Untitled
Abstract: No abstract text available
Text: 19-Serie 6000-A_20-Serie 6000-A 21/11/12 14:06 Page110 6000 series Toggle switches for military applications Distinctive features and specifications ❑ Suitable for military or industrial applications ❑ Sealing and locking lever options available A ❑ Matt black finish on actuator and bushing
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500VDC
30VDC
062DIA)
098DIA)
196DIA)
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59013 h 331
Abstract: 59014 c 331 comcode 105 736 490 fcs 9013 GR-253-CORE JT-G704 JT-G706 TMXL28155 TR-62411 59014 c
Text: Preliminary Data Sheet, Rev 2 June, 2002 TMXL28155 SupermapperLite 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3, DS2, and T1/E1/J1 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.
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TMXL28155
x28/x21
Monitor0-712-4106)
DS01-298BBAC-2
DS01-298BBAC-1)
59013 h 331
59014 c 331
comcode 105 736 490
fcs 9013
GR-253-CORE
JT-G704
JT-G706
TR-62411
59014 c
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ad7753
Abstract: AD7754 circuit for ad7753 AD7750 AD7751 AD7755
Text: TRANSFER FUNCTION Fout=V1*V2*Gain/Vref Fout=V1*V2*Gain/Vref Fout=V1*V2*Gain/Vref AD7753 AD7754 AD7755 1:04 PM Fout=V1*V2*Gain/Vref AD7751 12/28/99 Fout=V1*V2*Gain/Vref AD7750 Power Meter, Vout=Frequency MODEL NUMBER 0.2 0.2 0.2 0.3 0.2 0.3 0.2 0.2 0.3 0.2
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AD7753
AD7754
AD7755
AD7751
AD7750
PAGE-110
ad7753
AD7754
circuit for ad7753
AD7750
AD7751
AD7755
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NT5CB256M8GN
Abstract: NT5CC256M8GN NT5CB256M8GN-DI NT5CC256M8GN-D NT5CC512M4GN NT5CC512M4GN-CG NT5CB256M8GN-CG "2Gb DDR3 SDRAM" NT5C NT5CB256M8
Text: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard Programmable Burst Length: 4, 8 Power Supply 8n-bit prefetch architecture VDD = VDDQ = 1.35V -0.0675V/+0.1V Output Driver Impedance Control
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NT5CB512M4GN
NT5CB256M8GN
NT5CC512M4GN
NT5CC256M8GN
78Balls
NT5CC256M8GN
NT5CB256M8GN-DI
NT5CC256M8GN-D
NT5CC512M4GN-CG
NT5CB256M8GN-CG
"2Gb DDR3 SDRAM"
NT5C
NT5CB256M8
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Untitled
Abstract: No abstract text available
Text: POWER MANAGEMENT: ENERGY METER MODEL Measurement Error NUMBER G=1 G=16 Dynamic range CH 1=500 % reading % reading Phase Phase Error Error Lead 40° Lag 60° PF=+.8 PF=-.5 ° ° Fclk Mhz Band Inst’ous Output Width Power -3dB fout KHz KHz Power Cali bration
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AD7750
AD7751A
AD7755A
AD7756
AD7754
PAGE-110
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Untitled
Abstract: No abstract text available
Text: 32-bit TX System RISC TX03 Series TMPM330FYWFG Rev 1.02 Semiconductor & Storage Products Company 2013-08-05 Table of Contents Table of Contents. i
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32-bit
TMPM330FYWFG
Page457
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NT5CC256
Abstract: NT5CB256M8GN- CG
Text: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature 1.35V -0.0675V/+0.1V & 1.5V ± 0.075V JEDEC Output Driver Impedance Control Standard Power Supply Differential bidirectional data strobe 8 Internal memory banks (BA0- BA2)
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NT5CB512M4GN
NT5CB256M8GN
NT5CC512M4GN
NT5CC256M8GN
78Balls
NT5CC256
NT5CB256M8GN- CG
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C200H lk201 OMRON Operation Manual
Abstract: c200h-lk201 JW-22CU PLC SHARP JW-22CU mitsubishi plc FX SERIES OMRON C200H CPU 42 OMRON C200H mitsubishi cable pc a plc A1s OMRON plc programming console manual A1SJ71UC24-R4
Text: Version 1.0 Produced in July 2002 Compact image sensor camera IV-S30 Series Controller: IV-S31MX/S32MX/S33MX User's Manual Function and Operation Remote keypad: IV-S30RK1 Controller: IV-S31MX/32MXS33MX Standard camera: IV-S30C1 High-speed camera: IV-S30C3
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IV-S30
IV-S31MX/S32MX/S33MX
IV-S30RK1
IV-S31MX/32MXS33MX
IV-S30C1
IV-S30C3
IV-S30C2
IV-S30C4
IV-S31MX/S32MX/
C200H lk201 OMRON Operation Manual
c200h-lk201
JW-22CU
PLC SHARP JW-22CU
mitsubishi plc FX SERIES
OMRON C200H CPU 42
OMRON C200H
mitsubishi cable pc a plc A1s
OMRON plc programming console manual
A1SJ71UC24-R4
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Untitled
Abstract: No abstract text available
