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    PAL MACROCELLS Search Results

    PAL MACROCELLS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EP610DM-30 Rochester Electronics LLC EP610 - Classic Family EPLD, Logic,300 Gates,16 Macrocells Visit Rochester Electronics LLC Buy
    EP910LI-30-G Rochester Electronics LLC EP910 - Classic Family EPLD, Logic,450 Gates,24 Macrocells Visit Rochester Electronics LLC Buy
    EP610LI-25 Rochester Electronics LLC EP610 - Classic Family EPLD, Logic,300 Gates,16 Macrocells Visit Rochester Electronics LLC Buy
    EP610LI-30 Rochester Electronics LLC EP610 - Classic Family EPLD, Logic,300 Gates,16 Macrocells Visit Rochester Electronics LLC Buy
    EP910PI-30 Rochester Electronics LLC EP910 - Classic Family EPLD, Logic,450 Gates,24 Macrocells Visit Rochester Electronics LLC Buy

    PAL MACROCELLS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GAL16V8

    Abstract: GAL16VP8 GAL18V10 GAL20RA10 GAL20V8 GAL20VP8 GAL20XV10 GAL22V10 GAL26CV12
    Text: Introduction to GAL Device Architectures Base Products - Aimed at providing superior design alternatives to bipolar PLDs, these five architectures replace over 98% of all bipolar PAL devices. The GAL16V8 and GAL20V8 replace forty-two different PAL devices.


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    PDF GAL16V8 GAL20V8 GAL22V10, GAL20RA10, GAL20XV10 100ms) GAL16V8 GAL16VP8 GAL18V10 GAL20RA10 GAL20VP8 GAL22V10 GAL26CV12

    Pal programming 22v10

    Abstract: GAL16V8 GAL16VP8 GAL18V10 GAL20RA10 GAL20V8 GAL20VP8 GAL20XV10 GAL22V10 GAL26CV12
    Text: Introduction to GAL Device Architectures Base Products - Aimed at providing superior design alternatives to bipolar PLDs, these five architectures replace over 98% of all bipolar PAL devices. The GAL16V8 and GAL20V8 replace forty-two different PAL devices.


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    PDF GAL16V8 GAL20V8 GAL22V10, GAL20RA10, GAL20XV10 100ms) Pal programming 22v10 GAL16V8 GAL16VP8 GAL18V10 GAL20RA10 GAL20VP8 GAL22V10 GAL26CV12

    palce programming Guide

    Abstract: PALCE Programmer palce programmer schematic amd programmers guide amd part marking Pal programming PAL22V10 PALCE26V12 PALCE26V12H-7 AMD PALCE
    Text: FINAL COM’L: H-7/10/15/20 IND: H-10/15/20 PALCE26V12 Family 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 115 mA at high


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    PDF H-7/10/15/20 H-10/15/20 PALCE26V12 28-Pin 16072E-18 palce programming Guide PALCE Programmer palce programmer schematic amd programmers guide amd part marking Pal programming PAL22V10 PALCE26V12H-7 AMD PALCE

    22V10D

    Abstract: 22V10D-10 22V10D-15 PALC22V10D PALC22V10D-7JC PALCE22V10 V10D
    Text: For new designs, please refer to the PALCE22V10. PALC22V10D Flash Erasable, Reprogrammable CMOS PAL D Features D D Advanced secondĆgeneration PAL arĆ D D 5 ns tCO Low power 5 ns tS Ċ 90 mA max. commercial 10 ns 7.5 ns tPD testing Functional Description


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    PDF PALCE22V10. PALC22V10D 133MHz ALC22V10D 22V10D 22V10D-10 22V10D-15 PALC22V10D PALC22V10D-7JC PALCE22V10 V10D

    United Technologies Microelectronics

    Abstract: No abstract text available
    Text: Military Standard Products UT22VP10 Radiation-Hardened Universal PAL Product Brief UNITED TECHNOLOGIES MICROELECTRONICS CENTER October 1993 □ Low operating current Ipo: 60ma + 1.5ma/MHz FEATURES D High speed Universal PAL - tp p : 25ns maximum CMOS 30ns maximum (TTL)


