IFSM
Abstract: MA22D26
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% below conventional our products reduces power consumption and enhances
|
Original
|
MA22D15(
MA22D21(
MA22D23
MA22D26(
MA22D28
MA2Q705
MA2Q735
MA2Q736
MA2Q737
MA2Q738
IFSM
MA22D26
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% lower than our conventional products reduces power consumption and enhances equipment efficiency.
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes
|
Original
|
OD-123)
OD-106)
|
PDF
|
MA28
Abstract: MA3X028 MA3X0280A MA3X0280B MA3X028TA MA3X028WA MA3X028WB SC-59A PANASONIC MA28
Text: Varistors MA3X028 Series MA28 Series Silicon epitaxial planar type variable resistor Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 1 + 0.1 3 Unit 6 V MA3X0280A/B Forward current (DC) MA3X028WA/WB IFM 150 mA 100 70 Power dissipation PD 150 mW Junction temperature
|
Original
|
MA3X028
MA3X0280A/B
MA3X028WA/WB
MA3X028TA/TB
MA28
MA3X0280A
MA3X0280B
MA3X028TA
MA3X028WA
MA3X028WB
SC-59A
PANASONIC MA28
|
PDF
|
MA116
Abstract: MA2J116
Text: Switching Diodes MA2J116 MA116 Silicon epitaxial planar type Unit : mm • Small S-mini type package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) Rating Unit VR 40 V Peak reverse voltage VRM 40 V Average forward current
|
Original
|
MA2J116
MA116)
MA116
MA2J116
|
PDF
|
MA133
Abstract: MA3S133
Text: Switching Diodes MA3S133 MA133 Silicon epitaxial planar type 1.00±0.05 0.80±0.05 Unit : mm 1.60+0.05 –0.03 For switching circuits 0.12+0.03 –0.01 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Single Peak forward current
|
Original
|
MA3S133
MA133)
MA133
MA3S133
|
PDF
|
MA152WA
Abstract: MA152WK MA3X152D MA3X152E panasonic ma diodes sc-59 Marking
Text: Switching Diodes MA3X152D, MA3X152E MA152WA, MA152WK Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 Unit 80 V Peak reverse voltage VRM 80 V IF 100 mA IFM 225 Forward current Single
|
Original
|
MA3X152D,
MA3X152E
MA152WA,
MA152WK)
MA3X152D:
MA3X152D
SC-59
MA152WA
MA152WK
MA3X152E
panasonic ma diodes sc-59 Marking
|
PDF
|
MA2S111
Abstract: SC-79
Text: Switching Diodes MA2S111 Silicon epitaxial planar type Unit : mm For switching circuits 1.60 ± 0.05 • Features + 0.05 0.2 + 0.05 0.80 − 0.03 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward current IF(AV) 100
|
Original
|
MA2S111
SC-79
MA2S111
SC-79
|
PDF
|
MA116
Abstract: MA2J116
Text: Switching Diodes MA2J116 MA116 Silicon epitaxial planar type Unit : mm For general purpose 0.7±0.1 1.25±0.1 0.35±0.1 • Features 1 • Small S-mini type package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) 2 0.5±0.1
|
Original
|
MA2J116
MA116)
MA116
MA2J116
|
PDF
|
MA129
Abstract: MA6X129
Text: Rectifier Diodes MA6X129 MA129 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 Reverse voltage (DC) VR 200 V Peak reverse voltage VRM 200 V IO 100 mA Output current Single Triple Repetitive peak forward current Single 1.9 ± 0.2 0.95 0.95
|
Original
|
MA6X129
MA129)
MA129
MA6X129
|
PDF
|
MA196
Abstract: MA2C196 PANASONIC MA2C196
Text: Switching Diodes MA2C196 MA196 Silicon epitaxial planar type Unit : mm For switching circuits φ 0.45 max. COLORED BAND INDICATES CATHODE Unit VR 50 V Repetitive peak reverse voltage VRRM 50 V Average forward current IF(AV) 100 mA Repetitive peak forward current
|
Original
|
MA2C196
MA196)
DO-34
MA196
MA2C196
PANASONIC MA2C196
|
PDF
|
LN52
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm
|
Original
|
|
PDF
|
Panasonic super a series
Abstract: MA133 MA3S133
Text: Switching Diodes MA3S133 MA133 Silicon epitaxial planar type 1.00±0.05 0.80±0.05 Unit : mm 1.60+0.05 –0.03 For switching circuits 0.12+0.03 –0.01 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Single Peak forward current
|
Original
|
MA3S133
MA133)
Panasonic super a series
MA133
MA3S133
|
PDF
|
MA122
Abstract: MA6X122