Text: 15-Serie 1200-A_20-Serie 1200-A 21/11/12 16:41 Page107 1200 series Momentary pushbutton switches - round plunger Distinctive features and specifications ❑ Butt action contacts, double break ❑ NF EN 61058-1 , UL and CSA approved B2 ELECTRICAL SPECIFICATIONS
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15-Serie
1200-A
20-Serie
200-A
Page107
250VAC
125VAC
24VDC
12VDC
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MOSFET-48V
Abstract: powr607 emmc schematic 4700uF mosfet-n EIA96 ISPPAC-POWR607 eMMC DC-DC 5V-3,3V ISPPAC-POWR1014
Text: Power 2 You 電源管理・制御の完全ガイド ボードレベルの電源管理機能 学習できるハウツーには以下が含まれます： »» 電源管理コストの低減 »» システムの信頼性を向上 »» 回路基板を改版するリスクの軽減
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HS-12V
MOSFET8sec32sec
12VNMOSFET
12V12V
page-126-
32sec2sec
ispPAC-POWR1220AT8
AldecActive-HDLHDL9-10
MOSFET-48V
powr607
emmc schematic
4700uF
mosfet-n
EIA96
ISPPAC-POWR607
eMMC
DC-DC 5V-3,3V
ISPPAC-POWR1014
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NT5CC256
Abstract: No abstract text available
Text: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature 1.35V -0.0675V/+0.1V & 1.5V ± 0.075V JEDEC Output Driver Impedance Control Standard Power Supply Differential bidirectional data strobe 8 Internal memory banks (BA0- BA2)
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NT5CB512M4GN
NT5CB256M8GN
NT5CC512M4GN
NT5CC256M8GN
78Balls
NT5CC256
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NT5CB64M16FP-DH
Abstract: NT5CB64M16FP nt5cb64m16 NT5CB128M8FN-DH NT5CC64M16FP NT5CB128M8FN NT5CB64M1
Text: 1Gb DDR3 F-die SDRAM NT5CB128M8FN/NT5CB64M16FP NT5CC128M8FN/NT5CC64M16FP Preliminary Feature Table 1: CAS Latency Frequency Speed Bins -DH/DHI* -EJ* -FK* DDR3/L-1600 DDR3-1866 DDR3-2133 CL10 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK Avg.
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NT5CB128M8FN/NT5CB64M16FP
NT5CC128M8FN/NT5CC64M16FP
DDR3/L-1600
DDR3-1866
DDR3-2133
NT5CB64M16FP-DH
NT5CB64M16FP
nt5cb64m16
NT5CB128M8FN-DH
NT5CC64M16FP
NT5CB128M8FN
NT5CB64M1
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AD7755
Abstract: AD7750 AD7751
Text: POWER MANAGEMENT: PRODUCT TO FREQUENCY CONVERTERS, POWER METER MODEL NUMBER TRANSFER FUNCTION Measurement Error G=1 G=16 Dynamic range CH 1=500 % reading % reading Measurement Error G=1 G=16 Dynamic range CH 1=1000 % reading % reading Phase Phase Error Error
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AD7750
AD7751
AD7755
PAGE-110
AD7755
AD7750
AD7751
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Untitled
Abstract: No abstract text available
Text: N2CB4G40BN / N2CB4G80BN / N2CB4G16BP N2CC4G40BN / N2CC4G80BN / N2CC4G16BP 4Gb DDR3 SDRAM B-Die Feature VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard 8n-bit prefetch architecture Power Supply Output Driver Impedance Control VDD = VDDQ = 1.35V -0.0675V/+0.1V
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N2CB4G40BN
N2CB4G80BN
N2CB4G16BP
N2CC4G40BN
N2CC4G80BN
N2CC4G16BP
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LT 7659
Abstract: Lucent SLC 2000 installation LTE DL Channel Encoder transistor fcs 9012 GR-253-CORE JT-G704 JT-G706 TMXF28155 TR-62411 21153 specification update
Text: Preliminary Data Sheet May 2001 TMXF28155 Super Mapper 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3/E3, DS2, T1/E1/J1, and DS0/E0/J0 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.
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TMXF28155
x28/x21
GR-253-CORE,
GR-499,
TR-62411,
JT-G704,
JT-G706,
JT-G707,
JT-I431-a,
DS01-167PDH
LT 7659
Lucent SLC 2000 installation
LTE DL Channel Encoder
transistor fcs 9012
GR-253-CORE
JT-G704
JT-G706
TR-62411
21153 specification update
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NT5CB256M8GN-CG
Abstract: NT5CB256M8GN NT5CC512M4GN-CG NT5CC256M8GN-D NT5CB256M8GN- CG NT5CC256M8GN-DI
Text: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard Programmable Burst Length: 4, 8 Power Supply 8n-bit prefetch architecture VDD = VDDQ = 1.35V -0.0675V/+0.1V Output Driver Impedance Control
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NT5CB512M4GN
NT5CB256M8GN
NT5CC512M4GN
NT5CC256M8GN
78Balls
NT5CB256M8GN-CG
NT5CC512M4GN-CG
NT5CC256M8GN-D
NT5CB256M8GN- CG
NT5CC256M8GN-DI
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Untitled
Abstract: No abstract text available
Text: 32-bit TX System RISC TX03 Series TMPM330FDWFG Rev 1.02 Semiconductor & Storage Products Company 2013-08-05 Table of Contents Table of Contents. i
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32-bit
TMPM330FDWFG
Page457
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