panasonic dual band vco
Abstract: No abstract text available
Text: High-performance GaAs switch IC with Panasonic’s thinnest package Small packaged DPDT GaAs switch IC for general RF use Overview A high RF performance GaAs switch IC is packed into Panasonic’s thinnest package of 0.4mm thickness. The product realizes minimization and loss improvement for
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500MHz
M00663AE
panasonic dual band vco
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LN57
Abstract: LN58 fl37
Text: PANASONIC INDL/ELEKÍSEÍIIJ 7EC D | t,T3Efi54 6932852 PANASONIC INDLtELECTRONIC 7 f? h lU C 7 h D - ^ 0 ^ 1 W X □ □ □ ‘iñBL. 72C 0 9 8 3 Ó ñ J~ _ _ D _ _ LN5 7 T-Hi-ll LN57 GaAs -f K /G a A s Infrared Light Emitting Diode
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950nm
18deg.
18deg
LN57
LN58
fl37
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JIS-K-8839
Abstract: JISK8839 JISK-8839 agos
Text: lIMÜitfÜiiül Panasonic Panasonic KAGOSHIMA MATSUSHITA ELECTRONICS CO., LTD. _3 KB-H-022-018B 1, Scope of application This specification applies to series. ‘ LNJ211R8ARU’of Thru-the-Board type chip LED 2, Ratings and characteristics Refer to attached specification standard.
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KB-H-022-018B
LNJ211R8ARU
JIS-K-8839
JISK8839
JISK-8839
agos
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PN126S
Abstract: CQ 1265 126S 2856K
Text: PANASONIC INDL/ELEK-CSENI3- 7SC D | LTBHfiSH □ □Olfl'iG 3 | ~ j 6932852 PANASONIC IND L*ELECTRO N IC 72C 09890 D PN126S T -W l'W P N 1 2 6 S '> 'J 3 > N P N h 7 y i / X Z / S i N P N Phototransistor # : 5'fciiiW # lflffl/F o r Optical Control Systems
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PN126S
PN126S
CQ 1265
126S
2856K
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PN202S
Abstract: ELE Panasonic 72C09897
Text: PANASONIC INDL/ELEK-CSEMI} 7SC D | b c]35flS4 ODDTflìt. 4 T ~ 6932852 PANASONIC IN DL ,E LE CT RO NIC ““ 72C 09896 PN 150 7 r 7 h II X 7 h Q - H " k> ( PN 150 '> i zi > NPN Th: h h -7 > ^ $ / S i NPN Phototransistor Optical Control Systems • ^ /F e a tu re s
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ICE PN-27724
Abstract: N9010 PN103 R9010 glass lens phototransistor PNI06
Text: PANASONIC INDL/ELEKÍSEÍ1I} 7EC D | 1^35054 □ □CHflbM 5 |~~_ 6 9 3 2 8 5 2 PANASONIC INDL*ELECTRONIC 72C 0 9 8 6 4 7r^hX b^hD PNI 02 T- Hl- PNI 02 '> U a > N P N & h h 7 / Si N P N Phototransistor # ^ S U Í ® ^ flffl// For Optical Control Systems
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100lx
ICE PN-27724
N9010
PN103
R9010
glass lens phototransistor
PNI06
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Untitled
Abstract: No abstract text available
Text: Panasonic Semiconductor Laser LNC702PS Tentative GaAIAs Semiconductor Laser • Features • Low threshold current • Stable single horizontal mode oscillation • Low drooping ■ Applications • Optical data processing devices • Laser beam printers
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LNC702PS
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Untitled
Abstract: No abstract text available
Text: Panasonic Semiconductor Laser LNC704PS GaAlAs Semiconductor Laser • Features • Low threshold current • Stable single horizontal mode oscillation • Long lifetime, high reliability ■ Applications • Optical data processing devices • Optical disk memory
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LNC704PS
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LNC704PS
Abstract: optical CW LASER
Text: Panasonic Semiconductor Laser LNC704PS GaAlAs Semiconductor Laser • Features • Low threshold current • Stable single horizontal mode oscillation • Long lifetime, high reliability ■ Applications • Optical data processing devices • Optical disk memory
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LNC704PS
LNC704PS
optical CW LASER
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LNC702PS
Abstract: No abstract text available
Text: Panasonic Semiconductor Laser LNC702PS Tentative GaAIAs Semiconductor Laser • Features • Low threshold current • Stable single horizontal mode oscillation • Low drooping ■ Applications • Optical data processing devices • Laser beam printers
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LNC702PS
LNC702PS
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Untitled
Abstract: No abstract text available
