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    PARALLEL CONNECTION OF MOSFETS Search Results

    PARALLEL CONNECTION OF MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    PARALLEL CONNECTION OF MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    parallel connection of MOSFETs

    Abstract: powersystems
    Text: PSDE_Dec_toCD.qxd 12/20/04 5:34 PM Page 20 PACKING TECHNOLOGY Figure1. Recommended circuit for parallel connection of power modules. recommendations described above must be rigorously applied. It makes sense to take great care with the external parallel conditions, assuming that


    Original     		PDF 108mm, sepa21 parallel connection of MOSFETs powersystems

    APT0405

    Abstract: TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG
    Text: Application note APT0405 November 2004 Parallel Connection of IGBT and MOSFET Power Modules. Serge Bontemps Product Manager Advanced Power Technology Europe Chemin de Magret 33700 Merignac, France Introduction Several dice are usually connected in parallel within high current power modules.


    Original     		PDF APT0405 APT0405 TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG

    transistor ld3

    Abstract: White LED Drivers max9184 CLS5D11HP-150NC chip led 3016 JMK107BJ225MA MAX1984 MAX1984ETP MAX1985 MAX1985ETP
    Text: 19-2761; Rev 0; 1/03 KIT ATION EVALU E L B A AVAIL Ultra-High-Efficiency White LED Drivers Features ♦ Synchronous Step-Up Regulator Achieves >95% Efficiency Internal Switch and Synchronous Rectifier Eliminates External MOSFETs and Diodes 1MHz Fixed Frequency Minimizes Component


    Original     		PDF 10kHz MAX1984 MAX1985 MAX1986 MAX1984/MAX1985/MAX1986 transistor ld3 White LED Drivers max9184 CLS5D11HP-150NC chip led 3016 JMK107BJ225MA MAX1984ETP MAX1985 MAX1985ETP

    Untitled

    Abstract: No abstract text available
    Text: 19-2761; Rev 0; 1/03 KIT ATION EVALU E L B A AVAIL Ultra-High-Efficiency White LED Drivers Features ♦ Synchronous Step-Up Regulator Achieves >95% Efficiency Internal Switch and Synchronous Rectifier Eliminates External MOSFETs and Diodes 1MHz Fixed Frequency Minimizes Component


    Original     		PDF switching16 MAX1984/MAX1985/MAX1986

    parallel connection of MOSFETs

    Abstract: IRF130 Mosfet application driver circuit MOSFET dynamic parameters
    Text: Requirements for Power MOSFETs Connected in Parallel 1 Introduction and Objectives For the field of applications for power FETs to be expanded, e.g. in arc welding equipment, as a substitute switching relay, in uninterruptible power supplies and in motor controllers, it


    Original     		PDF

    ZM12

    Abstract: No abstract text available
    Text: YR80.241 24-28V, 80A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ For N+1 and 1+1 Redundant Systems Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes Only 50mV Voltage Drop at 40A Output Current


    Original     		PDF 4-28V, DS-YR80 241-EN ZM12

    parallel connection of MOSFETs

    Abstract: series connection of mosfet SMT4004 SUB75N03-04 SUB75N04-05L HUF76145S3S IRFBL3703 STB80NF03L-04 STV160NF03L Summit Microelectronics
    Text: SUMMIT Application Note 20 MICROELECTRONICS, Inc. Preliminary SMT4004 Quad Power Supply Controller/Trakker SELECTING CURRENT SENSE RESISTORS AND POWER MOSFETS USING KELVIN SENSE CONNECTIONS FOR ACCURATE CURRENT MEASUREMENT Recommended sense resistor vendor: IRC — International Resistive Co., Inc. http://www.irctt.com/


    Original     		PDF SMT4004 parallel connection of MOSFETs series connection of mosfet SMT4004 SUB75N03-04 SUB75N04-05L HUF76145S3S IRFBL3703 STB80NF03L-04 STV160NF03L Summit Microelectronics

    AN2842

    Abstract: parallel connection of MOSFETs how mosfets connect parallel parallel mosfet
    Text: AN2842 Application note Paralleling of power MOSFETs in PFC topology Introduction The current handling capability demands on power supply systems to meet high load current requirements and provide greater margins for overload and reliability, often exceed


    Original     		PDF AN2842 AN2842 parallel connection of MOSFETs how mosfets connect parallel parallel mosfet

