AN918 MOTOROLA
Abstract: AN-918 AN9320 General Electric SCR Manual 6th edition TA84-5 SCR Handbook, General electric AN918 Paralleling Power MOSFETs in Switching Applications Rudy Severns 1/AN918 MOTOROLA "scr manual"
Text: Parallel Operation Of Semiconductor Switches Application Note June 1993 Figure 1 . The dynamic area is only a fraction of the total waveform, but it is by far the most important when it comes to parallel operation. In uninterruptable power supplies demands for current handling capability to meet load current In uninterruptable power
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IBJT
Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
Text: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but
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AN9319
IBJT
SCR Handbook, General electric
AN9319
Rudy Severns
5 hp DC motor speed control using scr
d50026
"General Electric SCR Manual" 6th
AN918 MOTOROLA
14v 10A mosfet
TA84-5
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Siliconix Handbook
Abstract: General Electric SCR Manual 6th edition "General Electric SCR Manual" 6th AN918 MOTOROLA Rudy Severns TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications Severns SCR Manual paralleling mosfet
Text: Parallel Operation Of Semiconductor Switches Application Note /Title AN75 3 Subect Paralel peraion Of emionuctor witch ) Autho ) Keyords Interil orpoation, emionuctor, vaanche nergy ated, witch ng ower uplie , ower witch ng June 1993 In uninterruptable power supplies demands for current handling capability to meet load current In uninterruptable power
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"General Electric SCR Manual" 6th
Abstract: General Electric SCR Manual 6th edition SCR Applications Handbook TA84-5 SCR Handbook, General electric AN918 MOTOROLA Rudy Severns HEXFET Power MOSFET designer manual "scr manual" AN-918
Text: Harris Semiconductor No. AN9320 Harris Power June 1993 Parallel Operation Of Semiconductor Switches Author: Sebald R. Korn, Consulting Applications Engineer In uninterruptable power supplies demands for current handling capability to meet load current requirements plus margins for overload and reliability purposes often exceed the
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AN9320
AN-918,
TA84-5)
"General Electric SCR Manual" 6th
General Electric SCR Manual 6th edition
SCR Applications Handbook
TA84-5
SCR Handbook, General electric
AN918 MOTOROLA
Rudy Severns
HEXFET Power MOSFET designer manual
"scr manual"
AN-918
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DE275X2-501N16A
Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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DE275X2-501N16A
DE275X2-501N16A
"RF MOSFETs"
RF POWER MOSFET
275X2-501N16A
DE275X2
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Untitled
Abstract: No abstract text available
Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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DE275X2-501N16A
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DE275X2-102N06A
Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 102N06A 400P 10-DOF 275X2-102N06A ssd2
Text: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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DE275X2-102N06A
DE275X2-102N06A
102N06A
mosfet pair DE275X2-102N06A
1000 volt mosfet
50W rf power transistor 100MHz
RF POWER MOSFET TRANSISTOR 100MHz
400P
10-DOF
275X2-102N06A
ssd2
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DE275X2-102N06A
Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 102N06A 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt
Text: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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DE275X2-102N06A
DE275X2-102N06A
102N06A
mosfet pair DE275X2-102N06A
1000 volt mosfet
"RF MOSFETs"
400P
275x2-102n06a
rf power mosfet
MOSFET 50 amp 1000 volt
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AN2842
Abstract: parallel connection of MOSFETs how mosfets connect parallel parallel mosfet
Text: AN2842 Application note Paralleling of power MOSFETs in PFC topology Introduction The current handling capability demands on power supply systems to meet high load current requirements and provide greater margins for overload and reliability, often exceed
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AN2842
AN2842
parallel connection of MOSFETs
how mosfets connect parallel
parallel mosfet
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Untitled
Abstract: No abstract text available
Text: Enpirion Power Datasheet EN6360QI 8A PowerSoC Highly Integrated Synchronous DC-DC Buck with Integrated Inductor Description Features The EN6360QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs
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EN6360QI
8x11x3mm
EN6360QI
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Untitled
Abstract: No abstract text available
Text: Enpirion Power Datasheet EN6360QI 8A PowerSoC Highly Integrated Synchronous DC-DC Buck with Integrated Inductor Description Features The EN6360QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs
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EN6360
Abstract: EN6360QI
Text: EN6360QI 8A Synchronous Highly Integrated DC-DC PowerSoC Description Features The EN6360QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs and compensation to provide the smallest solution size in
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EN6360QI
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EN6360
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GRM31CR61A476ME19L
