5SDD 54N4000
Abstract: D150 Rectifier A150 B150 C150 D150 VF150 VF25
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V mΩ Ω 5SDD 54N4000 Doc. No. 5SYA1171-00 Dec. 03 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability
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54N4000
5SYA1171-00
CH-5600
5SDD 54N4000
D150 Rectifier
A150
B150
C150
D150
VF150
VF25
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PDF
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V 5SDD 54N4000 mW Doc. No. 5SYA1171-01 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability
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54N4000
5SYA1171-01
CH-5600
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i8042
Abstract: IAM-81028 IAM-81008 I8082 i40220 I40420 AN-S013 IAM-82008 I80220 I80820
Text: AB-0013: SPICE Models for the IAM- 81 and IAM-82 Active Mixers Revised February, 1999 Introduction The IAM81 and IAM82 mixers are offered in a number of packages. IAM-81000 and IAM-82000 are chip form; IAM-81008 and IAM-82008 are SO-8 plastic packaged versions, and IAM-81028 and IAM-82028
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AB-0013:
IAM-82
IAM81
IAM82
IAM-81000
IAM-82000
IAM-81008
IAM-82008
IAM-81028
IAM-82028
i8042
I8082
i40220
I40420
AN-S013
I80220
I80820
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PDF
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1337GDVGI
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 Errata Notification EN #: UEN-12-13 Issue Date: November 7, 2012 Product Affected: Contact: E-mail: Errata Revision #: N/A Effective Date: November 7, 2012
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UEN-12-13
16-SOIC,
16-QFN.
UEN-12-13
1337AGCSRGI
1337AGCSRGI8
1337GDVGI
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PDF
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Untitled
Abstract: No abstract text available
Text: DC-DC Converter Module VE-820005B Mini – 300 Vin / 28 Vout / 200 Watts Features • • • • • • • • • • • • DC input range: 180 - 450 V Input surge withstand: 525 V for 100 ms DC output: 28 V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load
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VE-820005B
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of 4-pin DIP switch
Abstract: CNY64
Text: 4 PIN DIP VERY HIGH ISOLATION VOLTAGE PHOTOCOUPLER CNY64 series CNY65 series Features • High Voltage BVCEO=80V min. • Operating temperature up to +85°C • High isolation voltage between input and output Viso = 8200 Vrms • Rated recurring peak voltage (repetitive)
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0303/IEC
E214129)
CNY64
CNY65
CNY64
CNY65
NoDPC-0000041
of 4-pin DIP switch
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PDF
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T3441N
Abstract: No abstract text available
Text: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T3441N Key Parameters enndaten VDRM / VRRM 4800V … 5200V ITAVM 3200A TC=85°C ITSM vT0 82000A 3570A (TC=55°C) 0,764V rT 0,234mΩ RthJC 4,5K/kW Clamping Force 63 … 91kN
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T3441N
2000A
100mm
50/60Hz
50/60Hz
T3441N
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T2851N Key Parameters enndaten VDRM / VRRM 4800V … 5200V ITAVM 2980A TC=85°C ITSM vT0 82000A 3570A (TC=55°C) 0,765V rT 0,234mΩ RthJC 5,0K/kW Clamping Force 63 … 91kN
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T2851N
2000A
100mm
50/60Hz
50/60Hz
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BXL4004
Abstract: No abstract text available
Text: BXL4004 Ordering number : EN9050A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BXL4004 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=3mΩ (typ.) 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications
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EN9050A
BXL4004
8200pF
PW10s,
BXL4004
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PDF
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Untitled
Abstract: No abstract text available