    SFH551V

    Abstract: IGD515EI SFH551V equivalent series-connected IGBTs IGD515E SFH551 siemens sfh551v application MTBF SIEMENS traction HFBR2521 15-V
    Text: IGD508E/IGD515E Data Sheet & Application Manual Intelligent Gate Drivers for IGBTs and Power MOSFETs Description The intelligent gate drivers of the IGD type series are single-channel drive components designed for IGBTs and power MOSFETs. They were developed specifically for the


    Original     		PDF IGD508E/IGD515E IGD508EI/EN IGD515EI/EN SFH551V IGD515EI SFH551V equivalent series-connected IGBTs IGD515E SFH551 siemens sfh551v application MTBF SIEMENS traction HFBR2521 15-V

    AN941

    Abstract: IRF1404 FET IRF1404 FET model parallel MOSFET Transistors parallel connection of MOSFETs Measurement of stray inductance Analysis of Avalanche Behaviour for Paralleled MOSFETs
    Text: Analysis of Avalanche Behaviour for Paralleled MOSFETs By Jingdong Chen, Scott Downer and Anthony Murray and David Divins International Rectifier Co. 222 Kansas Street, El Segundo, CA 90245 As presented at SAE World Congress 2004 I: Abstract: In this study, an avalanche extension to existing


    Original     		PDF AN941 Asssure2000 AN941 IRF1404 FET IRF1404 FET model parallel MOSFET Transistors parallel connection of MOSFETs Measurement of stray inductance Analysis of Avalanche Behaviour for Paralleled MOSFETs

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY YRH80.241 12-28V, 80A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ For N+1 and 1+1 Redundant Systems Suitable for Power Supplies with HiccupPLUS Overload Behavior Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes


    Original     		PDF YRH80 2-28V, DS-YRH80 241-EN-preliminary

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET Construction and Characteristics Power MOSFET in Detail 2. Construction and Characteristics Since Power MOSFETs operate principally as majority carrier devices, adverse influences are relatively small magnitude or importance. This is in contrast to the situation with minority carrier


    Original     		PDF

    NCV7512

    Abstract: AEC-Q100 NCV7512FTG NCV7512FTR2G NCV7513 NID9N05CL
    Text: NCV7512 FLEXMOSt Quad Low-Side Pre-Driver The NCV7512 programmable four channel low- side MOSFET driver is one of a family of FLEXMOSTM automotive grade products used for driving logic- level MOSFETs. The product is controllable by any combination of SPI Serial Peripheral Interface or parallel


    Original     		PDF NCV7512 NCV7512 NCV7512/D AEC-Q100 NCV7512FTG NCV7512FTR2G NCV7513 NID9N05CL

    mosfet ms 1307

    Abstract: NCV7512 NCV7512FTG NCV7512FTR2G NCV7513 NID9N05CL Q100 MS 1307 mosfet
    Text: NCV7512 FLEXMOSt Quad Low-Side Pre-Driver The NCV7512 programmable four channel low−side MOSFET driver is one of a family of FLEXMOSTM automotive grade products used for driving logic−level MOSFETs. The product is controllable by any combination of SPI Serial Peripheral Interface or parallel


    Original     		PDF NCV7512 NCV7512 NCV7512/D mosfet ms 1307 NCV7512FTG NCV7512FTR2G NCV7513 NID9N05CL Q100 MS 1307 mosfet

    pcb design software

    Abstract: Active resistance current measurement circuit schematic AN606 AN826 Si4730EY Si6862DQ SUM50N03-13LC SUM60N08-07C parallel connection of MOSFETs
    Text: AN606 Vishay Siliconix Current-Sensing Power MOSFETs Kandarp Pandya INTRODUCTION Vishay Siliconix current-sensing power MOSFETs offer a simple means of incorporating a protection feature into an electronic control circuit and avoiding catastrophic failures


    Original     		PDF AN606 curre08-07C AN826 17-Dec-03 pcb design software Active resistance current measurement circuit schematic AN606 AN826 Si4730EY Si6862DQ SUM50N03-13LC SUM60N08-07C parallel connection of MOSFETs

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY YRH40.481 24-56V, 40A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ For N+1 and 1+1 Redundant Systems Suitable for Power Supplies with HiccupPLUS Overload Behavior Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes


    Original     		PDF YRH40 4-56V, DS-YRH40 481-EN

    IXAN0017

    Abstract: 0017 spot welder circuit diagram IXBH40N160 MOSFET 1600v 100A IXLH45N160 high frequency welder circuit diagram TC4431 application MOSFET 1200v 30a 108nC
    Text: New 1600V BIMOSFET™ Transistors Open Up New Applications IXAN0017 by Ralph E. Locher IXYS Corporation Santa Clara, CA Introduction There are many applications today using high voltage MOSFETs and IGBTs, which would benefit from a higher voltage part. Examples are


