Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS PARAMETERS RATED INPUT POWER MAX INPUT POWER IMPEDANCE OUTPUT SPL @ 1W/1M AT 0.8, 1.0, 1.2, 1.5 kHz DISTORTION (MAX.) RESONANT FREQUENCY FREQUENCY RANGE HOUSING MATERIAL CONE MATERIAL MAGNET MATERIAL OPERATING TEMPERATURE WEIGHT VALUES UNITS
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2002/95/EC
AS07108PO-R.
AS07108PO-WR-R
AS07108PO-WR-R
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ul1571
Abstract: IP57 ul1571 AWG Omni Electronics 665-POW1644LLWC50BR 51021-0200
Text: SPECIFICATIONS PARAMETERS DIRECTIVITY SENSITIVTY STANDARD OPERATING VOLTAGE MAX OPERATING VOLTAGE CURRENT CONSUMPTION MAX IMPEDANCE SIGNAL TO NOISE RATIO (MIN.) OPERATING TEMPERATURE TERMINAL INTERNAL CAPACITOR VALUES UNITS OMNI -44 ± 3 2 10 0.5 2.2 60
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2002/95/EC
POW-1644L-LWC50-B-R
POW-1644L-LWC50-B-R
665-POW1644LLWC50BR
ul1571
IP57
ul1571 AWG
Omni Electronics
51021-0200
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15514
Abstract: No abstract text available
Text: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiB410DK
AN609,
8029u
6830m
5384m
0019m
0110u
9058u
5505u
15514
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0066E
Abstract: 014e1
Text: NONLINEAR MODEL NE68518 SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 Parameter time capacitance inductance resistance
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NE68518
7e-16
9e-13
4e-12
18e-12
2e-12
NE68518
13e-12
14e-12
0066E
014e1
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Untitled
Abstract: No abstract text available
Text: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1
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NE68808
8e-16
8e-15
5e-16
8e-12
55e-12
11e-12
5e-14
29e-12
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Untitled
Abstract: No abstract text available
Text: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFZ44S
IRFZ44L
SiHFZ44S
SiHFZ44LL
AN609,
THERMAZ44S
9021m
9076m
0860m
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Untitled
Abstract: No abstract text available
Text: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP21N60L
SiHFP21N60L
AN609,
07-Jun-10
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Untitled
Abstract: No abstract text available
Text: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFIBC40G
SiHFIBC40G
AN609,
31-May-10
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60E-12
Abstract: NE68719 40E15
Text: NONLINEAR MODEL SCHEMATIC NE68719 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 8.0e-17 MJC 0.53 BF 128 XCJC 0.27 NF 1.0 CJS 0.75 VAF 17 VJS IKF 0.18 MJS ISE 3.3e-15 FC 0.37
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NE68719
0e-17
3e-15
0e-15
415e-12
102e-12
0e-12
26e-12
19e-1es
60E-12
NE68719
40E15
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si5429
Abstract: No abstract text available
Text: Si5429DU_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Si5429DU
AN609,
5457m
6672m
2405m
2799m
3397m
0804m
0570u
4741u
si5429
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si2366
Abstract: No abstract text available
Text: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si2366DS
AN609,
J2523
4374u
1469m
9180m
0805u
5327u
7530m
0215u
si2366
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diode fr 307
Abstract: 5SDF0131Z0400 ABB 12 30 01 ABB 14 11 09 DC-20000
Text: PRELIMINARY 5SDF 0131Z0400 5SDF 0131Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications Welding equipment High current application up to 10 kHz Key Parameters
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0131Z0400
1768/138a,
DS/307/12b
Jun-12
Jun-12
diode fr 307
5SDF0131Z0400
ABB 12 30 01
ABB 14 11 09
DC-20000
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NE68118
Abstract: No abstract text available
Text: NONLINEAR MODEL SCHEMATIC NE68118 Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LC LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185 XCJC NF 1.02 CJS VAF 15 VJS 0.75 IKF 0.055 MJS ISE 1.77e-11
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NE68118
7e-16
77e-11
2e-12
8e-12
14e-12
07e-12
01e-12
16NAL
NE68118
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Untitled
Abstract: No abstract text available
Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS BF 7e-16 MJC 0.34 109 XCJC NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 0.01 VAR 12.4 ITF IKR Infinity PTF
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UPA826TC
7e-16
9e-13
4e-12
18e-12
3e-12
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Untitled
Abstract: No abstract text available
Text: NONLINEAR MODEL UPA844TC BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 8e-17 3.7e-17 MJC 0.53 0.18 BF 128 81 XCJC 1 0.5 NF 1 0.9944 CJS VAF 17 27.7 VJS 0.75 0.75 IKF 0.18 0.98 MJS ISE 3.3e-15 2.53e-10 FC 0.37 0.5 5e-12 NE 1.48 30 TF
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UPA844TC
8e-17
3e-15
4e-15
415e-12
102e-12
7e-17
53e-10
35e-15
49e-12
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Untitled
Abstract: No abstract text available
Text: IRLR024_RC, IRLU024_RC, SiHLR024_RC, SiHLU024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRLR024
IRLU024
SiHLR024
SiHLU024
AN609,
9731m
2316m
0467m
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Untitled
Abstract: No abstract text available
Text: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si4202DY
AN609,
2175m
2923m
2439m
3089u
1542m
7069m
8017m
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Untitled
Abstract: No abstract text available
Text: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFZ48R
SiHFZ48R
AN609,
6055m
9011m
2958m
1718m
3035m
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14093
Abstract: 75431
Text: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si9945BDY
AN609,
3203u
3659m
8029m
3567u
2443m
3998m
0795m
14093
75431
|
Untitled
Abstract: No abstract text available
Text: y U IM IT R O D E UC161A UC161B UC161C • Direct CMOS Logic Compatibility • Low Power • Direct Wire-OR of Outputs The UC161 family of quad comparators feature programmable DC and AC parameters. A single external resistor can set the comparators to operate in the microwatt region for battery applications, or higher cur
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UC161A
UC161B
UC161C
UC161
100mVp
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SN62088
Abstract: No abstract text available
Text: LINEAR INTEGRATED TYPES SN62Q88. SN72Q88 CHOPPER-STABILIZED OPERATIONAL AMPLIFIERS CIRCUITS B U L L E T I N N O . D L -S 7 3 1 2 0 5 1 , S E P T E M B E R 1 973 Very Low Input Offset Parameters High Slew Rates Very Low Input Bias Currents High Gain-Bandwidth Product
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OCR Scan
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SN62Q88.
SN72Q88
SN62088
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TL2829Z
Abstract: 31AY
Text: TL2829Z, TL2829Y HIGH-TEMPERATURE QUADRUPLE OPERATIONAL AMPLIFIERS SLOSQ67A - APRIL 1991 - REVISED MARCH 1993 Free-Air Operating Temperature Range -40°C to 150°C Low Input Bias and Offset Parameters at 25°C input Offset Voltage . . . 3 mV Typ Input Offset Current. . . 2 nA Typ
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OCR Scan
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TL2829Z,
TL2829Y
SLOSQ67A
TL2829Z
31AY
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Untitled
Abstract: No abstract text available
Text: Back to FETs 0 /V E F ^ IP NES 130/59 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS
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NES130/59
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DS4191
Abstract: No abstract text available
Text: DS2012SF MITEL @ Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4191 - 2.3 DS4191 - 2.4 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998 KEY PARAMETERS VRRM 6000V I F a v ,
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DS2012SF
DS4191
6500A
DS2012SF60
DS2012SF59
DS2012SF58
DS2012SF57
DS2012SF56
DS2012SF55
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