Text: Switching Diodes MA6X122 MA122 Silicon epitaxial planar type Unit : mm For switching circuit + 0.2 2.8 − 0.3 + 0.25 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V current*1 4 3 IF 100 mA IFM 225 mA Non-repetitive peak forward surge current*1,2
|
Original
|
MA6X122
MA122)
MA122
MA6X122
|
PDF
|
|
|
MA3X786
Abstract: MA786 panasonic ma diodes sc-59 Marking
Text: Schottky Barrier Diodes SBD MA3X786 (MA786) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Repetitive peak reverse voltage Peak forward current VR 30 V VRRM 30 V IFM 300 mA Average forward current IF(AV) 100 mA Non-repetitive peak forward surge current*
|
Original
|
MA3X786
MA786)
O-236
SC-59
MA3X786
MA786
panasonic ma diodes sc-59 Marking
|
PDF
|
MA2Z785
Abstract: MA785
Text: Schottky Barrier Diodes SBD MA2Z785 (MA785) Silicon epitaxial planar type Unit : mm • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short
|
Original
|
MA2Z785
MA785)
25nductor
MA2Z785
MA785
|
PDF
|
MA862
Abstract: YHP4191A MA4X862
Text: Band Switching Diodes MA4X862 MA862 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 0.5 R 35 V IF 100 mA 75 mA/Unit Operating ambient temperature Topr −25 to +85 °C Storage temperature
|
Original
|
MA4X862
MA862)
MA862
YHP4191A
MA4X862
|
PDF
|
MA3X787
Abstract: MA787 panasonic ma diodes sc-59 Marking
Text: Schottky Barrier Diodes SBD MA3X787 (MA787) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Repetitive peak reverse voltage Peak forward current VR 50 V VRRM 50 V IFM 300 mA Average forward current IF(AV) 100 mA Non-repetitive peak forward surge current*
|
Original
|
MA3X787
MA787)
O-236
SC-59
MA3X787
MA787
panasonic ma diodes sc-59 Marking
|
PDF
|
AN5858K
Abstract: diy rov F5025 V021 V120 circuit diagram of chroma 252 panasonic TV tuner
Text: Panasonic, ICs for TV AN5858K Color-TV AV-Switch 1C • Overview The AN5858K is an AV switch 1C. It switches five inputs Vf SY, SC, R, and L , and two outputs (TV and monitor). It has the most S- input-pins in the industry and can sup port many kind of high grade multi-function TV.
|
OCR Scan
|
AN5858K
AN5858K
42-Pin
SDIP042-P-0600A)
10kHz,
b132ASE
diy rov
F5025
V021
V120
circuit diagram of chroma 252
panasonic TV tuner
|
PDF
|
GaAs 850 nm Infrared Emitting Diode
Abstract: LN52
Text: Panasonic Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • • • • High-power output, high-efficiency : PQ = 6 mW typ. Wide directivity, matched for external optical systems : 0 = 100 deg.
|
OCR Scan
|
100mA
GaAs 850 nm Infrared Emitting Diode
LN52
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN52 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 6 mW typ. • W ide directivity, matched for external optical systems : 0 = 100 deg.
|
OCR Scan
|
|
PDF
|
LNJ219R9ARA
Abstract: No abstract text available
Text: I t e m Symbol C o n d i t i o n Typ Limi t Min Max 2. 5 100 2.2 Forward Voltage I p= 1 0 m A 1. 72 v K Reverse Leakage Current V R= 3 V IR Luminous Intensity *2 Ip = 1 0 m A DC 4.2 Io Peak Emission Wavelength X p I F= 1 0 m A D C 655 Spectral Line Half Width A 1
|
OCR Scan
|
LNJ219R9ARA
LNJ219R9ARA
|
PDF
|
LNJ319G9TRA
Abstract: No abstract text available
Text: Checked Approved Desi gned Y P E In d i c a to r s M I E R 'r L I A L GaP I N E A tta c h e d S O L U T E P O U A B M A X T M U M -10 *1 Tfp 50 R A T I N G S mW mA C O N D I T I O N t e m Symbol t S p e c VR T opr T s tg •1 -3 0 -+ 8 5 -•10— + 100 mA
|
OCR Scan
|
LNJ319G9TRA
KB-H-022-0
LNJ319G9TRA
|
PDF
|
tyco+igbt+module+25A
Abstract: No abstract text available
Text: Panasonic AN79L00/AN79L00M Series 3-pin Negative Output Voltage Regulator 100mA Type • Overview The AN79L00 series is 3-pin fixed negative output volt age regulator. Stabilized fixed output voltage is obtained from unstable DC input voltage without using any external components.
|
OCR Scan
|
AN79L00/AN79L00M
100mA
AN79L00
100mA.
AN79L05
tyco+igbt+module+25A
|
PDF
|
