em 329
Abstract: No abstract text available
Text: S EM ICOND UCTOR 500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators SURFACE MOUNT LL34 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units
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LL-34
LL-34
DB-100
em 329
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W2N marking
Abstract: power supply ps 3003
Text: T EM I C Semiconductors Document number MHS/SCC 021 Date Issue 23/12/1999 Rev C Rev C 1 /42 PROJECT SPACE GENERAL TITLE INTEGRATED CIRCUIT, SILICON MONOLITHIC CMOS 16 BITS ERROR DETECTION AND CORRECTION UNIT BASED ON TYPE 29C516 E Page 1 T EM I C Document number
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29C516
W2N marking
power supply ps 3003
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Untitled
Abstract: No abstract text available
Text: EM MICROELECTRONIC - MARIN SA EM4123 Read-only UHF RFID IC Description Features • Factory programmed 64 bit ID number • High data rate: Up to 256 kbit/s Frequency independent: Typically used at 869 MHz, 902 - 960 MHz versions 001 to 099 On-chip oscillator
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EM4123
4123-DS
19-Sep-12
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Untitled
Abstract: No abstract text available
Text: EM MICROELECTRONIC - MARIN SA EM4123 Read-only UHF RFID IC Description Features • Factory programmed 64 bit ID number • High data rate: Up to 256 kbit/s Frequency independent: Typically used at 869 MHz, 902 - 960 MHz versions 001 to 099 On-chip oscillator
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EM4123
4123-DS
19-Sep-12
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Untitled
Abstract: No abstract text available
Text: EM MICROELECTRONIC - MARIN SA EM4123 Read-only UHF RFID IC Description The chip is used in passive UHF read-only transponder applications. It is powered up by an RF beam transmitted by the reader, which is received and rectified to generate a supply voltage for the chip.
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EM4123
4123-DS
16-Dec-13
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Untitled
Abstract: No abstract text available
Text: W F^ M TR O N FM1808SFRAM Memory ^ Features • 256K Nonvolatile Ferroelectric RAM Organized as 32,768 words x 8 bits ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation - 150ns Read Access - 235ns Read/Write Cycle Time
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FM1808SFRAMÂ
150ns
235ns
FM1808S
7S55015
0G00544
28-Pin)
1808S
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K2358
Abstract: AK2358 112KHz AK2358A AUP2 Analog Voice scrambler
Text: ASAHI □ □ □ □ O □ KASEI [AK 235 8] Built-in voice filter for cordless telephone. MSK MODEM 2400bps , COMPANDOR, and scrambler circuit . Low / wide operation voltage range (1.9 V to 5.5V) Built-in COMPANDOR output transient response circuit and time constant circuit
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AK2358]
2400bps)
function994/10
ifl3b35
IAK2358:
AK2358
0050-E-08
K2358
112KHz
AK2358A
AUP2
Analog Voice scrambler
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Untitled
Abstract: No abstract text available
Text: CY7C1388 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Features • Single 3 3 ± 0.3V power supply • High speed — 20 ns • Low active power — 235 m W • Low standby power — 90 mW • 2.0V data retention — 100 iW • Ideal for low-voltage cache memory
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CY7C1388
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AIR FLOW DETECTOR
Abstract: temperature sensor lm 125 RETS135H 50 k thermo pot air flow detector sensor LM33S LM336 application note LM135H-MIL LM308 HEATER, to-92
Text: LM135/LM235/LM335, LM135A/LM235A/LM335A N a t i o n a l S e m i c o n d u c t o r LM 135/LM 235/LM335, LM 135A/LM235A/LM335A Precision Temperature Sensors G eneral Description The LM135 series are precision, easily-calibrated, integrat ed circuit temperature sensors. Operating as a 2-terminal
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LM135/LM235/LM335,
LM135A/LM235A/LM335A
LM135
TL/H/5698â
TL/H/5698-16
b501124
AIR FLOW DETECTOR
temperature sensor lm 125
RETS135H
50 k thermo pot
air flow detector sensor
LM33S
LM336 application note
LM135H-MIL
LM308
HEATER, to-92
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photo electric smoke DETECTOR CIRCUIT DIAGRAM
Abstract: CIRCUIT OF SMOKE ALARM WITH PHOTODIODE CS-235 CS-235DW18 CS-235N18 alarm system with constant current source synchronous detector reference voltage
Text: System Photoelectric Sm oke Detector D escription The CS-235 System Sm oke Detector is a photo electric type w ith a p ulsed infrared LED as the light source an d a silicon p hotodiode as the light detector. The CS-235 IC, along w ith passive external com po
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CS-235
18LPDIP
CS-235DW18
18LSO
CS-235N18
D003L3S
photo electric smoke DETECTOR CIRCUIT DIAGRAM
CIRCUIT OF SMOKE ALARM WITH PHOTODIODE
alarm system with constant current source
synchronous detector reference voltage
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microwave transistor 03
Abstract: sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor
Text: DISCRETE SEMICONDUCTORS PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 03 PHILIPS
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PPC5001T
OT447A
microwave transistor 03
sot447a
transistor marking code AL
PPC5001T
SC15
transistor 335
npn microwave power transistor
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MB98802
Abstract: MB98802RC
Text: 235348530123234800532348902389534853 CMOS 64K -B IT F U J IT S U EEPROM CARD MB98802RC F e b ru a ry 191 E d itio n 1 .0 CMOS 64K 65,536 -BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY CARD The M B98802 is a m em ory card w hich is composed o f one MBM28C64
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MB98802RC
B98802
MBM28C64
38-pin
11I1I1M
38-PAD
CRD-38P-M03)
MB98802
MB98802RC
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LAE4001R
Abstract: SC15 MGL069
Text: Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING-SOT100 • S elf-aligned process e ntirely ion im planted and gold sandw ich m etallization PIN • O ptim um tem perature profile • E xcellent perform ance and reliability.