    Original     		PDF IXAN0017 IXBH40N160, IXAN0017 0017 spot welder circuit diagram IXBH40N160 MOSFET 1600v 100A IXLH45N160 high frequency welder circuit diagram TC4431 application MOSFET 1200v 30a 108nC

    Severns

    Abstract: Oscillation mosfet zener diode capacitance ED31 diode POWER MOSFET APPLICATION NOTE parallel connection of MOSFETs R. Severns "Controlling Oscillation in APT9901 Zener Diode frequency Zener Diode high frequency applications
    Text: Eliminating Parasitic Oscillation between Parallel MOSFETs Based in part on a paper presented at Power Electronics Technology 2003 conference titled “Issues with Paralleling MOSFETs and IGBTs” by Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology


    Original     		PDF APT9901, ED-31, Severns Oscillation mosfet zener diode capacitance ED31 diode POWER MOSFET APPLICATION NOTE parallel connection of MOSFETs R. Severns "Controlling Oscillation in APT9901 Zener Diode frequency Zener Diode high frequency applications

    sensefet

    Abstract: an10322 BUK7C10-75AITE current sense BUK7105-40AIE BUK7107-55AIE BUK7108-40AIE BUK7109-75AIE BUK7905-40AI BUK7905-40AIE
    Text: AN10322_1 Current Sensing Power MOSFETs Rev.01.00 — 09 September 2004 Application note Document information Info Content Keywords Current Sensing, PowerMOS, SenseFET, Sense Ratio, Sense Resistor, Virtual Earth Abstract Current Sensing power MOSFETs provide an effective means of


    Original     		PDF AN10322 sensefet BUK7C10-75AITE current sense BUK7105-40AIE BUK7107-55AIE BUK7108-40AIE BUK7109-75AIE BUK7905-40AI BUK7905-40AIE

    BUK7105-40AIE

    Abstract: sensefet an10322 BUK7C08-55AITE BUK7C10-75AITE BUK7107-55AIE BUK7108-40AIE BUK7109-75AIE BUK7905-40AI BUK7905-40AIE
    Text: AN10322_1 Current Sensing Power MOSFETs Rev.01.00 — 09 September 2004 Application note Document information Info Content Keywords Current Sensing, PowerMOS, SenseFET, Sense Ratio, Sense Resistor, Virtual Earth Abstract Current Sensing power MOSFETs provide an effective means of


    Original     		PDF AN10322 BUK7105-40AIE sensefet BUK7C08-55AITE BUK7C10-75AITE BUK7107-55AIE BUK7108-40AIE BUK7109-75AIE BUK7905-40AI BUK7905-40AIE

    an10322

    Abstract: BUK7105-40AIE BUK7107-55AIE BUK7108-40AIE BUK7109-75AIE BUK7905-40AI BUK7905-40AIE BUK7C06-40AITE BUK7C08-55AITE BUK7C10-75AITE
    Text: AN10322 Current sensing power MOSFETS Rev. 02 — 24 June 2009 Application note Document information Info Content Keywords Current sensing, PowerMOS, senseFET, sense ratio, sense resistor, virtual earth Abstract Current sensing power MOSFETs provide an effective means of


    Original     		PDF AN10322 AN10322 BUK7105-40AIE BUK7107-55AIE BUK7108-40AIE BUK7109-75AIE BUK7905-40AI BUK7905-40AIE BUK7C06-40AITE BUK7C08-55AITE BUK7C10-75AITE

    Untitled

    Abstract: No abstract text available
    Text: Enpirion Power Datasheet EN6360QI 8A PowerSoC Highly Integrated Synchronous DC-DC Buck with Integrated Inductor Description Features The EN6360QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs


    Original     		PDF EN6360QI 8x11x3mm EN6360QI

    Untitled

    Abstract: No abstract text available
    Text: Enpirion Power Datasheet EN6360QI 8A PowerSoC Highly Integrated Synchronous DC-DC Buck with Integrated Inductor Description Features The EN6360QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs


    Original     		PDF EN6360QI 8x11x3mm EN6360QI

    EN6360

    Abstract: EN6360QI
    Text: EN6360QI 8A Synchronous Highly Integrated DC-DC PowerSoC Description Features The EN6360QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs and compensation to provide the smallest solution size in


    Original     		PDF EN6360QI 8x11x3mm EN6360QIs EN6360