Text: BXL4004 Ordering number : EN9050A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BXL4004 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=3mΩ (typ.) 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications
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BXL4004
EN9050A
8200pF
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PDF
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XL4004
Abstract: XL400
Text: BXL4004 Ordering number : EN9050 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BXL4004 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=3mΩ (typ.) 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications
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EN9050
BXL4004
8200pF
PW10s,
XL4004
XL400
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PDF
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LWQ38E
Abstract: LW Q38E
Text: 2012-09-26 CHIPLED 0603 Datasheet Version 1.0 LW Q38E Features: Besondere Merkmale: • Package: SMT package 0603, colored diffused resin • Viewing angle at 50 % IV: 150° horizontal ; 130° (vertical) • Color: Cx = 0.30, Cy = 0.28 acc. to CIE 1931 (white); CRI (typ.) = 80; CTR = 8200 K
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JESD22-A114-F
D-93055
LWQ38E
LW Q38E
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PDF
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Q65110A7209
Abstract: No abstract text available
Text: 2012-09-26 CHIPLED 0603 Datasheet Version 1.0 Features: Besondere Merkmale: • Package: SMT package 0603, colored diffused resin • Viewing angle at 50 % IV: 150° horizontal ; 130° (vertical) • Color: Cx = 0.30, Cy = 0.28 acc. to CIE 1931 (white); CRI (typ.) = 80; CTR = 8200 K
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JESD22-A114-F
D-93055
Q65110A7209
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PDF
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AN005
Abstract: F010 F018 registered buffer parity
Text: Using ECC Memory Configuration and Error Injection and Detection with the Tsi107 80C2000_AN005_03 November 3, 2009 6024 Silver Creek Valley Road San Jose, California 95138 Telephone: 408 284-8200 • FAX: (408) 284-3572 Printed in U.S.A. 2009 Integrated Device Technology, Inc.
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Tsi107
80C2000
Tsi107
AN005
F010
F018
registered buffer parity
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DDR2 Unbuffered SO-DIMM Reference Design
Abstract: DDR2 layout guidelines TSI110 JESD22-A104B JESD22-A118 JESD22 REQ64 DDR2 sdram pcb layout guidelines DDR2 sodimm pcb layout
Text: Tsi110 Hardware Manual 80E5000_MA002_04 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER
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Tsi110TM
80E5000
DDR2 Unbuffered SO-DIMM Reference Design
DDR2 layout guidelines
TSI110
JESD22-A104B
JESD22-A118
JESD22
REQ64
DDR2 sdram pcb layout guidelines
DDR2 sodimm pcb layout
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Tsi107D-100JE
Abstract: Tsi107C-100JE Tsi107D-100JEY pic 636 Tsi107 XPC107APX100LD 18ARS10534D001 Tsi107D-133LEY IDT TOP SIDE 640 PBGA package marking G38-87
Text: Tsi107 Hardware Manual 80C2000_MA002_07 November 3, 2009 6024 Silver Creek Valley Road San Jose, California 95138 Telephone: 408 284-8200 • FAX: (408) 284-3572 Printed in U.S.A. 2009 Integrated Device Technology, Inc. Titlepage GENERAL DISCLAIMER
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Tsi107
80C2000
Tsi107#
18ARS10534D001
Tsi107
Tsi107D-100JE
Tsi107C-100JE
Tsi107D-100JEY
pic 636
XPC107APX100LD
18ARS10534D001
Tsi107D-133LEY
IDT TOP SIDE 640 PBGA package marking
G38-87
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PDF
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winpath
Abstract: Wintegra wintegra winpath AN005 M66EN REQ64 WinPATH 4
Text: Interfacing the PowerSpan IITM with the Wintegra WinpathTM 80A1010_AN005_05 November 4, 2009 6024 Silver Creek Valley Road San Jose, California 95138 Telephone: 408 284-8200 • FAX: (408) 284-3572 Printed in U.S.A. 2009 Integrated Device Technology, Inc.