Abstract: EN63A0QI EN63A0 0600V EN63
Text: EN63A0QI 12A Synchronous Highly Integrated DC-DC PowerSoC Description Features The EN63A0QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs and compensation to provide the smallest solution size in
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EN63A0QI
10x11x3mm
76-pin
EN63A0QIs
GRM31CR61A476ME19L
EN63A0
0600V
EN63
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EN63A0QI
Abstract: No abstract text available
Text: Enpirion Power Datasheet EN63A0QI 12A PowerSoC Highly Integrated Synchronous Buck With Integrated Inductor Description Features The EN63A0QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs and
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EN63A0QI
10x11x3mm
76-pin
EN63A0QI
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ZM12
Abstract: No abstract text available
Text: YR80.241 24-28V, 80A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE For N+1 and 1+1 Redundant Systems Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes Only 50mV Voltage Drop at 40A Output Current
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4-28V,
DS-YR80
241-EN
ZM12
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parallel connection of MOSFETs
Abstract: IRF130 Mosfet application driver circuit MOSFET dynamic parameters
Text: Requirements for Power MOSFETs Connected in Parallel 1 Introduction and Objectives For the field of applications for power FETs to be expanded, e.g. in arc welding equipment, as a substitute switching relay, in uninterruptible power supplies and in motor controllers, it
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AN941
Abstract: IRF1404 FET IRF1404 FET model parallel MOSFET Transistors parallel connection of MOSFETs Measurement of stray inductance Analysis of Avalanche Behaviour for Paralleled MOSFETs
Text: Analysis of Avalanche Behaviour for Paralleled MOSFETs By Jingdong Chen, Scott Downer and Anthony Murray and David Divins International Rectifier Co. 222 Kansas Street, El Segundo, CA 90245 As presented at SAE World Congress 2004 I: Abstract: In this study, an avalanche extension to existing
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AN941
Asssure2000
AN941
IRF1404 FET
IRF1404
FET model
parallel MOSFET Transistors
parallel connection of MOSFETs
Measurement of stray inductance
Analysis of Avalanche Behaviour for Paralleled MOSFETs
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DRV8402
Abstract: snubber full bridge
Text: Not Recommended for New Designs DRV8402 SLES222 – FEBRUARY 2009 www.ti.com Dual Full Bridge PWM Motor Driver Check for Samples: DRV8402 FEATURES 1 • • • • • • • • • • High-Efficiency Power Stage up to 96% with Low RDS(on) MOSFETs (80 mΩ at TJ = 25°C)
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DRV8402
SLES222
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snubber full bridge
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DRV8402
Abstract: No abstract text available
Text: Not Recommended for New Designs DRV8402 SLES222 – FEBRUARY 2009 www.ti.com Dual Full Bridge PWM Motor Driver Check for Samples: DRV8402 FEATURES 1 • • • • • • • • • • High-Efficiency Power Stage up to 96% with Low RDS(on) MOSFETs (80 mΩ at TJ = 25°C)
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DRV8402
SLES222
36-pin
DRV8402
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DRV8402
Abstract: No abstract text available
Text: Not Recommended for New Designs DRV8402 SLES222 – FEBRUARY 2009 www.ti.com Dual Full Bridge PWM Motor Driver Check for Samples: DRV8402 FEATURES 1 • • • • • • • • • • High-Efficiency Power Stage up to 96% with Low RDS(on) MOSFETs (80 mΩ at TJ = 25°C)
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DRV8402
SLES222
DRV8402
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DRV8402
Abstract: No abstract text available
Text: Not Recommended for New Designs DRV8402 SLES222 – FEBRUARY 2009 www.ti.com Dual Full Bridge PWM Motor Driver Check for Samples: DRV8402 FEATURES 1 • • • • • • • • • • High-Efficiency Power Stage up to 96% with Low RDS(on) MOSFETs (80 mΩ at TJ = 25°C)
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DRV8402
SLES222
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IXAN0068
Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability
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IXAN0068
6710405B2,
IXAN0068
IXTK46N50L
Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs
1000V 2A BJT
1200W MOSFET power
IXTH24n50l
mosfet modern applications
400V linear regulator
IXTN62N50L
IXTH12N100L
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DRV8402
Abstract: No abstract text available
Text: Not Recommended for New Designs DRV8402 SLES222 – FEBRUARY 2009 www.ti.com Dual Full Bridge PWM Motor Driver Check for Samples: DRV8402 FEATURES 1 • • • • • • • • • • High-Efficiency Power Stage up to 96% with Low RDS(on) MOSFETs (80 mΩ at TJ = 25°C)
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DRV8402
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NTD12N10
Abstract: IRF530 AND8199 HUF75631SK8 Bipolar Junction Transistor
Text: AND8199 Thermal Stability of MOSFETs Prepared by: Alan Ball ON Semiconductor Application Engineering Manager http://onsemi.com ID, DRAIN CURRENT A 24 the same application of the positive temperature coefficient applies. In this case, the thermal path between the cells is
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AND8199
AND8199/D
NTD12N10
IRF530
AND8199
HUF75631SK8
Bipolar Junction Transistor
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