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    PARAMETER OF DIGITAL IC Search Results

    PARAMETER OF DIGITAL IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL540H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    PARAMETER OF DIGITAL IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TMS320C28xx

    Abstract: TMS320C28x ccs compiler intrinsics tms320c2000 tic28
    Text: Application Report SPRA806 - December 2001 An Easy Way of Creating a C-callable Assembly Function for the TMS320C28x DSP Todd Anderson Digital Signal Processing Solutions ABSTRACT C-callable assembly routines require an understanding of parameter-passing conventions


    Original     		PDF SPRA806 TMS320C28x TMS320C28xx ccs compiler intrinsics tms320c2000 tic28

    Untitled

    Abstract: No abstract text available
    Text: EMB3 / UMB3N / IMB3A PNP -100mA -50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter Tr1 and Tr2 VCEO -50V -100mA 4.7kW IC(MAX.) R1 EMT6 UMT6 (6) (1) (2) (5) (4) SMT6 (4) lFeatures of the input. They also have the advantage of


    Original     		PDF -100mA -100mA SC-107C) DTA143T R1120A

    Untitled

    Abstract: No abstract text available
    Text: EMH4 / UMH4N / IMH4A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 VCEO 50V 100mA 10kW IC(MAX.) R1 EMT6 (6) (1) (2) UMT6 (5) (4) SMT6 (4) lFeatures of the input. They also have the advantage of


    Original     		PDF 100mA 100mA SC-107C) DTC114T R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTC023J series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Builtin Transistors l Outline Parameter VCC Value 50V IC(MAX.) 100mA R1 R2 2.2kΩ 47kΩ l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of


    Original     		PDF DTC023J 100mA 100mA DTC023JM DTC023JEB SC-105AA) SC-89)

    UN1113

    Abstract: UNR1113 XN06113 XN6113
    Text: Composite Transistors XN06113 XN6113 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol


    Original     		PDF XN06113 XN6113) UN1113 UNR1113 XN06113 XN6113

    UN1116

    Abstract: UNR1116 XN06116 XN6116
    Text: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol


    Original     		PDF XN06116 XN6116) UN1116 UNR1116 XN06116 XN6116

    UN1213

    Abstract: UNR1213 XN06213 XN6213
    Text: Composite Transistors XN06213 XN6213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current 1 : Collector (Tr1)


    Original     		PDF XN06213 XN6213) UN1213 UNR1213 XN06213 XN6213

    UN1111

    Abstract: UNR1111 XN06111 XN6111
    Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol


    Original     		PDF XN06111 XN6111) UN1111 UNR1111 XN06111 XN6111

    Untitled

    Abstract: No abstract text available
    Text: DTA023Y series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 2.2kΩ 10kΩ l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of


    Original     		PDF DTA023Y -100mA -100mA DTA023YM DTA023YEB SC-105AA) SC-89)

    UN1212

    Abstract: UNR1212 XN06212 XN6212
    Text: Composite Transistors XN06212 XN6212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN06212 XN6212) UN1212 UNR1212 XN06212 XN6212

    UN1213

    Abstract: UNR1213 XN04213 XN4213
    Text: Composite Transistors XN04213 XN4213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage Rating of Collector to emitter voltage element Collector current +0.1 +0.1 0.4±0.2


    Original     		PDF XN04213 XN4213) UN1213 UNR1213 XN04213 XN4213

    XN4111

    Abstract: UN1111 UNR1111 XN04111
    Text: Composite Transistors XN04111 XN4111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current +0.1 +0.1 0.4±0.2


    Original     		PDF XN04111 XN4111) XN4111 UN1111 UNR1111 XN04111

    UN1215

    Abstract: UNR1215 XN06215 XN6215
    Text: Composite Transistors XN06215 XN6215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN06215 XN6215) UN1215 UNR1215 XN06215 XN6215

    UN1215

    Abstract: UNR1215 XN04215 XN4215
    Text: Composite Transistors XN04215 XN4215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN04215 XN4215) UN1215 UNR1215 XN04215 XN4215

    UN1114

    Abstract: UNR1114 XN06114 XN6114
    Text: Composite Transistors XN06114 XN6114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN06114 XN6114) UN1114 UNR1114 XN06114 XN6114

    UN1211

    Abstract: UNR1211 XN04211 XN4211
    Text: Composite Transistors XN04211 XN4211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current +0.1 +0.1 0.4±0.2


    Original     		PDF XN04211 XN4211) UN1211 UNR1211 XN04211 XN4211

    UN1214

    Abstract: UNR1214 XN06214 XN6214
    Text: Composite Transistors XN06214 XN6214 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN06214 XN6214) UN1214 UNR1214 XN06214 XN6214

    UN1112

    Abstract: UNR1112 XN06112 XN6112
    Text: Composite Transistors XN06112 XN6112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN06112 XN6112) UN1112 UNR1112 XN06112 XN6112

    UN1115

    Abstract: UNR1115 XN06115 XN6115
    Text: Composite Transistors XN06115 XN6115 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating of Collector to emitter voltage element Collector current


    Original     		PDF XN06115 XN6115) UN1115 UNR1115 XN06115 XN6115

    UN1216

    Abstract: UNR1216 XN06216 XN6216
    Text: Composite Transistors XN06216 XN6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN06216 XN6216) UN1216 UNR1216 XN06216 XN6216

    Untitled

    Abstract: No abstract text available
    Text: DTA023J series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 2.2kΩ 47kΩ l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of


    Original     		PDF DTA023J -100mA -100mA DTA023JM DTA023JEB SC-105AA) SC-89)

    UN1211

    Abstract: UNR1211 XN06211 XN6211
    Text: Composite Transistors XN06211 XN6211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN06211 XN6211) UN1211 UNR1211 XN06211 XN6211

    block diagram of digital TV

    Abstract: Tv BOX Diagram S020 SAA7157 SAA7157P SAA7157T philips 5b
    Text: Philips Components D ata sheet s tatu s Preliminary specification d a te of issue April 1991 FEATURES • PUL frequency m ultiplier SAA7157 Clock signal generation circuit SCGC for a digital TV system Q U IC K REFERENCE DATA SY M B O L PARAMETER digital supply voltage


    OCR Scan     		PDF SAA7157 SAA7157 SAA715X block diagram of digital TV Tv BOX Diagram S020 SAA7157P SAA7157T philips 5b

    Untitled

    Abstract: No abstract text available
    Text: Am7970 Compression/Expansion Processor CEP PRELIMINARY DISTINCTIVE CHARACTERISTICS • Compression/Expansion of digital two-tone image data using run-length and relative address coding - Two-Dimensional, Modified READ (MR and MMR) coding with programmable K-Parameter.


    OCR Scan     		PDF Am7970 16-Mbyte DAD17