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LAE4001R
PINNING-SOT100
MBC878
OT100.
LAE4001R
SC15
MGL069
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Untitled
Abstract: No abstract text available
Text: PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSD733 PACKAGE DIMENSIONS DESCRIPTION The QSD733 is a silicon photodarlington encapsulated in an infrared transparent, black TO-18 package. U - .190 4.83 ^1 .178(4.62) V .235 (5.97) .218(5.54) T 0.030(0.76) NOM
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QSD733
QSD733
QED523
ST2147
100il
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sft 243 ba
Abstract: MSM65511RS vibrator
Text: O K I Semiconductor M S M 65511_ High-Performance CMOS 8-Bit Single-Chip Microcontroller DESCRIPTION The MSM 65511 is a high perform ance 8-bit single chip m icrocontroller im plem enting large integra tion, high speed and low power consumption by O KI's n X -8 /5 0 CPU core. W ith a m inim um instruc
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65P512,
MSM65511
sft 243 ba
MSM65511RS
vibrator
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s3331
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors
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LXEE18300X
S3331
LXE18300X
350fll
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01D04
Abstract: 04D04 fmm4002eh 02D03 demultiplexer ic 02D02 04D01
Text: 1.2Gb/s G aAs_ Demultiplexer IC FMM4002EH FEATURES • • • • • • • • 1 ,2Gbit/s High Speed Operation 4:8, 4:16, 2:16 Mode Selection Built-in Synchronous C ircuit and M aster/Slave O peration Highly Reliable 68-pin Ceram ic Herm etic Package
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FMM4002EH
68-pin
16-bit
FCSI0199M200
01D04
04D04
02D03
demultiplexer ic
02D02
04D01
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Untitled
Abstract: No abstract text available
Text: [sö PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSD733 Th e Q S D 733 is a silicon photodarlington en capsulated in an infrared transparent, black T O -18 package. R E FER ENC E SURFACE FEA TU RES V .235 5.97 .218(5.54) OR A N G E STR IPE Steel lead fram es for im proved reliability in solder
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QSD733
ST2147
74bhflSl
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MC10131
Abstract: mc10h131 ecl10k Lpel ECL10KH 10131 motorola MC10H131J
Text: ECL 10KH High-Speed Em itter-Coupled Logic Fam ily MC10H131 Dual M aster-Slave Type D Flip-Flop Features/ Benefits Ordering Information • Propagation delay, 1 ns typical PART NUMBER PACKAGE TEMPERATURE MC10H131 J,N,NL 20 Com • Power dissipation, 235 mW typical
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MC10H131
10K-compatlble
MC10H131
MC10131
ecl10k
Lpel
ECL10KH
10131 motorola
MC10H131J
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2242B
Abstract: DXU working
Text: P A I R C H I I - D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm TMC2302A Image Manipulation Sequencer 40 M H z • A synchronous loading o f control param eters • R apid 25ns per pixel rotation, w arping, panning, and scaling o f im ages
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TMC2302A
2242B
DXU working
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BCV61 NPN general purpose double transistor Product specification Supersedes data of 1997 Jun 16 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose double transistor
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BCV61
BCV61
T143B
BCV62.
BCV61conductors
115002/00/03/pp8
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K9520-55
Abstract: k952
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’t r e n c h ’
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K9520-55
K9520-55
k952
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Untitled
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable tor surtace
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BUK9620-55
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3Kp Transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor
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BCV62
T143B
BCV61.
115002/00/03/pp8
3Kp Transistor
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