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    PDF UT22VP10 30MHz United Technologies Microelectronics

    Pal 009b

    Abstract: signal path designer
    Text: COM’L z \ Advanced Micro Devices PALCE26V12H-15/20 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pln versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 105 mA at high


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    PDF PALCE26V12H-15/20 28-Pin 28-pln 28-pln. Pal 009b signal path designer

    22V10D

    Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
    Text: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military


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    PDF PALC22V10D 100-MHz 83-MHz PALC22V10D 15DMB PALC22V10D- PALC22V10Dâ 15KMB PALC22V10D-15LMB 22V10D PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D-10JC

    Untitled

    Abstract: No abstract text available
    Text: _ PALC22V10D SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device • Advanced second-generation PAL ar­ chitecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for


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    PDF PALC22V10D 133-MHz 300-Mil) 24-Lead 28-Lead 24-Lead 28-Square

    T Flip-Flop

    Abstract: No abstract text available
    Text: Comi * PAL22IP6-25 Interface Protocol Asynchronous Cell IPAC PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • PAL device optimized for asynchronous Interface protocol applications ■ High currant driving capability—48 mA/64 mA ■ Six unique edge-actlvaled flip-flops


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    PDF PAL22IP6-25 74FXXX) PAL20R8B. PAL20R8B 74FXXX T Flip-Flop

    palc22v10d programming guide

    Abstract: No abstract text available
    Text: Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for electrical erasabllity and reprogrammablllty


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    PDF 133-MHz 110-MHz 15-ns 25-ns PALC22V10D-15JC PALC22V10D-15PC PALC22V1OD-15JI PALC22V10D-15PI PALC22V1 OD-15DMB palc22v10d programming guide

    Untitled

    Abstract: No abstract text available
    Text: Revision: Tuesday, January 5,1993 C.- PALC22V10D CYPRESS -SEMICONDUCTOR • Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)


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    PDF PALC22V10D 133-MHz 110-MHz 15-ns PALC22V10Bâ 25-ns PALC22V10-25

    Untitled

    Abstract: No abstract text available
    Text: PALCE26V12H-20/25 28-Pin EE C M O S Versatile PAL Device DISTINCTIVE CHARACTERISTICS 28-pin versatile PAL® programmable logic device archi­ tecture Electrically erasable CMOS technology provides half power only 105 mA at high speed (20 ns propagation


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    PDF PALCE26V12H-20/25 28-Pin 0372A 1757-007A

    pal22v10

    Abstract: al22v10 AMPAL22V10 5962-86053013X
    Text: Am PAL22V 10 24-Pin IMOX Programmable Array Logic PAL Distinctive Characteristics • Second-generation PAL device architecture • • • • Increased logic power — up to 22 inputs and 10 outputs Increased product terms — average 12 per output


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    PDF PAL22V 24-Pin 28-pin PAL22V10 AmPAL22V10 pal22v10 al22v10 5962-86053013X

    AM 22V10

    Abstract: Resistor Fuse 4.91 AMD 22V10 ampal
    Text: AmPAL*22V10 24-Pin IMOX Programmable Array Logic PAL • • Second-generation PAL architecture Increased logic power — up to 22 inputs and 10 outputs Increased product terms — average 12 per output Variable product term distribution improves ease of use


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    PDF 22V10 24-Pin 28-pin SP0-300 FAM52 AmPAL22V10 AM 22V10 Resistor Fuse 4.91 AMD 22V10 ampal

    Untitled

    Abstract: No abstract text available
    Text: •> CMOS Programmable g o u ld Electrically Erasable Logic Device AM I «Semiconductors PEEL 20C610 Features • Application Versatility — Replaces random SSI/MSI logic — Emulates 24-pin bipolar PAL devices — Convert 24-pin PAL and EPLD designs with


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    PDF 20C610 24-pin PALC20G10 PEEL20CG10