Text: Panasonic Semiconductor Laser LNC705PS GaAlAs Semiconductor Laser • Features • • • • Low threshold current Stable single horizontal mode oscillation Long lifetime, high reliability High optical power output: 50mW ■ Applications • Optical data processing devices
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LNC705PS
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ON1003
Abstract: No abstract text available
Text: Panasonic Transmissive Photosensors Photo Interrupters ON1003 Photo Interrupter For contactless SW, object detection • Outline O N I003 is an u ltram iniature, highly reliable transm ittive photosensor in which a high efficiency GaAs infrared light emitting
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ON1003
ON1003
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transistor w10
Abstract: ON1004 interrupters
Text: Panasonic Transmissive Photosensors Photo Interrupters ON1004 Photo Interrupter For contactless SW, object detection • Outline O N I004 is an u ltram iniature, highly reliable transm ittive photosensor in which a high efficiency GaAs infrared light emitting
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ON1004
ON1004
transistor w10
interrupters
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ON1113
Abstract: No abstract text available
Text: Panasonic Transmissive Photosensors Photo Interrupters ON1113 Photo Interrupter For contactless SW, object detection • Outline ON1113 is a small size photocoupler package consisting of a high efficiency GaAs infrared light em itting diode is used as the light
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ON1113
ON1113
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors
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LNA2801L
0102Q.
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 900 nm (typ.)
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LN172
100mA
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Untitled
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN01037B GaAs IC with built-in ferroelectric Unit : mm For transmitting preamplifier of cellular phone Other communication equipment • Features • Low-noise amplifier with AGC • Single, positive power supply • f= 0.9GHz Absolute Maximum Ratings
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GN01037B
-15dBm,
948MHz
50kHz
21kHz
100nH
50kHz
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PN102
Abstract: No abstract text available
Text: Panasonic Phototransistors PN102 Silicon NPN Phototransistor For optical control systems • Features • High sensitivity • W ide spectral responsivity, suited for detecting GaAs LEDs • Low dark current : ICEO = 5 nA typ. • Fast response : tr, tf = 3 |as (typ.)
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PN102
PN102
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors
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100mA
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IR Blue Light infrared
Abstract: LN66
Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors
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100mA
IR Blue Light infrared
LN66
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Scans-00328
Abstract: PN150L
Text: Panasonic Phototransistors PN150L Silicon NPN Phototransistor U nit : mm For optical control systems • Features • High sensitivity • Wide spectral responsivity, suited for detecting GaAs LEDs • Low dark current • Small size, thin side-view type package
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PN150L
Scans-00328
PN150L
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ON2170
Abstract: high sensitivity reflective phototransistor
Text: Panasonic Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor • Outline Unit : mm Mark for indicating anode side C0.5 O N2170 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated
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ON2170
ON2170
high sensitivity reflective phototransistor
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Untitled
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN1051 GaAs N-Channel IC For distributing amplifier • Features • With input-side matching-circuit • Low consumption current typ 3.6mA • Good reverse isolation (separation) ■ Absolute Maximum Ratings (Ta = 25°C) Param eter
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GN1051
1053MHz
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN175 GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 900 nm (typ.)
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LN175
100mA
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