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80A1010
winpath
Wintegra
wintegra winpath
AN005
M66EN
REQ64
WinPATH 4
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PDF
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DM 0565
Abstract: transistor a6f
Text: IC41C82002 IC41LV82002 2M x 8 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE FEATURES DESCRIPTION Extended Data-Out (EDO) Page Mode access cycle TTL compatible inputs and outputs Refresh Interval: - 2,048 cycles/32 ms The 1+51 82002 Series is a 2,097,152 x 8-bit high-performance
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IC41C82002
IC41LV82002
16-MBIT)
cycles/32
300mil
400mil
DM 0565
transistor a6f
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PDF
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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lenze d-31855 manual
Abstract: lenze EMZ8201BB manual LENZE 9300 drive manual lenze inverter manual EVF8201-E lenze inverter manual EVF8202-E LENZE 8200 vector parameters lenze EVF8202-E manual LENZE 8200 parameter list emz8201bb D-31855
Text: 490 826 Lenze Global Drive Frequency inverters 8200/9300 vector 0.37 … 90 kW Lenze Drive Systems GmbH, Postfach 10 13 52, D-31763 Hameln Site: Hans-Lenze-Straße 1, D-31855 Aerzen, Tel. +49 0 5154 82-0, Fax +49 (0) 5154 82-21 11 E-mail: Lenze@Lenze.de • Internet: http://www.Lenze.com
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D-31763
D-31855
lenze d-31855 manual
lenze EMZ8201BB manual
LENZE 9300 drive manual
lenze inverter manual EVF8201-E
lenze inverter manual EVF8202-E
LENZE 8200 vector parameters
lenze EVF8202-E manual
LENZE 8200 parameter list
emz8201bb
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PDF
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MT5634ZBA
Abstract: SB2400 4 digit duplex disply transistor t18 FET UPS APC 800 CIRCUIT fci dh 22 12 FMR 140 DSP BASED ONLINE UPS design TO 521 MH apc 1400 hyperterminal disable beep
Text: SocketModem MT5634SMI V.34 & V.92 AT Commands Fax Class 1 Commands Fax Class 2 Commands Voice Commands Reference Guide Copyright and Technical Support SocketModem Reference Guide Serial: MT5634SMI-34, MT5634SMI-92 Parallel: MT5634SMI-P-92 Medical Device: MT5634SMI-HV-92, MT5634SMI-P-HV-92
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MT5634SMI
MT5634SMI-34,
MT5634SMI-92
MT5634SMI-P-92
MT5634SMI-HV-92,
MT5634SMI-P-HV-92
MT5634SMI-ITP-92,
MT5634SMI-P-ITP-92
S000263C,
MT5634SMIxx
MT5634ZBA
SB2400
4 digit duplex disply
transistor t18 FET
UPS APC 800 CIRCUIT
fci dh 22
12 FMR 140
DSP BASED ONLINE UPS design
TO 521 MH
apc 1400 hyperterminal disable beep
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PDF
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ch 8500
Abstract: ABB 5STP 12 press pack thyristor 8000 VDRM press pack thyristor 9000 VDRM ABB thyristor 5 5SYA2020
Text: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 8000 8500 1200 1880 35x103 1.25 0.48 V V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Nov. 04 • Patented free-floating silicon technology • Low on-state and switching losses
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12N8500
5SYA1044-02
12N8500
12N8200
12N7800
5SYA2020
5SYA2034
CH-5600
ch 8500
ABB 5STP 12
press pack thyristor 8000 VDRM
press pack thyristor 9000 VDRM
ABB thyristor 5
5SYA2020
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PDF
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parameter values 8200
Abstract: No abstract text available
Text: SIEMENS 6-Bit A/D Converter, 300 MHz SDA 8200 Bipolar 1C Features • • • • • • • • • 300 MHz strobe frequency 5.4 effective bits /anaiog = 100 MHz ± 0.25 LSB max. linearity error ± 1 V input voltage range 12 pF input capacitance Optionally 2:1 demultiplexed output data
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OCR Scan
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Q67000-A8164
C-DIP-40
parameter values 8200
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PDF
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Untitled
Abstract: No abstract text available
Text: 47E » SIEMENS • Ô B 3 5 b 0 5 QQBMTMfi b ■ SIEG S I E M EN S A K T I E N G E S E L L S C H A F T 6-Bit A/D Converter, 300 MHz SDA 8200 Bipolar 1C Features • • • • • • • • • ^ t - io - c a 300 MHz strobe frequency 5.4 effective bits fanaiog = 100 MHz
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Q67000-A8164
C-DIP-40
fi23SbDS
fl23SbOS
SDA8200
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PDF
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