    L2496

    Abstract: No abstract text available
    Text: Military Standard Products UT22VP10 Universal RAD pal Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER April 1996 FEATURES □ VDD: 5.0 volts ±10% □ High speed Universal RAD pal - tpj : 20ns, 25ns maximum - □ Radiation-hardened process and design; total dose irradia­


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    PDF UT22VP10 33MHz L-2-4-96 L2496

    PAL 006A

    Abstract: IC PAL 006A
    Text: c o m ’l a PALCE26V12H-20/25 Advanced Micro Devices 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pln versatile PAL programmable logic device architecture ■ Two clock Inputs for Independent functions ■ Electrically erasable CMOS technology


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    PDF 28-pln PALCE26V12H-20/25 28-Pin PALCE26V12 PAL 006A IC PAL 006A

    Untitled

    Abstract: No abstract text available
    Text: PALCE26V12H-15/20 Advanced Micro Devices 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 105 mA at high speed (15 ns propagation delay)


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    PDF PALCE26V12H-15/20 28-Pin 2350-024A

    74Fxxx

    Abstract: PAL22IP6
    Text: Com'l a PAL22IP6-25 Interface Protocol Asynchronous Cell IPAC PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • PAL device optimized for asynchronous Interface protocol applications ■ High currant driving capability— 48 mA/64 mA ■ Six unique edge-activated flip-flops


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    PDF PAL22IP6-25 74FXXX) PAL20R8B. 74FXXX PAL20R8B PAL22IP6

    MULTIPLEXER IC

    Abstract: palce programming Guide AMD PALCE
    Text: FINAL COM’L: H-7/10/15/20 IND: H-10/15/20 Advanced Micro Devices PALCE26V12 Family 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Two clock inputs for independent functions


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    PDF H-7/10/15/20 H-10/15/20 PALCE26V12 28-Pin 16072E-18 MULTIPLEXER IC palce programming Guide AMD PALCE

    22V10D-10

    Abstract: 22V10D MIL-STD-1835 V10D-9 R1238 ay 9j CERAMIC LEADLESS CHIP CARRIER K73 Package PALC22V10D R2170
    Text: fax id: 6007 For new designs, please refer to the PALCE22V10. PALC22V10D CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)


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    PDF PALCE22V10. PALC22V10D 133-MHz 22V10D-10 22V10D MIL-STD-1835 V10D-9 R1238 ay 9j CERAMIC LEADLESS CHIP CARRIER K73 Package PALC22V10D R2170

    Untitled

    Abstract: No abstract text available
    Text: •> g o u l d A M I * Semiconductors CMOS Programmable Electrically Erasable Logic Device PEEL 20CG10 Features • A pplication Versatility — Replaces random SSI/MSI logic — Emulates 24-pin bipolar PAL devices — Convert 24-pin PAL and EPLD designs with


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    PDF 20CG10 24-pin PALC20G10 PEEL20CG10 PEEL22CG10

    VP16V8

    Abstract: VP20V8 VP20V8E-25 VP16V8E VP20V8E-35 ST 6395 BI VP16V8E-25 VP20V8E 16H8 gal programming algorithm
    Text: VP16V8E VP20V8E € GENERIC ARRAY LOGIC FEATURES • VP16V8E replaces most 20-pin bipolar PAL devices • Power-on reset for all registers • High-speed programming algorithm • VP20V8E replaces most 24-pin bipolar PAL devices • JEDEC approved TTL compatible


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    PDF VP16V8E VP20V8E VP16V8E 20-pin VP20V8E 24-pin 8100-046-a-23-036 VP16V8 VP20V8 VP20V8E-25 VP20V8E-35 ST 6395 BI VP16V8E-25 16H8 gal programming algorithm

    Untitled

    Abstract: No abstract text available
    Text: Final COM’L El Advanced Micro Devices PALCE26V12H-20/25 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ 28-pln versatile PAL programmable logic device architecture Electrically erasable CMOS technology provides half power only 105 mA at high


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    PDF PALCE26V12H-20/25 28-Pin 28-pln PALCE26V12