384-BIT DEAP PROM 4096 WORDS x 4 BITS This Fujitsu MB 7T34-W is high speed Schottky TT L electrically field pro­ grammable read only memory organized as 4096 words by 4 bits. With threestate outpus on the MB 7134-W, memory expansion is simple.


    OCR Scan     		PDF 16384-BIT 7134E-W 7T34-W 134-W, DIP-20C-C03 8C-A01) 28-PAD LCC-28C-A02)

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal C M O S /S O S ga te arrays is a fo u r tra n s is to r ‘c e ll-u n it’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the


    OCR Scan     		PDF DS3598-3 MA9000 D0242bl 3Sx24nnnxxxxx 37bflS22 00242b2